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3SK153-OTE85L: 产品描述TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal; 产品类别分立半导体晶体管; 文件大小108KB，共4页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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3SK153-OTE85L概述

TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal

3SK153-OTE85L规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
包装说明	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknow
ECCN代码	EAR99
外壳连接	SOURCE
配置	SINGLE
最小漏源击穿电压	13.5 V
最大漏极电流 (ID)	0.03 A
FET 技术	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	0.05 pF
最高频带	ULTRA HIGH FREQUENCY BAND
JESD-30 代码	R-PDSO-G4
JESD-609代码	e0
元件数量	1
端子数量	4
工作模式	DUAL GATE, DEPLETION MODE
最高工作温度	125 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	240
极性/信道类型	N-CHANNEL
最小功率增益 (Gp)	14 dB
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
Base Number Matches	1

3SK153-OTE85L相似产品对比

	3SK153-OTE85L	3SK153OTE85L	3SK153OTE85R	3SK153-OTE85R	3SK153TE85R	3SK153TE85L
描述	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown	unknow
外壳连接	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	13.5 V	13.5 V	13.5 V	13.5 V	13.5 V	13.5 V
最大漏极电流 (ID)	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	0.05 pF	0.05 pF	0.05 pF	0.05 pF	0.05 pF	0.05 pF
最高频带	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 代码	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
JESD-609代码	e0	e0	e0	e0	e0	e0
元件数量	1	1	1	1	1	1
端子数量	4	4	4	4	4	4
工作模式	DUAL GATE, DEPLETION MODE	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	240	240	240	240	240	240
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最小功率增益 (Gp)	14 dB	14 dB	14 dB	14 dB	14 dB	14 dB
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子面层	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
包装说明	SMALL OUTLINE, R-PDSO-G4	-	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
ECCN代码	EAR99	-	-	EAR99	EAR99	EAR99
Base Number Matches	1	1	1	1	1	-

3SK153-OTE85L

3SK153-OTE85L概述

3SK153-OTE85L规格参数

3SK153-OTE85L相似产品对比

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