IRFN130SMD
MECHANICAL DATA
Dimensions in mm (inches)
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V
DSS
I
D(cont)
R
DS(on)
FEATURES
• HERMETICALLY SEALED
• SIMPLE DRIVE REQUIREMENTS
Pad 3 – Gate
1
3
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
2
SMD1
Pad 1 – Source
Pad 2 – Drain
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
100V
11A
0.19
W
0 .7 6
(0 .0 3 0 )
m in .
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
* Also available as IRF130SM with Pin1(Source) and Pin3 (Gate) reversed.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
stg
R
q
JC
Gate – Source Voltage
Continuous Drain Current @ T
case
= 25°C
Continuous Drain Current @ T
case
= 100°C
Pulsed Drain Current
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
±20V
11A
7A
44A
45W
0.36W/°C
–55 to 150°C
2.8°C/W max.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Prelim. 7/00
IRFN130SMD
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Parameter
BV
DSS
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Test Conditions
V
GS
= 0
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
³
15V
V
GS
= 0
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 11A
V
DS
= 0.5BV
DSS
V
DD
= 50V
I
D
= 11A
R
G
= 7.5
W
I
D
= 11A
I
D
= 7A
I
D
= 11A
I
D
= 250
m
A
I
DS
= 7A
V
DS
= 0.8BV
DSS
T
J
= 125°C
I
D
= 1mA
Min.
100
Typ.
Max.
Unit
V
D
BV
DSS
Temperature Coefficient of
D
T
J
Breakdown Voltage
R
DS(on)
Static Drain – Source On–State
Resistance
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Reference to 25°C
0.1
0.19
0.22
2
3
25
250
100
-100
650
240
44
12.8
1.0
3.8
28.5
6.3
16.6
30
75
40
45
11
43
4
V / °C
W
V
)
W
(
S(
W
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
m
A
nA
pF
nC
nC
ns
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
PACKAGE CHARACTERISTICS
Internal Drain Inductance
Internal Source Inductance
I
S
= 11A
V
GS
= 0
I
S
= 11A
T
J
= 25°C
d
i
/ d
t
£
100A/
m
s V
DD
£
50V
(from 6mm down drain lead pad to centre of die)
A
V
ns
T
J
= 25°C
1.5
300
3
8.7
8.7
m
C
nH
(from 6mm down source lead to centre of source bond pad)
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Prelim. 7/00
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
