20 W HMIC Silicon PIN Diode Terminated SPDT Switch
8.0 - 10.5 GHz
Features
Low Insertion Loss
High Isolation
Low Parasitic Capacitance and Inductance
Fully Monolithic Die, Integrated Bias Network
Glass Encapsulated Construction
Greater than 20 W CW Power Handling @ +85°C
Silicon Nitride Passivation
Polymer Scratch Protection
RoHS* Compliant
Rev. V2
Functional Diagram
B3
J1
B2
C
L
L
C
J3
C
SW2
C
C
SW1
J2
C
Rterm1
(50 Ω)
Description
The MASW-010647 is a monolithic, terminated Silicon
PIN diode SPDT switch designed for X-Band high
power, high performance applications. The switch
handles greater than 20 W of CW power over the
8.0 - 10.5 GHz frequency band.
The device is fabricated using MACOM’s patented
HMIC process, which allows for the integration of
silicon pedestals that embed series and shunt diodes in
low loss, low dispersion glass. The switch offers low
insertion loss of 0.8 dB as well as high isolation
performance of 37 dB. The device integrates a bias
network to allow for simplified bias application and
switch control.
The topside is fully encapsulated with silicon nitride
passivation and an additional polymer layer for scratch
and impact protection. These protective coatings
prevent damage to the semiconductor junctions and
metal air bridges during handling and assembly.
Rterm2
(50 Ω)
Pin Configuration
2
Pin
J1
J2
J3
B2
B3
Function
RF
COMMON
RF
OUT
RF
OUT
Bias of J2
Bias of J3
2. The exposed metallization on the chip bottom must be
connected to RF, DC and thermal ground.
Ordering Information
1
Part Number
MASW-010647-13950G
MASW-010647-13950W
1. Die quantity varies.
Package
Die in Gel Pack
Die in Waffle Pack
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-010647
20 W HMIC Silicon PIN Diode Terminated SPDT Switch
8.0 - 10.5 GHz
Rev. V2
Electrical Specifications: T
A
= +25°C, Z
0
= 50 Ω, P
IN
= 0 dBm (unless otherwise noted)
Parameter
Insertion Loss
(-5 V
3
/ 0 mA Bias)
Test Conditions
8.0 GHz
8.5 GHz
9.5 GHz
10.5 GHz
8.0 GHz
8.5 GHz
9.5 GHz
10.5 GHz
8.0 GHz
8.5 GHz
9.5 GHz
10.5 GHz
8.0 GHz
8.5 GHz
9.5 GHz
10.5 GHz
10 GHz, +20 dBm,
10 & 100 MHz spacing
10 GHz, +/- 4 V, PW 500 ns,
50% duty cycle
Units
Min.
Typ.
0.70
0.70
0.75
0.85
33
35
37
39
25
28
24
18
14
18
31
14
>60
130
Max.
—
0.9
1.0
1.1
dB
—
Input to Output Isolation
(+5 V / 55 mA Bias)
dB
—
32
34
35
—
19
17
13
—
12
12
—
—
—
—
Input Return Loss
dB
—
Return Loss (Termination)
(+5 V / 55 mA Bias)
Input IP3
Switching Speed
4
dB
—
dBm
ns
—
—
3. R. Caverly and G. Hiller, “Establishing the Minimum Reverse Bias for a P-I-N Diode in a High Power Switch,” IEEE Transactions on
Microwave Theory and Techniques, Vol.38, No.12, December 1990
4. Typical switching speed measured from 10% to 90 % of detected RF signal driven by TTL compatible drivers. MACOM recommends the
application of negative DC voltage to the low loss
switch path and positive DC voltage to the isolating
switch path.
In the low loss path, the diodes are reverse biased.
In the isolating path, the diodes are forward biased.
Minimum Reverse Bias Required:
At X-Band, with a 1:1 match, 5 V of reverse bias is
required. With a 4:1 match, 10 V of reverse bias is
required.
However MACOM recommends 30 V of reverse bias
to achieve optimal operating conditions.
2
Driver Connections
DC Control Voltages
(DC Currents)
B2
-5 V
3
(0 mA)
+5 V
(55 mA typ.)
B3
+5 V
(55 mA typ.)
-5 V
3
(0 mA)
Condition of
RF Output
J1-J2
Low Loss
J1-J3
Isolation
Isolation
Low Loss
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-010647
20 W HMIC Silicon PIN Diode Terminated SPDT Switch
8.0 - 10.5 GHz
Absolute Maximum Ratings
5,6
Parameter
Applied Reverse Voltage
Bias Current
RF CW Incident Power
(Transmission)
RF CW Incident Power
(Termination)
Junction Temperature
Operating Temperature
Storage Temperature
Absolute Maximum
100 V
100 mA @ +85°C
20 W @ +85°C
2 W @ +85°C
+175°C
-40°C to +85°C
-65°C to +150°C
Rev. V2
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
HBM class 1A devices.
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6.
MACOM does not recommend sustained operation near these
survivability limits.
Functional Schematic
B3
B2
J1
J3
J2
TERM
TERM
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-010647
20 W HMIC Silicon PIN Diode Terminated SPDT Switch
8.0 - 10.5 GHz
Typical Performance: T
A
= +25°C
Insertion Loss vs. Frequency, -5V
0.0
Rev. V2
Isolation vs. Frequency, +5V
-10
-0.5
-20
-1.0
-30
-1.5
-40
-2.0
7
8
9
10
11
12
-50
7
8
9
10
11
12
Frequency (GHz)
Frequency (GHz)
Input Return Loss vs. Frequency
Transmission, +/-5V
0
Output Return Loss vs. Frequency
Termination, +5V
0
-10
-10
-20
-20
-30
-30
-40
7
8
9
10
11
12
-40
7
8
9
10
11
12
Frequency (GHz)
Frequency (GHz)
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-010647
20 W HMIC Silicon PIN Diode Terminated SPDT Switch
8.0 - 10.5 GHz
Typical Measured Large Signal Performance
Insertion Loss vs. Bias Voltage
9.5 GHz, 43 dBm CW
-0.6
+25°C
+85°C
Rev. V2
Insertion Loss vs. CW Power
9.5 GHz, -30 V
-0.5
-0.8
-0.6
+25°C
+85°C
-1.0
-0.8
-1.2
-0.9
-1.4
0
5
10
15
20
25
30
-1.0
35
36
37
38
39
40
41
42
43
44
Bias Voltage (V)
Input Power (dBm)
Outline Drawing
All dimensions shown in microns (µm).
Thickness is 125 + 10 µm.
Alignment Marks
7
5
7. Most switches will not have the alignment marks pictured above. Switches with alignment marks have the same quality and reliability
rating as switches without the alignment marks and cannot be returned as defective.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
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