Sirenza Microdevices’ SGA-9189 is a high performance transistor designed
for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and
P1dB=25.5 dBm. This RF device is based on a Silicon Germanium
Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is
cost-effective for applications requiring high linearity even at moderate
biasing levels. It is well suited for operation at both 5V and 3V.
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU Directive
2002/95. This package is also manufactured with green molding compounds
that contain no antimony trioxide nor halogenated fire retardants.
SGA-9189
SGA-9189Z
Pb
RoHS Compliant
&
Green
Package
Medium Power Discrete SiGe Transistor
Product Features
Typical Gmax, OIP3, P1dB @ 5V,180mA
25
23
21
19
17
15
13
11
9
7
5
Gmax
OIP3, P1dB (dBm)
OIP3
P1dB
44
42
40
38
36
34
32
30
28
26
24
Gmax (dB)
•
•
•
•
•
•
•
•
Available in RoHS compliant Green packaging
50-3000 MHz Operation
39 dBm Ouput IP3 Typical at 1.96 GHz
12.2 dB Gain Typical at 1.96 GHz
25.5 dBm P1dB Typical at 1.96 GHz
2.1 dB NF Typical at 0.9 GHz
Cost Effective
3-5 V Operation
Applications
•
•
•
•
Wireless Infrastructure Driver Amplifiers
CATV Amplifiers
Wireless Data, WLL Amplifiers
AN-021 contains detailed application circuits
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
Symbol
D evice C haracteristics, T = 25ºC
V
CE
= 5V, I
CQ
=180mA (unless otherw ise noted)
Maxi mum Avai lable Gai n
Z
S
=Z
S
*, Z
L
=Z
L
*
Power Gai n
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Output 1dB C ompressi on Poi nt
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Output Thi rd Order Intercept Poi nt
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
, P
OUT
= +10 dBm per tone
Noi se Fi gure
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
C ollector - Emi tter Breakdown Voltage
D C current gai n
Thermal Resi stance (juncti on-to-lead)
Operati ng Voltage (collector-to-emi tter)
Operati ng C urrent
Test Frequency
[1] 100% Tested
[2] Sample Tested
f = 900 MHz
f = 1960 MHz
f = 900 MHz [1]
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz
U nits
Min.
Typ.
20.5
13.2
Max.
G
MAX
G
P 1dB
OIP
3
NF
B V
C EO
h
FE
Rth
V
CE
I
dB
dB
dB m
dB m
dB
V
7.5
100
ºC /W
V
mA
155
17.5
11.2
23.5
36.5
19.0
12.2
25.8
25.5
40.0
39.0
2.1
2.6
8.5
180
47
20.5
13.2
300
5.5
180
195
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101497 Rev H
SGA-9189 Medium Power Discrete SiGe Transistor
Maximum Recommended Operational
Dissipated Power
1.20
Total Dissipated Power (W)
Absolute Maximum Ratings
Parameter
Max Base Current (I
B
)
Max Device Current (I
CE
)
Max Collector-Emitter Voltage (V
CEO
)
Max Collector-Base Voltage (V
CBO
)
Max Emitter-Base Voltage (V
EBO
)
Max. Junction Temp. (T
J
)
Operating Temp. Range (T
L
)
Max. Storage Temp.
*Note:
Load condition, Z
L
= 50 Ohms
Absolute Limit
5 mA
200 mA
7V
20 V
4.8 V
+150°C
See Graph
+150°C
1.00
0.80
0.60
0.40
0.20
0.00
-40
-10
20
50
80
110
140
Lead Temperature (C)
Operational Limit (Tj<130C)
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
Bias Conditions should also satisfy the following expression:
T
L
=T
LEAD
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
Typical Performance - Engineering Application Circuits (See AN-021)
Freq
(MHz )
945
1960
2140
2440
1
V
CE
(V)
5
5
5
5
I
CQ
(mA)
184
179
180
180
P1dB OIP3
1
(dBm) (dBm)
25.8
25.5
25.4
25.4
39.5
40.0
39.0
40.0
Gain
(dB)
18.8
12.2
11.3
10.2
S11
(dB)
-14
-23
-20
-20
S 22
(dB)
-26
-21
-14
-17
NF
(dB)
2.1
2.4
2.6
2.7
Z
SOPT
(Ω )
Ω
6.8 - j0.85
7.6 - j11.2
18.1 + j3.4
5.6 - j15.1
Z
LOPT
(Ω )
Ω
16 + j5.9
22.8 + j0.7
23.8 - j9.0
23.1 - j2.7
P
OUT
= +10 dBm per tone for V
CE
=5V, 1 MHz tone spacing
Freq
(MHz )
945
1960
2440
2
V
CE
(V)
3
3
3
I
CQ
(mA)
165
162
165
P1dB OIP3
2
(dBm) (dBm)
22.1
22.4
23.2
34.3
35.0
35.3
Gain
(dB)
17.7
11.8
9.9
S11
(dB)
-18
-18
-20
S 22
(dB)
-11
-16
-15
NF
(dB)
2.1
2.2
2.6
Z
SOPT
(Ω )
Ω
9.6 - j1.6
7.8 - j13.1
8.1 - j16.0
Z
LOPT
(Ω )
Ω
11.0 + j1.4
19.3 - j2.9
21.0 - j6.5
P
OUT
= +6 dBm per tone for V
CE
=3V, 1 MHz tone spacing
Data above represents typical performance of the application circuits noted in Application Note AN-021. Refer to the application
note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing
instructions and other key issues to be considered. For the latest application notes please visit our site at www.sirenza.com or
call your local sales representative.
C
B
Z
LOPT
Z
SOPT
E
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101497 Rev H
2
SGA-9189 Medium Power Discrete SiGe Transistor
De-embedded S-Parameters (Z
S
=Z
L
=50 Ohms, V
CE
=5V, I
CQ
=185mA, 25
°
C)
45
35
Insertion Gain & Isolation
5
-5
25
15
5
Gain
Isolation
-15
-25
Gmax
-35
-45
-5
0
1
2
3
4
5
6
7
8
30
25
20
15
10
5
0
-5
-10
0
Insertion Gain vs Temperature
Gain vs. Temp (dB)
Isolation (dB)
Gain (dB)
T = -40, 25, 85°C
1
2
3
4
5
6
7
8
Frequency (GHz)
S11 vs Frequency
1.0
0.5
Frequency (GHz)
S22 vs Frequency
1.0
2.0
0.5
2.0
4 GHz
5 GHz
3 GHz
4 GHz
3 GHz
5.0
0.2
5 GHz
0.2
2 GHz
8 GHz
1 GHz
5.0
2 GHz
8 GHz
1 GHz
0.0
0.2
0.5
1.0
2.0
5.0
inf
0.0
0.2
0.5
1.0
2.0
5.0
inf
S11
0.2
5.0
0.2
5.0
50 MHz
S22
50 MHz
0.5
2.0
0.5
2.0
1.0
1.0
Note: S-parameters are de-embedded to the device leads with Z
S
=Z
L
=50Ω. The data represents typical performace of the device.
De-embedded s-parameters can be downloaded from our website (www.sirenza.com).
400
350
300
DC-IV Curves
I
b
= 0.4 - 3.6 mA , 0.4 mA steps
T=25C
I
C
(mA)
250
200
150
100
50
0
0
2
4
6
8
V
CE
(V)
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101497 Rev H
3
SGA-9189 Medium Power Discrete SiGe Transistor
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
Part Number Ordering Information
Pin Description
Pin #
1
2
3
4
P art N umber
S GA -9189
S GA -9189Z
R eel S iz e
13"
13"
D evices/R eel
3000
3000
Function
B a se
Emitter
Collector
Emitter
RF Input
Description
Connection to ground. Use via holes to reduce lead
inductance. Place vias as close to ground leads as possible.
RF Output
Same as Pin 2
Part Symbolization
The part will be symbolized with the “P1” (“P1Z”
for RoHS version) designator and a dot signifying
pin 1 on the top surface of the package.
Mounting and Thermal Considerations
It is very important that adequate heat sinking be provided to
minimize the device junction temperature. The following items
should be implemented to maximize MTTF and RF performance.
1. Multiple solder-filled vias are required directly below the
ground tab (pin 4). [CRITICAL]
2. Incorporate a large ground pad area with multiple plated-
through vias around pin 4 of the device. [CRITICAL]
3. Use two point board seating to lower the thermal resistance
between the PCB and mounting plate. Place machine screws
as close to the ground tab (pin 4) as possible. [RECOMMENDED]
4. Use 2 ounce copper to improve the PCB’s heat spreading
stm32/stm8
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