Freescale Semiconductor
Technical Data
Document Number: MHV5IC2215N
Rev. 3, 1/2007
RF LDMOS Wideband Integrated
Power Amplifier
The MHV5IC2215NR2 wideband integrated circuit is designed for base
station applications. It uses Freescale’s High Voltage (28 Volts) LDMOS IC
technology and integrates a two - stage structure. Its wideband on - chip
matching design makes it usable from 1500 to 2200 MHz. The linearity
performances cover all modulation formats for cellular applications including
TD - SCDMA.
Driver Application
•
Typical Single - Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ1
=
164 mA, I
DQ2
= 115 mA, P
out
= 23 dBm, Full Frequency Band (1930 -
1990 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through
13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain — 27.5 dB
ACPR @ 885 kHz Offset — - 60 dBc in 30 kHz Bandwidth
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ1
=
164 mA, I
DQ2
= 115 mA, P
out
= 23 dBm, Full Frequency Band (2130 -
2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 24 dB
ACPR @ 5 MHz Offset — - 55 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 15 Watts CW
Output Power
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
Features
•
On - Chip Matching (50 Ohm Input, >5 Ohm Output)
•
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
•
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
•
Integrated ESD Protection
•
RoHS Compliant
•
In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel
V
RD1
V
RG1
V
DS1
2 Stage IC
V
DS2
/RF
out
MHV5IC2215NR2
2170 MHz, 23 dBm, 28 V
SINGLE N - CDMA, SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
16
1
CASE 978 - 03
PFP - 16
N.C.
V
RD1
V
RG1
V
DS1
GND
RF
in
V
GS1
V
GS2
1
2
3
4
5
6
7
8
(Top View)
16
15
14
13
12
11
10
9
N.C.
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
N.C.
RF
in
V
GS1
V
GS2
Quiescent Current
Temperature Compensation
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
©
Freescale Semiconductor, Inc., 2007. All rights reserved.
MHV5IC2215NR2
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
Symbol
V
DSS
V
GS
T
stg
T
J
P
in
Value
- 0.5, +65
- 0.5, +12
- 65 to +150
150
12
Unit
Vdc
Vdc
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Driver Application
(P
out
= 23 dBm CW)
Stage 1, 28 Vdc, I
DQ1
= 164 mA
Stage 2, 28 Vdc, I
DQ2
= 115 mA
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Symbol
R
θJC
9.3
3.5
Value
(1)
Unit
°C/W
Table 3. ESD Protection Characteristics
Class
0 (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
W - CDMA Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 164 mA, I
DQ2
= 115 mA, P
out
= 23 dBm,
f = 2140 MHz, Single - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz
Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gain Flatness in 60 MHz Bandwidth @ P
out
= 23 dBm
f = 2110 - 2170 MHz
Adjacent Channel Power Ratio
Input Return Loss
G
ps
G
F
ACPR
IRL
23
—
—
—
24
0.3
- 56
- 12
27
0.5
- 54
- 10
dB
dB
dBc
dB
Typical N - CDMA Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 164 mA, I
DQ2
= 115 mA, P
out
= 23 dBm,
f = 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth
@
±885
kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
Gain Flatness @ P
out
= 23 dBm
Adjacent Channel Power Ratio
Input Return Loss
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 23 dBm
Average Group Delay @ P
out
= 23 dBm Including Output Matching
f = 1930 - 1990 MHz
G
ps
G
F
ACPR
IRL
Φ
Delay
25.5
—
—
—
—
—
27.5
0.3
- 60
- 12
0.2
1.5
29
—
—
—
—
—
dB
dB
dBc
dB
°
ns
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MHV5IC2215NR2
2
RF Device Data
Freescale Semiconductor
W - CDMA DRIVER APPLICATION
1
V
RD1
V
RG1
Z12
V
DS1
+
C5
+
4
C4
5
Z1
C1
V
GS1
R1
V
GS2
R2
C3
C2
8
7
Z2
Z3
Z4
6
2
3
NC
NC
16
Z13
15
C8
14
13
Z5
12
C11
11
10
C9
Z6
C10
Z7
Z8
Z9
Z10
Z11
+
C7
+
V
DS2
C6
RF
OUTPUT
RF
INPUT
Quiescent Current
Temperature Compensation
NC
9
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.045″ x 0.1289″ Microstrip
0.0443″ x 0.0161″ Microstrip
0.0308″ x 0.0416″ x 0.03″ Taper
0.0161″ x 0.0685″ Microstrip
0.0838″ x 0.1759″ Microstrip
0.0503″ x 0.1759″ Microstrip
0.0922″ x 0.1759″ Microstrip
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.0105″ x 0.1200″ Microstrip
0.0559″ x 0.1145″ Microstrip
0.045″ x 0.2671″ Microstrip
0.3319″ x 0.0349″ Microstrip
0.0027″ x 2.0413″ Microstrip
0.9151″ x 0.0349″ Microstrip
Rogers 4350, 0.020″,
ε
r
= 3.5
Figure 3. MHV5IC2215NR2 Test Circuit Schematic
Table 6. MHV5IC2215NR2 Test Circuit Component Designations and Values
Part
C1
C2, C3
C4, C7
C5, C6
C8
C9, C10
C11
R1, R2
Description
22 pF, 50 V Chip Capacitor
6.8 pF, 50 V Chip Capacitors
1
μF,
35 V Tantalum Chip Capacitors
330
μF,
50 V Electrolytic Chip Capacitors
0.01
μF,
50 V Chip Capacitor
2.7 pF, 50 V Chip Capacitors
15 pF, 25 V Chip Capacitor
1 kW, 1/8 W Chip Resistors
Part Number
06033J220GBS
06035J6R8BBS
TAJA105K035R
MCR35V337M10X16
0805C103K5RACTR
06035J2R7BBS
06033J150GBS
CRCW08051000FKTA
Manufacturer
AVX
AVX
AVX
Multicomp
Kemet
AVX
AVX
Vishay
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
3
W - CDMA DRIVER APPLICATION
C5
C6
C4
V
D1
V
D2
C7
C8
C1
C9
C10
C2
C11
C3
R2
V
G2
R1
V
G1
MHV5IC2215, Rev. 1
Figure 4. MHV5IC2215NR2 Test Circuit Component Layout
MHV5IC2215NR2
4
RF Device Data
Freescale Semiconductor
TYPICAL W - CDMA DRIVER APPLICATION CHARACTERISTICS
PAE,
POWER ADDED EFFICIENCY (%), G
ps
, POWER GAIN (dB)
33
30
27
24
21
18
15
12
9
6
3
0
0.1
IM3
PAE
1
P
out
, OUTPUT POWER (WATTS) AVG.
10
V
DD
= 28 Vdc, I
DQ1
= 164 mA, I
DQ2
= 115 mA
f1 = 2135 MHz, f2 = 2145 MHz, 2 x W−CDMA
10 MHz in 3.84 MHz Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
G
ps
0
−6
−12
−24
−30
−36
ACPR
−42
−48
−54
−60
−66
IM3 (dBc), ACPR (dBc)
−18
Figure 5. 2 - Carrier W - CDMA ACPR, IM3, Power
Gain and Power Added Efficiency
versus Output Power
50
28
T
C
= −30_C
26
G
ps
, POWER GAIN (dB)
G
ps
25_C
24
85_C
22
V
DD
= 28 Vdc
I
DQ1
= 164 mA
I
DQ2
= 115 mA
f = 2140 MHz
PAE
25_C
85_C
−30_C
26
PAE, POWER ADDED EFFICIENCY (%)
25
G
ps
, POWER GAIN (dB)
24
23
22
21
20
19
0
2
4
6
8
10
12
14
P
out
, OUTPUT POWER (WATTS) CW
32 V
V
DD
= 24 V
28 V
I
DQ1
= 164 mA
I
DQ2
= 115 mA
f = 2140 MHz
40
30
20
20
18
0.1
10
0
1
10
30
P
out
, OUTPUT POWER (WATTS) CW
Figure 6. Power Gain and Power Added
Efficiency versus Output Power
28
21
14
S21 (dB)
7
0
−7
S11
−14
V
DD
= 28 Vdc, P
out
= 23 dBm CW
I
DQ1
= 164 mA, I
DQ2
= 115 mA
1500
2000
f, FREQUENCY (MHz)
2500
−14
−16
3000
S21
−2
−4
−6
S11 (dB)
−8
−10
−12
G
ps
, POWER GAIN (dB)
30
28
26
24
Figure 7. Power Gain versus Output Power
T
C
= −30_C
25_C
85_C
22
20
V
DD
= 28 Vdc, P
out
= 23 dBm CW
I
DQ1
= 164 mA, I
DQ2
= 115 mA
Two −Tone Measurements, Center Frequency = 2140 MHz
1950
2000
2050
2100
2150
2200
2250
2300
−21
1000
18
1900
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
Figure 9. Power Gain versus Frequency
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
5
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