SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 FEBRUARY 95
PARTMARKING DETAIL
BCX70G
BCX70H
BCX70J
BCX70K
BCX70GR
BCX70HR
BCX70JR
BCX70KR
BCX71
AG
AH
AJ
AK
AW
9P
AX
P9
BCX70
E
C
B
COMPLEMENTARY TYPE
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
ABSOLUTE MAXIMUM RATINGS.
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
B
P
TOT
tj:tstg
VALUE
45
45
5
200
50
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
FOUR TERMINAL NETWORK DATA (I
c
=2mA, V
CE
=5V, f=1kHz)
h
FE
Group G
Min.
h
11e
h
12e
h
21e
h
22e
1.6
Typ.
2.7
1.5
200
18
30
Max.
4.5
h
FE
Group H
Min.
2.5
Typ.
3.6
2
260
24
50
Max.
6.0
h
FE
Group J
Min.
3.2
Typ.
4.5
2
330
30
60
Max.
8.5
h
FE
Group K
Min.
4.5
Typ.
7.5
3
520
50
100
µ
S
Max.
12
k
Ω
10
-4
SWITCHING CIRCUIT
-V
BB
V
CC
(+10V)
R
2
R
L
1
µ
sec
+10V
t
r
< 5nsec
Mark/Space ratio < 0.01
Z
s
=50
Ω
50
Ω
R
1
t
r
< 5nsec
Z
in
≥
100k
Ω
Oscilloscope
PAGE NO
BCX70
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP.
45
5
20
20
20
0.12
0.20
0.60
0.70
0.55
120
50
20
180
70
40
250
90
100
380
100
125
0.70
0.83
0.52
0.65
0.78
78
170
145
250
220
350
300
500
250
8
4.5
2
6
0.35
0.55
0.85
1.05
0.75
220
310
460
630
MHz
pF
pF
dB
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cut-off Current
Emitter-Base Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base - Emitter Voltage
Static Forward Current
Transfer Ratio
V
(BR)CEO
V
(BR)EBO
I
CES
I
EBO
V
CE(sat)
V
BE(SAT)
V
BE
BCX70G
BCX70H
BCX70J
BCX70K
Transition Frequency
Emitter-Base Capacitance
Collector-Base Capacitance
Noise Figure
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
V
V
µ
A
MAX. UNIT CONDITIONS.
I
C
=2mA
I
EBO
=1
µ
A
V
CES
=45V
V
CES
=45V,
T
amb
=150oC
V
EBO
=4V
I
C
=10mA,I
B
= 0.25mA
I
C
= 50mA, I
B
=1.25mA
I
C
=10mA,I
B
=0.25mA,
I
C
=50mA, I
B
=1.25mA
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
I
C
=10mA, V
CE
=5V
f = 100MHz
V
EBO
=0.5V, f =1MHz
V
CBO
=10V, f =1MHz
I
C
= 0.2mA, V
CE
= 5V
R
G
=2K
Ω,
f=1KH
∆
f=200Hz
I
C
:I
B1
:- I
B2
=10:1:1mA
R
1
=5K
Ω,
R
2
=5K
Ω
V
BB
=3.6V, R
L
=990
Ω
nA
nA
V
V
V
V
V
V
V
h
FE
h
FE
h
FE
h
FE
f
T
C
ebo
C
cbo
N
t
d
t
r
t
on
t
s
t
f
t
off
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
Spice parameter data is available upon request for this device
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