IRF150
MECHANICAL DATA
Dimensions in mm (inches)
39.95 (1.573)
max.
30.40 (1.197)
30.15 (1.187)
17.15 (0.675)
16.64 (0.655)
N–CHANNEL
POWER MOSFET
V
DSS
I
D(cont)
R
DS(on)
FEATURES
• HERMETICALLY SEALED TO–3 METAL
PACKAGE
7.87 (0.310)
6.99 (0.275)
1
20.32 (0.800)
18.80 (0.740)
dia.
1.78 (0.070)
1.52 (0.060)
11.18 (0.440)
10.67 (0.420)
26.67 (1.050)
max.
4.09 (0.161)
3.84 (0.151)
dia.
2 plcs.
2
100V
38A
Ω
0.055Ω
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
1.57 (0.062)
1.47 (0.058)
dia.
2 plcs.
TO–3 Metal Package
Pin 1 – Gate
Pin 2 – Source
Case – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
E
AS
I
AR
E
AR
dv/dt
T
J
, T
stg
T
L
Notes
1) Pulse Test: Pulse Width
≤
300µs,
δ ≤
2%
2) @ V
DD
= 50V , L
≥
160µH , R
G
= 25Ω , Peak I
L
= 38A , Starting T
J
= 25°C
3) @ I
SD
≤
38A , di/dt
≤
300A/µs , V
DD
≤
BV
DSS
, T
J
≤
150°C , Suggested R
G
= 2.35Ω
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
2
Repetitive Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Lead Temperature
1.6mm (0.63”) from case for 10 sec.
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
12.07 (0.475)
11.30 (0.445)
±20V
38A
24A
152A
150W
1.2W/°C
150mJ
38A
15mJ
5.5V/ns
-55 to +150°C
300°C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/96
IRF150
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
BV
DSS
∆BV
DSS
∆T
J
R
DS(on)
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Test Conditions
V
GS
= 0
I
D
= 1mA
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
≥
15V
V
GS
= 0
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 38A
V
DS
= 0.5BV
DSS
V
DD
= 50V
I
D
= 38A
R
G
= 2.35Ω
I
D
= 24A
I
D
= 38A
I
D
= 250mA
I
DS
= 24A
V
DS
= 0.8BV
DSS
T
J
= 125°C
Min.
100
Typ.
Max.
Unit
V
0.13
0.055
0.065
2
9
25
250
100
–100
3700
1100
200
50
8
25
125
22
65
35
190
170
130
38
152
4
V / °C
Ω
V
S (É)
µA
nA
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
pF
nC
ns
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
I
S
= 38A
Diode Forward Voltage
1
V
GS
= 0
Reverse Recovery Time
I
F
= 38A
Reverse Recovery Charge
1
Forward Turn–On Time
A
V
ns
µC
T
J
= 25°C
T
J
= 25°C
Negligible
5.0
13
1.8
500
2.9
d
i
/ d
t
≤
100A/µs V
DD
≤
50V
PACKAGE CHARACTERISTICS
Internal Drain Inductance
(measured from 6mm down drain lead to centre of die)
Internal Source Inductance
(from 6mm down source lead to source bond pad)
THERMAL CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Case – Sink
Thermal Resistance Junction – Ambient
nH
R
θJC
R
θCS
R
θJA
0.83
0.12
30
°C/W
Notes
1) Pulse Test: Pulse Width
≤
300ms,
δ ≤
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/96
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