INTEGRATED CIRCUITS
NE/SE5539
High frequency operational amplifier
Product data
Supersedes data of 2001 Aug 03
File under Integrated Circuits, IC11 Data Handbook
2002 Jan 25
Philips
Semiconductors
Philips Semiconductors
Product data
High frequency operational amplifier
NE/SE5539
DESCRIPTION
The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic
operational amplifier for use in video amplifiers, RF amplifiers, and
extremely high slew rate amplifiers.
Emitter-follower inputs provide a true differential input impedance
device. Proper external compensation will allow design operation
over a wide range of closed-loop gains, both inverting and
non-inverting, to meet specific design requirements.
PIN CONFIGURATION
D, N Packages
+ INPUT
NC
–V
SUPPLY
NC
1
2
3
4
5
6
7
+
–
14
13
12
11
– INPUT
NC
FREQUENCY
COMPENS.
NC
FEATURES
•
Bandwidth
V
OS
ADJ/
A
V
ADJ
NC
GROUND
10 +V
9
8
NC
OUTPUT
–
Unity gain: 350 MHz
–
Full power: 48 MHz
–
GBW: 1.2 GHz at 17 dB
•
Slew rate: 600/V
µ
s
•
A
VOL
: 52 dB typical
•
Low noise: 4 nV√Hz typical
TOP VIEW
SL00570
Figure 1. Pin Configuration
APPLICATIONS
•
High speed datacom
•
Video monitors & TV
•
Satellite communications
•
Image processing
•
RF instrumentation & oscillators
•
Magnetic storage
ORDERING INFORMATION
DESCRIPTION
14-Pin Plastic Dual In-Line Package (DIP)
14-Pin Plastic Small Outline (SO) package
14-Pin Plastic Dual In-Line Package (DIP)
TEMPERATURE RANGE
0
°C
to +70
°C
0
°C
to +70
°C
–55
°C
to +125
°C
ORDER CODE
NE5539N
NE5539D
SE5539N
DWG #
SOT27-1
SOT108-1
SOT27-1
ABSOLUTE MAXIMUM RATINGS
1
SYMBOL
V
CC
P
D(max)
Supply voltage
Maximum power dissipation; T
amb
= 25
°C
(still-air)
2
N package
D package
Operating temperature range
NE5539D, NE5539N
SE5539N
Storage temperature range
Max junction temperature
Lead soldering temperature (10 sec max)
PARAMETER
RATING
±12
1.45
0.99
0 to +70
–55 to +125
–65 to +150
+150
+230
UNITS
V
W
W
°C
°C
°C
°C
°C
T
amb
T
stg
T
j
T
sld
NOTES:
1. Differential input voltage should not exceed 0.25 V to prevent excessive input bias current and common-mode voltage 2.5 V. These voltage
limits may be exceeded if current is limited to less than 10 mA.
2. Derate above 25
°C,
at the following rates:
N package at 11.6 mW/°C
D package at 7.9 mW/°C
2002 Jan 25
2
853-0814 27610
Philips Semiconductors
Product data
High frequency operational amplifier
NE/SE5539
DC ELECTRICAL CHARACTERISTICS
V
CC
=
±8
V, T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
V
OS
∆V
OS
/∆T
I
OS
∆I
OS
/∆T
I
B
∆I
B
/∆T
CMRR
R
IN
R
OUT
Common mode rejection ratio
Input impedance
Output impedance
R
L
= 150
Ω
to GND
and 470
Ω
to –V
CC
V
O
OUT
Output voltage swing
R
L
= 25
Ω
to GND
Over temp.
R
L
= 25
Ω
to GND
T
amb
= 25
°C
I
CC
CC+
I
CC
CC–
PSRR
Positive supply current
Negative supply current
Power supply rejection ratio
+Swing
–Swing
+Swing
–Swing
+Swing
–Swing
+2.3
–1.5
+2.5
–2.0
+3.0
–2.1
+3.1
–2.7
14
14
11
11
300
18
17
15
14
1000
200
47
52
1000
57
11
15
14
18
F = 1 kHz; R
S
= 100
Ω;
V
CM
±1.7
V
Over temp.
70
70
Input bias current
Over temp.
T
amb
= 25
°C
Input offset current
Over temp.
T
amb
= 25
°C
PARAMETER
Input offset voltage
TEST CONDITIONS
V
O
= 0 V;
R
S
= 100
Ω
Over temp.
T
amb
= 25
°C
SE5539
MIN
TYP
2
2
5
0.1
0.1
0.5
6
5
10
80
80
100
10
+2.3
–1.7
100
10
+2.7
–2.2
70
25
13
5
10
80
20
3
1
0.5
2
MAX
5
3
2.5
5
5
MIN
NE5539
TYP
MAX
UNITS
mV
µV/°C
µA
nA/°C
µA
nA/°C
dB
kΩ
Ω
V
V
V
mA
mA
µV/V
dB
dB
dB
V
O
= 0 V, R
1
=
∞;
Over temp.
V
O
= 0 V, R
1
=
∞;
T
amb
= 25
°C
V
O
= 0 V, R
1
=
∞;
Over temp.
V
O
= 0 V, R
1
=
∞;
T
amb
= 25
°C
∆V
CC
=
±1
V; Over temp.
∆V
CC
=
±1
V; T
amb
= 25
°C
V
O
= +2.3 V, –1.7 V;
R
L
= 150
Ω
to GND, 470
Ω
to –V
CC
A
VOL
Large signal voltage gain
L
i
l lt
i
V
O
= +2.3 V, –1.7 V;
,
R
L
= 2
Ω
to GND
V
O
= +2.5 V, –2.0 V;
,
R
L
= 2
Ω
to GND
Over temp.
T
amb
= 25
°C
Over temp.
T
amb
= 25
°C
46
48
53
60
58
47
52
57
2002 Jan 25
4
Philips Semiconductors
Product data
High frequency operational amplifier
NE/SE5539
DC ELECTRICAL CHARACTERISTICS
V
CC
=
±6
V, T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
V
OS
I
OS
I
B
CMRR
I
CC
CC+
I
CC
CC–
PSRR
PARAMETER
Input offset voltage
Input offset current
Input bias current
Common-mode rejection ratio
Positive supply current
Negative supply current
Power supply rejection ratio
∆V
CC
=
±1
V
Over temp
temp.
T
amb
= 25
°C
V
CM
=
±1.3
V; R
S
= 100
Ω
Over temp.
T
amb
= 25
°C
Over temp.
T
amb
= 25° C
Over temp.
T
amb
= 25
°C
+Swing
–Swing
+Swing
–Swing
+1.4
–1.1
+1.5
–1.4
+2.0
–1.7
+2.0
–1.8
V
TEST CONDITIONS
Over temp.
T
amb
= 25
°C
Over temp.
T
amb
= 25
°C
Over temp.
T
amb
= 25
°C
70
SE5539
MIN
TYP
2
2
0.1
0.1
5
4
85
11
11
8
8
300
14
13
11
10
1000
MAX
5
3
3
1
20
10
UNITS
mV
µA
µA
dB
mA
mA
µV/V
V
O
OUT
Output voltage swing
R
L
= 150
Ω
to GND
and 390
Ω
to –V
CC
2002 Jan 25
5
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