BC846, BC847, BC848
Series
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
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COLLECTOR
3
1
BASE
2
EMITTER
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC846
BC847
BC848
Collector-Base Voltage
BC846
BC847
BC848
Emitter-Base Voltage
BC846
BC847
BC848
Collector Current
−
Continuous
Symbol
V
CEO
Value
65
45
30
V
80
50
30
V
6.0
6.0
5.0
100
mAdc
Unit
V
1
2
3
SC−70/SOT−323
CASE 419
STYLE 3
V
CBO
MARKING DIAGRAM
V
EBO
XX MG
G
I
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
XX
= Specific Device Code
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 x 0.75 x 0.062 in.
Symbol
P
D
R
qJA
T
J
, T
stg
Max
150
833
−55
to
+150
Unit
mW
°C/W
°C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
October, 2010
−
Rev. 7
1
Publication Order Number:
BC846AWT1/D
BC846, BC847, BC848 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
= 10 mA)
Collector
−Emitter
Breakdown Voltage
(I
C
= 10
mA,
V
EB
= 0)
Collector
−Base
Breakdown Voltage
(I
C
= 10
mA)
Emitter
−Base
Breakdown Voltage
(I
E
= 1.0
mA)
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mA,
V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
−
−
−
110
200
420
−
−
−
−
580
−
90
150
270
180
290
520
−
−
0.7
0.9
660
−
−
−
−
220
450
800
0.25
0.6
−
−
700
770
V
V
mV
−
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
V
(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
15
5.0
V
Symbol
Min
Typ
Max
Unit
V
(BR)CES
V
V
(BR)CBO
V
V
(BR)EBO
V
I
CBO
nA
mA
Collector
−Emitter
Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base
−Emitter
Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base
−Emitter
Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base
−Emitter
Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base
−Emitter
Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base
−Emitter
Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
Noise Figure (I
C
= 0.2 mA, V
CE
= 5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
f
T
C
obo
NF
100
−
−
−
−
−
−
4.5
10
MHz
pF
dB
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2
BC846, BC847, BC848 Series
BC846A, BC847A, BC848A
300
150°C
0.18
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 1 V
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.0001
0.001
0.01
0.1
−55°C
25°C
I
C
/I
B
= 20
150°C
h
FE
, DC CURRENT GAIN
200
25°C
100
−55°C
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
−55°C
25°C
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.0
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
150°C
I
C
/I
B
= 20
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
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3
BC846, BC847, BC848 Series
BC846A, BC847A, BC848A
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
T
A
= 25°C
1.6
I
C
= 200 mA
1.2
I
C
=
I
C
=
10 mA 20 mA
0.8
I
C
= 50 mA
I
C
= 100 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.4
0
0.02
0.1
1.0
I
B
, BASE CURRENT (mA)
10
20
0.2
10
1.0
I
C
, COLLECTOR CURRENT (mA)
100
Figure 5. Collector Saturation Region
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
10
7.0
C, CAPACITANCE (pF)
5.0
C
ib
T
A
= 25°C
400
300
200
Figure 6. Base−Emitter Temperature Coefficient
3.0
C
ob
2.0
100
80
60
40
30
20
0.5 0.7
V
CE
= 10 V
T
A
= 25°C
1.0
0.4
0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
V
R
, REVERSE VOLTAGE (VOLTS)
40
1.0
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
Figure 7. Capacitances
Figure 8. Current−Gain
−
Bandwidth Product
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4
BC846, BC847, BC848 Series
BC846B
600
500
400
300
200
100
0
−55°C
150°C
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 1 V
0.30
I
C
/I
B
= 20
0.25
0.20
25°C
0.15
0.10
−55°C
0.05
0
150°C
h
FE
, DC CURRENT GAIN
25°C
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 9. DC Current Gain vs. Collector
Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I
C
/I
B
= 20
−55°C
25°C
150°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
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