VSKCS203/100P
Vishay High Power Products
Schottky Rectifier, 200 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• UL pending
ADD-A-PAK
• Totally lead (Pb)-free, RoHS compliant
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
F(AV)
200 A
MECHANICAL DESCRIPTION
The Generation 5 of ADD-A-PAK module combine the
excellent thermal performance obtained by the usage of
direct bonded copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the majority
of heatsink with increased tolerance of surface roughness
and improved thermal spread.
The Generation 5 of ADD-A-PAK module is manufactured
without hard mold, eliminating in this way any possible direct
stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.
DESCRIPTION
The VSKCS203.. Schottky rectifier common cathode has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
100 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
200
100
12 800
0.76
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VSKCS203/100P
100
UNITS
V
Document Number: 94430
Revision: 23-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
VSKCS203/100P
Vishay High Power Products
Schottky Rectifier, 200 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
per module
per leg
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 119 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
200
100
12 800
1700
15
1
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 5.5 A, L = 1 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
100 A
Maximum forward voltage drop
V
FM (1)
200 A
100 A
200 A
Maximum reverse leakage curent
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
RMS insulation voltage
Note
(1)
Pulse width < 500 µs
I
RM (1)
C
T
L
S
dV/dt
V
INS
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
VALUES
0.9
1.19
0.76
0.98
3
40
2750
7.0
10 000
3500
mA
pF
nH
V/µs
V
V
UNITS
T
J
= 125 °C
V
R
= Rated V
R
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
From top of terminal hole to mounting plane
Rated V
R
50 Hz, circuit to base, all terminals shorted (1 s)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
case to heatsink
Approximate weight
to heatsink
busbar
JEDEC
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 175
0.6
°C/W
0.1
110
4
5
4
g
oz.
Nm
UNITS
°C
Mounting torque ± 10 %
Case style
TO-240AA
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2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94430
Revision: 23-Apr-08
VSKCS203/100P
Schottky Rectifier, 200 A
Vishay High Power Products
1000
1000
Reverse Current - I
R
(mA)
100
10
1
T
J
= 175°C
150°C
125°C
100°C
75°C
0.1
0.01
0.001
0
20
40
60
80
100
50°C
25°C
Tj = 175°C
Instantaneous Forward Current - I
F
(A)
100
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
10
Tj = 125°C
Junction Capacitance - C
T
(pF)
T
J
= 25°C
1000
Tj = 25°C
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Forward Voltage Drop - V
FM
(V)
100
0 10 20 30 40 50 60 70 80 90 100110
Reverse Voltage - V
R
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
Thermal Impedance Z
thJC
(°C/W)
D = 0.75
D = 0.5
D = 0.33
D = 0.25
D = 0.2
0.1
Single Pulse
(Thermal Resistance)
0.01
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94430
Revision: 23-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
VSKCS203/100P
Vishay High Power Products
Schottky Rectifier, 200 A
180
Allowable Case Temperature (°C)
Average Power Loss - (Watts)
120
Square wave (D=0.50)
80% rated Vr applied
160
140
120
100
80
60
40
20
0
0
50
100
see note (1)
100
80
60
40
20
0
180°
120°
90°
60°
30°
DC
RMS limit
DC
150
200
250
300
0
30
60
90
120
150
Average Forward Current - I
F
(AV)
(A)
Average Forward Current - I
F
(AV)
(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive Surge Current - I
FSM
(A)
100000
10000
1000
100
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+
V
d
= 25
V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
(1)
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94430
Revision: 23-Apr-08
VSKCS203/100P
Schottky Rectifier, 200 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
VS
1
KC
2
S
3
20
4
3
5
/
100
6
P
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay HPP
Circuit configuration:
KC = ADD-A-PAK - 2 diodes/common cathode
S = Schottky diode
Average rating (x 10)
Product silicon identification
Voltage rating (100 = 100 V)
Lead (Pb)-free
CIRCUIT CONFIGURATION
(1)
+
(2)
-
(3)
-
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95174
Document Number: 94430
Revision: 23-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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