Freescale Semiconductor
Technical Data
Document Number: MW7IC3825N
Rev. 1, 11/2010
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC3825N wideband integrated circuit is designed with on--chip
matching that makes it usable from 3400 -- 3600 MHz. This multi -- stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulation formats.
•
Typical WiMAX Performance: V
DD
= 28 Volts, I
DQ1
= 130 mA, I
DQ2
= 230 mA,
P
out
= 5 Watts Avg., f = 3600 MHz, OFDM 802.16d, 64 QAM
3
/
4
, 4 Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 25 dB
Power Added Efficiency — 15%
Device Output Signal PAR — 8.5 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --48 dBc in 1 MHz Channel Bandwidth
Driver Applications
•
Typical WiMAX Performance: V
DD
= 28 Volts, I
DQ1
= 190 mA, I
DQ2
= 230 mA,
P
out
= 0.5 Watts Avg., f = 3400 and 3600 MHz, OFDM 802.16d, 64 QAM
3
/
4
,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 23.5 dB
Power Added Efficiency — 3.5%
Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --55 dBc in 1 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 25 Watts CW
Output Power
•
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 0 to 44 dBm CW P
out
•
Typical P
out
@ 1 dB Compression Point
≃
30 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
On--Chip Matching (50 Ohm Input, RF Choke to Ground)
•
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
MW7IC3825NR1
MW7IC3825GNR1
MW7IC3825NBR1
3400-
-3600 MHz, 5 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886-
-01
TO-
-270 WB-
-16
PLASTIC
MW7IC3825NR1
CASE 1887-
-01
TO-
-270 WB-
-16 GULL
PLASTIC
MW7IC3825GNR1
CASE 1329-
-09
TO-
-272 WB-
-16
PLASTIC
MW7IC3825NBR1
V
DS1
RF
in
RF
out
/V
DS2
GND
V
DS1
V
GS2
V
GS1
NC
RF
in
NC
V
GS1
V
GS2
V
DS1
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
RF
out
/V
DS2
V
GS1
V
GS2
13
12
Quiescent Current
Temperature Compensation
(1)
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.Select Documentation/Application Notes -- AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DS
V
GS
V
DD
T
stg
T
C
T
J
P
in
Characteristic
Thermal Resistance, Junction to Case
WiMAX Application
(Case Temperature 71°C, P
out
= 5 W CW)
Stage 1, 28 Vdc, I
DQ1
= 130 mA
Stage 2, 28 Vdc, I
DQ2
= 230 mA
Symbol
R
θJC
4.7
1.3
Value
--0.5, +65
--6.0, +10
32, +0
-- 65 to +150
150
225
45
Value
(2,3)
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Stage 1 - Off Characteristics
-
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 1 - On Characteristics
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 25
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ1
= 130 mA)
Fixture Gate Quiescent Voltage
(4)
(V
DD
= 28 Vdc, I
DQ1
= 130 mA, Measured in Functional Test)
V
GS(th)
V
GS(Q)
V
GG(Q)
1.2
—
3.5
2
2.7
4.2
2.7
—
5
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. V
GG
= 1.55 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
(continued)
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Stage 2 - Off Characteristics
-
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 - On Characteristics
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 120
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ2
= 230 mA)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
DQ2
= 230 mA, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Stage 2 - Dynamic Characteristics
(2)
-
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
72.3
—
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
2.5
0.2
2
2.7
3.3
0.5
2.7
—
4
1.2
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 130 mA, I
DQ2
= 230 mA, P
out
= 5 W Avg.,
f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM
3
/
4
, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF. ACPR measured in 1 MHz Channel Bandwidth @
±8.5
MHz Offset.
Power Gain
Power Added Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
PAE
PAR
ACPR
IRL
21
12
7.5
—
—
25
15
8.5
--48
--12
32
—
—
--45
--6
dB
%
dB
dBc
dB
Typical Performances OFDM Signal - 10 MHz Channel Bandwidth
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
=
-
130 mA, I
DQ2
= 230 mA, P
out
= 5 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM
3
/
4
, 4 Bursts, 10 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Relative Constellation Error
(4)
Error Vector Magnitude
(4)
RCE
EVM
—
—
--33
2.2
—
—
dB
% rms
1. V
GG
= 1.22 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
4. RCE = 20Log(EVM/100).
(continued)
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 2 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 200 MHz Bandwidth @ P
out
= 5 W Avg.
Average Deviation from Linear Phase in 200 MHz Bandwidth
@ P
out
= 25 W CW
Average Group Delay @ P
out
= 25 W CW, f = 3500 MHz
Part--to--Part Insertion Phase Variation @ P
out
= 25 W CW,
f = 3500 MHz, Six Sigma Window
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
30
83
Max
—
—
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 130 mA, I
DQ2
= 230 mA, 3400--3600 MHz Bandwidth
VBW
res
G
F
Φ
Delay
∆Φ
∆G
∆P1dB
—
—
—
—
—
—
—
90
0.7
3.15
3.21
13.88
0.046
0.015
—
—
—
—
—
—
—
MHz
dB
°
ns
°
dB/°C
dB/°C
Typical Driver Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 190 mA, I
DQ2
= 230 mA, P
out
= 0.5 W Avg.,
f = 3400 MHz and f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM
3
/
4
, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @
0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @
±8.5
MHz Offset.
Power Gain
Power Added Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
PAE
PAR
ACPR
IRL
—
—
—
—
—
23.5
3.5
9.2
--55
--12
—
—
—
—
—
dB
%
dB
dBc
dB
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
4
RF Device Data
Freescale Semiconductor
V
D1
C1
RF
INPUT
C5
C6
Z1
Z2
Z4
Z3
Z6
Z5
Z8
Z7
Z10
Z9
Z12
Z11
C7
C17 Z13
NC
1
2
3
4
5
6
7
8
9
NC
V
GS2
V
GS1
NC
DUT
16
NC 15
14
C15
V
G1
V
G2
C16
R1
R2
C14
10 V
D1
11
Quiescent Current
Temperature
Compensation
NC 13
12
C13
C9
V
D2
+
Z42
Z41
C4
C3
C2
C12
Z26
Z25
Z14
Z40
Z15 Z16 Z17 Z18 Z19
Z43
Z20
Z21
Z23
Z22
Z24
Z28 Z29
Z27
C8
Z30
Z31
Z33
Z32
Z36
Z34
Z35
RF
Z37
OUTPUT
Z38 Z39
Z44
Z45
C11
R3
C10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Z15
Z16
0.118″ x 0.044″ Microstrip
0.205″ x 0.044″ Microstrip
0.083″ x 0.096″ Microstrip
0.195″ x 0.044″ Microstrip
0.094″ x 0.132″ Microstrip
0.509″ x 0.044″ Microstrip
0.083″ x 0.091″ Microstrip
0.372″ x 0.044″ Microstrip
0.078″ x 0.192″ Microstrip
0.078″ x 0.044″ Microstrip
0.079″ x 0.141″ Microstrip
0.243″ x 0.044″ Microstrip
0.605″ x 0.044″ Microstrip
0.232″ x 0.340″ Microstrip
0.042″ x 0.340″ Microstrip
0.112″ x 0.150″ Microstrip
Z17
Z18
Z19
Z20
Z21
Z22
Z23
Z24
Z25
Z26
Z27
Z28
Z29
Z30
Z31
0.230″ x 0.090″ Microstrip
0.125″ x 0.125″ Microstrip
0.228″ x 0.100″ Microstrip
0.076″ x 0.165″ Microstrip
0.289″ x 0.100″ Microstrip
0.083″ x 0.110″ Microstrip
0.375″ x 0.100″ Microstrip
0.185″ x 0.080″ Microstrip
0.079″ x 0.020″ Microstrip
0.185″ x 0.020″ Microstrip
0.185″ x 0.100″ Microstrip
0.093″ x 0.100″ Microstrip
0.063″ x 0.044″ Microstrip
0.103″ x 0.044″ Microstrip
0.080″ x 0.121″ Microstrip
Z32
Z33
Z34
Z35
Z36
Z37
Z38
Z39
Z40
Z41
Z42
Z43
Z44
Z45
PCB
0.080″ x 0.112″ Microstrip
0.193″ x 0.044″ Microstrip
0.080″ x 0.051″ Microstrip
0.157″ x 0.055″ Microstrip
0.080″ x 0.044″ Microstrip
0.080″ x 0.131″ Microstrip
0.040″ x 0.044″ Microstrip
0.073″ x 0.044″ Microstrip
0.574″ x 0.044″ Microstrip
L = 0.305″ wi = 0.150″ Angle = 130° Microstrip
0.523″ x 0.044″ Microstrip
0.574″ x 0.044″ Microstrip
L = 0.305″ wi = 0.150″ Angle = 130° Microstrip
0.523″ x 0.044″ Microstrip
Taconic TLX8--0300, 0.020″,
ε
r
= 2.55
Figure 3. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Schematic
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
5
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
