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CAT28C512GI-15T: 产品描述eeprom 512k-bit cmos para eeprom; 产品类别存储存储; 文件大小89KB，共12页; 制造商Catalyst; 官网地址http://www.catalyst-semiconductor.com/; 标准

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CAT28C512GI-15T概述

eeprom 512k-bit cmos para eeprom

CAT28C512GI-15T规格参数

参数名称	属性值
是否Rohs认证	符合
零件包装代码	QFJ
包装说明	QCCJ, LDCC32,.5X.6
针数	32
Reach Compliance Code	unknown
ECCN代码	EAR99
最长访问时间	150 ns
命令用户界面	NO
数据轮询	YES
耐久性	100000 Write/Erase Cycles
JESD-30 代码	R-PQCC-J32
JESD-609代码	e3
长度	13.97 mm
内存密度	524288 bit
内存集成电路类型	EEPROM
内存宽度	8
湿度敏感等级	3
功能数量	1
端子数量	32
字数	65536 words
字数代码	64000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	64KX8
封装主体材料	PLASTIC/EPOXY
封装代码	QCCJ
封装等效代码	LDCC32,.5X.6
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
页面大小	128 words
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
电源	5 V
编程电压	5 V
认证状态	Not Qualified
座面最大高度	3.55 mm
最大待机电流	0.0002 A
最大压摆率	0.05 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	MATTE TIN
端子形式	J BEND
端子节距	1.27 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	40
切换位	YES
宽度	11.43 mm
最长写入周期时间 (tWC)	5 ms
Base Number Matches	1

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CAT28C512/513

512K-Bit CMOS PARALLEL EEPROM

FEATURES

Fast Read Access Times: 120/150 ns

Low Power CMOS Dissipation:

Automatic Page Write Operation:

–Active: 50 mA Max.

–Standby: 200

A Max.

Simple Write Operation:

–1 to 128 Bytes in 5ms

–Page Load Timer

End of Write Detection:

–On-Chip Address and Data Latches

–Self-Timed Write Cycle with Auto-Clear

Fast Write Cycle Time:

–Toggle Bit

–DATA Polling

DATA

Hardware and Software Write Protection

100,000 Program/Erase Cycles

100 Year Data Retention

Commercial, Industrial and Automotive

–5ms Max

CMOS and TTL Compatible I/O

Temperature Ranges

DESCRIPTION

The CAT28C512/513 is a fast,low power, 5V-only CMOS

parallel EEPROM organized as 64K x 8-bits. It requires

a simple interface for in-system programming. On-chip

address and data latches, self-timed write cycle with

auto-clear and V

power up/down write protection

eliminate additional timing and protection hardware.

DATA

Polling and Toggle status bits signal the start and

end of the self-timed write cycle. Additionally, the

CAT28C512/513 features hardware and software write

protection.

The CAT28C512/513 is manufactured using Catalyst’s

advanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles and has a data

retention of 100 years. The device is available in JEDEC

approved 32-pin DIP, PLCC and TSOP packages.

BLOCK DIAGRAM

ADDR. BUFFER

& LATCHES

INADVERTENT

WRITE

PROTECTION

ROW

DECODER

65,536 x 8

EEPROM

ARRAY

128 BYTE PAGE

A7–A15

VCC

HIGH VOLTAGE

GENERATOR

CONTROL

I/O BUFFERS

TIMER

DATA POLLING

AND

TOGGLE BIT

COLUMN

DECODER

I/O0–I/O7

A0–A6

ADDR. BUFFER

& LATCHES

Characteristics subject to change without notice

Doc. No. MD-1007, Rev. I

CAT28C512GI-15T相似产品对比

	CAT28C512GI-15T	CAT28C512LI-15	CAT28C513GI-12	CAT28C512HI-12	CAT28C513GI-15	CAT28C512LI-12	CAT28C512GI-12	CAT28C512HI-15	CAT28C512GI-15
描述	eeprom 512k-bit cmos para eeprom	EEPROM, 64KX8, 150ns, Parallel, CMOS, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32	EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32	EEPROM, 64KX8, 120ns, Parallel, CMOS, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32	EEPROM, 64KX8, 150ns, Parallel, CMOS, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32	EEPROM, 64KX8, 120ns, Parallel, CMOS, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32	EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32	EEPROM, 64KX8, 150ns, Parallel, CMOS, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32	EEPROM, 64KX8, 150ns, Parallel, CMOS, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合	符合
零件包装代码	QFJ	DIP	QFJ	TSOP	QFJ	DIP	QFJ	TSOP	QFJ
包装说明	QCCJ, LDCC32,.5X.6	DIP, DIP32,.6	QCCJ, LDCC32,.5X.6	TSSOP, TSSOP32,.8,20	QCCJ, LDCC32,.5X.6	DIP, DIP32,.6	QCCJ, LDCC32,.5X.6	TSSOP, TSSOP32,.8,20	QCCJ, LDCC32,.5X.6
针数	32	32	32	32	32	32	32	32	32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	150 ns	150 ns	120 ns	120 ns	150 ns	120 ns	120 ns	150 ns	150 ns
命令用户界面	NO	NO	NO	NO	NO	NO	NO	NO	NO
数据轮询	YES	YES	YES	YES	YES	YES	YES	YES	YES
耐久性	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 代码	R-PQCC-J32	R-PDIP-T32	R-PQCC-J32	R-PDSO-G32	R-PQCC-J32	R-PDIP-T32	R-PQCC-J32	R-PDSO-G32	R-PQCC-J32
JESD-609代码	e3	e3	e3	e3	e3	e3	e3	e3	e3
长度	13.97 mm	42.03 mm	13.97 mm	18.4 mm	13.97 mm	42.03 mm	13.97 mm	18.4 mm	13.97 mm
内存密度	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit
内存集成电路类型	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
内存宽度	8	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1	1
端子数量	32	32	32	32	32	32	32	32	32
字数	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words
字数代码	64000	64000	64000	64000	64000	64000	64000	64000	64000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	QCCJ	DIP	QCCJ	TSSOP	QCCJ	DIP	QCCJ	TSSOP	QCCJ
封装等效代码	LDCC32,.5X.6	DIP32,.6	LDCC32,.5X.6	TSSOP32,.8,20	LDCC32,.5X.6	DIP32,.6	LDCC32,.5X.6	TSSOP32,.8,20	LDCC32,.5X.6
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	IN-LINE	CHIP CARRIER	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	CHIP CARRIER	IN-LINE	CHIP CARRIER	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	CHIP CARRIER
页面大小	128 words	128 words	128 words	128 words	128 words	128 words	128 words	128 words	128 words
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	260	260	260	260	260	260	260
电源	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
编程电压	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	3.55 mm	5.08 mm	3.55 mm	1.2 mm	3.55 mm	5.08 mm	3.55 mm	1.2 mm	3.55 mm
最大待机电流	0.0002 A	0.0002 A	0.0002 A	0.0002 A	0.0002 A	0.0002 A	0.0002 A	0.0002 A	0.0002 A
最大压摆率	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	NO	YES	YES	YES	NO	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子面层	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
端子形式	J BEND	THROUGH-HOLE	J BEND	GULL WING	J BEND	THROUGH-HOLE	J BEND	GULL WING	J BEND
端子节距	1.27 mm	2.54 mm	1.27 mm	0.5 mm	1.27 mm	2.54 mm	1.27 mm	0.5 mm	1.27 mm
端子位置	QUAD	DUAL	QUAD	DUAL	QUAD	DUAL	QUAD	DUAL	QUAD
处于峰值回流温度下的最长时间	40	40	30	40	40	40	40	40	40
切换位	YES	YES	YES	YES	YES	YES	YES	YES	YES
宽度	11.43 mm	15.24 mm	11.43 mm	8 mm	11.43 mm	15.24 mm	11.43 mm	8 mm	11.43 mm
最长写入周期时间 (tWC)	5 ms	5 ms	5 ms	5 ms	5 ms	5 ms	5 ms	5 ms	5 ms
湿度敏感等级	3	-	3	2A	3	-	3	2A	3
Base Number Matches	1	1	1	1	1	1	1	1	-
厂商名称	-	Catalyst	Catalyst	Catalyst	Catalyst	Catalyst	Catalyst	-	Catalyst

CAT28C512GI-15T

CAT28C512GI-15T概述

CAT28C512GI-15T规格参数

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CAT28C512GI-15T相似产品对比

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