VS-10TTS08-M3
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 10 A
FEATURES
2
(A)
• Designed
and
®
-JESD 47
JEDEC
qualified
according
to
• 125 °C max. operating junction temperature
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
please see
1 (K) (G) 3
3L
TO-220AB
APPLICATIONS
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
6.5 A
800 V
1.15 V
15 mA
-40 °C to 125 °C
3L TO-220AB
Single SCR
• Typical usage is in input rectification crowbar (soft star)
and AC switch in motor control, UPS, welding, and battery
charge
DESCRIPTION
The VS-10TTS08... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter
T
A
= 55 °C, T
J
= 125 °C,
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
13.5
THREE-PHASE BRIDGE
17
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
Range
6.5 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
6.5
10
800
110
1.15
150
100
-40 to +125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-10TTS08-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
I
RRM
/I
DRM
AT 125 °C
mA
1.0
Revision: 21-Aug-17
Document Number: 96285
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10TTS08-M3
www.vishay.com
Vishay Semiconductors
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
TEST CONDITIONS
T
C
= 112 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied, T
J
= 125 °C
10 ms sine pulse, no voltage reapplied, T
J
= 125 °C
10 ms sine pulse, rated V
RRM
applied, T
J
= 125 °C
10 ms sine pulse, no voltage reapplied, T
J
= 125 °C
t = 0.1 ms to 10 ms, no voltage reapplied, T
J
= 125 °C
6.5 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
RRM
/V
DRM
VALUES
6.5
10
95
110
45
64
640
1.15
17.3
0.85
0.05
1.0
30
50
150
100
V/μs
A/μs
mA
A
2
s
A
2
s
V
m
V
A
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage
current
Typical holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
Anode supply = 6 V, resistive load, initial I
T
= 1 A,
T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 25 °C
T
J
= T
J
max., linear to 80 %, V
DRM
= R
g
- k = Open
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
+I
GM
-V
GM
Anode supply = 6 V, resistive load, T
J
= - 65 °C
Maximum required DC gate current to trigger
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
Anode supply = 6 V, resistive load, T
J
= - 65 °C
V
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
V
GD
I
GD
T
J
= 125 °C, V
DRM
= Rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
20
15
10
1.2
1
0.7
0.2
0.1
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.8
3
100
μs
UNITS
Revision: 21-Aug-17
Document Number: 96285
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10TTS08-M3
www.vishay.com
Vishay Semiconductors
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +125
1.5
62
0.5
2
0.07
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style 3L TO-220AB
Mounting torque
Marking device
6 (5)
12 (10)
10TTS08
Maximum Allowable Case Temperature (°C)
Maximum Average On-State Power Loss (W)
125
R
thJC
(DC) = 1.5 K/W
120
Conduction Angle
115
30°
60°
110
90°
120°
180°
105
0
1
2
3
4
5
6
7
8
7
6
5
4
3
2
T
J
= 125 °C
1
0
0
1
2
3
4
5
6
7
RMS Limit
180°
120°
90°
60°
30°
Conduction Angle
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
125
R
thJC
(DC) = 1.5 K/W
120
Conduction Period
115
30°
60°
110
90°
120°
180°
105
0
2
4
6
8
10
12
DC
Maximum Average On-State Power Loss (W)
12
10
8
6
RMS Limit
4
2
0
0
2
4
6
8
10
12
Conduction Period
T
J
= 125 °C
DC
180°
120°
90°
60°
30°
Average On-State Current (A)
Fig. 2 - Current Rating Characteristic
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 21-Aug-17
Document Number: 96285
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10TTS08-M3
www.vishay.com
Vishay Semiconductors
Peak Half
Sine
Wave Forward Current (A)
120
110
100
90
80
70
60
50
40
0.01
Maximum non-repetitive
surge
current
vs. pulse train duration.
Initial T
J
= T
J
max.
No voltage reapplied
Rated V
rrm
reapplied
Peak Half
Sine
Wave Forward Current (A)
110
100
90
80
70
60
50
40
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
At any rated load condition and with
rated V
rrm
applied following
surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
0.1
1
10
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
Instantaneous On-State Current (A)
1000
100
10
T
J
= 25 °C
T
J
= 125 °C
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Z
thJC
- Transient Thermal Impedance (°C/W)
10
Steady state
value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single
pulse
0.1
0.01
0.0001
0.001
0.01
0.1
1
Square
Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 21-Aug-17
Document Number: 96285
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10TTS08-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
10
T
T
S
08
-M3
1
1
2
3
4
5
6
7
-
-
-
-
-
2
3
4
5
6
7
Vishay Semiconductors product
Current rating
Circuit configuration:
T =
single
thyristor
Package:
T = TO-220AB
Type of
silicon:
S
= converter grade
-
-
Voltage code x 100 = V
RRM
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-10TTS08-M3
QUANTITY PER T/R
50
MINIMUM ORDER QUANTITY
1000
PACKAGING DESCRIPTION
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?96154
www.vishay.com/doc?95028
Revision: 21-Aug-17
Document Number: 96285
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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