RN1307~RN1309
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1307,RN1308,RN1309
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
With built-in bias resistors.
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN2307~RN2309
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2207
RN2208
RN2209
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
Maximum Ratings
(Ta = 25°C)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1307
Emitter-base voltage
RN1308
RN1309
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
I
c
P
c
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
6
7
15
100
100
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.006g
Unit
V
V
―
SC-70
2-2E1A
V
mA
mW
°C
°C
1
2001-06-07
RN1307~RN1309
Electrical Characteristics
(Ta = 25°C)
°
Characteristic
Collector cut-off current
RN1307
Emitter cut-off current
RN1308
RN1309
RN1307
DC current gain
RN1308
RN1309
Collector-emitter saturation voltage
RN1307
Input voltage (ON)
RN1308
RN1309
RN1307
Input voltage (OFF)
RN1308
RN1309
Translation frequency
Collector output capacitance
RN1307
Input resistor
RN1308
RN1309
RN1307
Resistor ratio
RN1308
RN1309
R1/R2
R1
f
T
C
ob
V
I (OFF)
V
I (ON)
V
CE (sat)
h
FE
I
EBO
Symbol
I
CBO
I
CEO
Test
Circuit
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
V
CE
= 10V, I
C
= 5mA
V
CB
= 10V, I
E
= 0,
f = 1MHz
V
CE
= 5V, I
C
= 0.1mA
V
CE
= 0.2V, I
C
= 5mA
I
C
= 5mA, I
B
= 0.25mA
V
CE
= 5V, I
C
= 10mA
Test Condition
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 6V, I
C
= 0
V
EB
= 7V, I
C
= 0
V
EB
= 15V, I
C
= 0
Min
―
―
0.081
0.078
0.167
80
80
70
―
0.7
1.0
2.2
0.5
0.6
1.5
―
―
7
15.4
32.9
0.191
0.421
1.92
Typ.
―
―
―
―
―
―
―
―
0.1
―
―
―
―
―
―
250
3
10
22
47
0.213
0.468
2.14
Max
100
500
0.15
0.145
0.311
―
―
―
0.3
1.8
2.6
5.8
1.0
1.16
2.6
―
6
13
28.6
61.1
0.232
0.515
2.35
―
kΩ
MHz
pF
V
V
V
―
mA
Unit
nA
2
2001-06-07
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