VS-10TTS08PbF Series
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 10 A
FEATURES
2
(A)
• Designed
and
JEDEC-JESD47
qualified
according
to
• Compliant to RoHS Directive 2002/95/EC
1 (K) (G) 3
APPLICATIONS
• Typical applications are in input rectification and crow-bar
(soft start) and these products are designed to be used
with Vishay HPP input diodes, switches and output
rectifiers which are available in identical package outlines.
TO-220AB
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
TO-220AB
Single SCR
6.5 A
800 V
1.15 V
15 mA
- 40 °C to 125 °C
DESCRIPTION
The VS-10TTS08PbF high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C,
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
13.5
THREE-PHASE BRIDGE
17
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
Range
6.5 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
6.5
10
800
140
1.15
150
100
- 40 to 125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-10TTS08PbF
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
I
RRM
/I
DRM
AT 125 °C
mA
1.0
Revision: 23-Aug-11
Document Number: 94572
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10TTS08PbF Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
TEST CONDITIONS
T
C
= 112 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied, T
J
= 125 °C
10 ms sine pulse, no voltage reapplied, T
J
= 125 °C
10 ms sine pulse, rated V
RRM
applied, T
J
= 125 °C
10 ms sine pulse, no voltage reapplied, T
J
= 125 °C
t = 0.1 ms to 10 ms, no voltage reapplied, T
J
= 125 °C
6.5 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
RRM
/V
DRM
VALUES
6.5
10
120
140
72
100
1000
1.15
17.3
0.85
0.05
1.0
30
50
150
100
V/μs
A/μs
mA
A
2
s
A
2
s
V
m
V
A
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage
current
Typical holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
Anode supply = 6 V, resistive load, initial I
T
= 1 A
Anode supply = 6 V, resistive load
T
J
= 25 °C
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to trigger
SYMBOL
P
GM
P
G(AV)
+I
GM
-V
GM
Anode supply = 6 V, resistive load, T
J
= - 65 °C
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
Anode supply = 6 V, resistive load, T
J
= - 65 °C
V
GT
V
GD
I
GD
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
T
J
= 125 °C, V
DRM
= Rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
20
15
10
1.2
1
0.7
0.2
0.1
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.8
3
100
μs
UNITS
Revision: 23-Aug-11
Document Number: 94572
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10TTS08PbF Series
www.vishay.com
Vishay Semiconductors
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
- 40 to 125
1.5
62
0.5
2
0.07
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-220AB
6 (5)
12 (10)
10TTS08
Maximum Allowable Case T
emperature (°C)
10T S
T 08
R
thJC
(DC) = 1.5 K/ W
120
Conduction Angle
Maximum Average On-state Power Loss (W)
125
8
7
6
5
4
3
Conduction Angle
180°
120°
90°
60°
30°
R Limit
MS
115
30°
60°
110
90°
120°
180°
105
0
1
2
3
4
5
6
7
Average On-state Current (A)
2
1
0
0
1
2
3
4
5
6
7
Average On-state Current (A)
10T S
T 08
T
J
= 125°C
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Maximum Allowable Case T
emperature (°C)
10T S
T 08
R
thJC
(DC) = 1.5 K/ W
Maximum Average On-state Power Loss (W)
125
12
10
8
6
R Limit
MS
4
2
0
0
2
4
6
8
10
12
Average On-state Current (A)
Conduc tion Period
120
Conduction Period
DC
180°
120°
90°
60°
30°
115
30°
60°
110
90°
120°
180° DC
105
0
2
4
6
8
10
12
Average On-state Current (A)
10T S
T 08
T
J
= 125°C
Fig. 2 - Current Rating Characteristic
Fig. 4 - On-State Power Loss Characteristics
Revision: 23-Aug-11
Document Number: 94572
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10TTS08PbF Series
www.vishay.com
Vishay Semiconductors
ine
Peak Half S Wave On-state Current (A)
150
140
130
120
110
100
90
80
70
60
50
0.01
10T S
T 08
Peak Half S Wave On-state Current (A)
ine
130
120
110
100
90
80
70
60
1
At Any R
ated Load Condition And With
R
ated V
RRM
Applied Following S
urge.
Initial T
J
= 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Maximum Non R
epetitive S
urge Current
Versus Pulse T
rain Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125°C
No Voltage R
eapplied
R
ated V
RRM
R
eapplied
10T S
T 08
10
100
0.1
Puls T
e rain Duration (s
)
1
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Instantaneous On-state Current (A)
10T S
T 08
100
10
T
J
= 25°C
T
J
= 125°C
1
0.5
1
1.5
2
2.5
3
3.5
Insta ntaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
T
ransient T
hermal Impedance Z
thJC
(°C/W)
10
S
teady S
tate Value
(DC Operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
S
ingle Pulse
10TT
S08
0.01
0.0001
0.1
0.001
0.01
S
quare Wave Pulse Duration (s)
0.1
1
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 23-Aug-11
Document Number: 94572
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10TTS08PbF Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
10
T
T
S
08
PbF
1
1
2
3
4
5
6
7
-
-
-
-
-
2
3
4
5
6
7
Vishay Semiconductors product
Current rating
Circuit configuration:
T =
Single
thyristor
Package:
T = TO-220AB
Type of
silicon:
S
= Converter grade
-
-
Voltage code x 100 = V
RRM
None =
Standard
production
PbF = Lead (Pb)-free and RoHS compliant
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95222
www.vishay.com/doc?95225
Revision: 23-Aug-11
Document Number: 94572
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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