Standard SRAM, 8KX8, 70ns, CMOS, CDIP28, 0.600 INCH, CERDIP-28
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | DIP |
| 包装说明 | 0.600 INCH, CERDIP-28 |
| 针数 | 28 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 70 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-GDIP-T28 |
| JESD-609代码 | e0 |
| 长度 | 37.211 mm |
| 内存密度 | 65536 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 28 |
| 字数 | 8192 words |
| 字数代码 | 8000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 8KX8 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装等效代码 | DIP28,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 225 |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B |
| 座面最大高度 | 5.08 mm |
| 最大待机电流 | 0.0008 A |
| 最小待机电流 | 2 V |
| 最大压摆率 | 0.09 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) - hot dipped |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 20 |
| 宽度 | 15.24 mm |
| Base Number Matches | 1 |
| 5962-8552511XA | 5962-8552507XA | 5962-8552509XA | 7164S35TPG | 5962-8552510XA | 5962-8552508XA | IDT7164L25TPG | 7164L35Y | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 8KX8, 70ns, CMOS, CDIP28, 0.600 INCH, CERDIP-28 | Standard SRAM, 8KX8, 35ns, CMOS, CDIP28, 0.600 INCH, CERDIP-28 | Standard SRAM, 8KX8, 45ns, CMOS, CDIP28, 0.600 INCH, CERDIP-28 | Standard SRAM, 8KX8, 35ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 | Standard SRAM, 8KX8, 55ns, CMOS, CDIP28, 0.600 INCH, CERDIP-28 | Standard SRAM, 8KX8, 35ns, CMOS, CDIP28, 0.600 INCH, CERDIP-28 | Standard SRAM, 8KX8, 25ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 | Standard SRAM, 8KX8, 35ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 符合 | 不符合 | 不符合 | 符合 | 不符合 |
| 零件包装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | SOJ |
| 包装说明 | 0.600 INCH, CERDIP-28 | 0.600 INCH, CERDIP-28 | 0.600 INCH, CERDIP-28 | 0.300 INCH, PLASTIC, DIP-28 | 0.600 INCH, CERDIP-28 | 0.600 INCH, CERDIP-28 | DIP, DIP28,.3 | 0.300 INCH, SOJ-28 |
| 针数 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| Reach Compliance Code | not_compliant | _compli | not_compliant | unknown | not_compliant | not_compliant | compliant | not_compliant |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | EAR99 | 3A001.A.2.C | 3A001.A.2.C | EAR99 | EAR99 |
| 最长访问时间 | 70 ns | 35 ns | 45 ns | 35 ns | 55 ns | 35 ns | 25 ns | 35 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-PDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-PDIP-T28 | R-PDSO-J28 |
| JESD-609代码 | e0 | e0 | e0 | e3 | e0 | e0 | e3 | e0 |
| 长度 | 37.211 mm | 37.211 mm | 37.211 mm | 34.67 mm | 37.211 mm | 37.211 mm | 34.67 mm | 17.9324 mm |
| 内存密度 | 65536 bit | 65536 bi | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| 字数 | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
| 字数代码 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 70 °C | 125 °C | 125 °C | 70 °C | 70 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | - | -55 °C | -55 °C | - | - |
| 组织 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | SOJ |
| 封装等效代码 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.3 | DIP28,.6 | DIP28,.6 | DIP28,.3 | SOJ28,.34 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | SMALL OUTLINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 225 | 225 | NOT SPECIFIED | 260 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 225 |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 5.08 mm | 5.08 mm | 5.08 mm | 4.57 mm | 5.08 mm | 5.08 mm | 4.57 mm | 3.556 mm |
| 最大待机电流 | 0.0008 A | 0.02 A | 0.0008 A | 0.015 A | 0.0008 A | 0.0002 A | 0.00006 A | 0.00006 A |
| 最大压摆率 | 0.09 mA | 0.16 mA | 0.13 mA | 0.15 mA | 0.125 mA | 0.14 mA | 0.15 mA | 0.13 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | COMMERCIAL | MILITARY | MILITARY | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) - hot dipped | Tin/Lead (Sn/Pb) - hot dipped | Tin/Lead (Sn/Pb) - hot dipped | Matte Tin (Sn) - annealed | Tin/Lead (Sn/Pb) - hot dipped | Tin/Lead (Sn/Pb) - hot dipped | Matte Tin (Sn) - annealed | Tin/Lead (Sn85Pb15) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | J BEND |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 20 | 20 | NOT SPECIFIED | 30 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 30 |
| 宽度 | 15.24 mm | 15.24 mm | 15.24 mm | 7.62 mm | 15.24 mm | 15.24 mm | 7.62 mm | 7.5184 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | - | 含铅 | 含铅 | 不含铅 | - |
| 厂商名称 | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 端口数量 | 1 | 1 | 1 | - | 1 | 1 | 1 | - |
| 可输出 | YES | YES | YES | - | YES | YES | YES | - |
| 筛选级别 | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | - | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | - | - |
| 最小待机电流 | 2 V | - | 2 V | 4.5 V | 2 V | 2 V | 2 V | 2 V |
聊聊、笑笑、闹闹
能源基础设施
工作这点儿事
下载中心专版
MicroPython开源版块
微控制器 MCU
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
