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IS61VF204836B-6.5M3LI

产品描述Cache SRAM, 2MX36, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, LEAD FREE, PLASTIC, LFBGA-165
产品类别存储    存储   
文件大小3MB,共35页
制造商ISSI(芯成半导体)
官网地址http://www.issi.com/
标准
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IS61VF204836B-6.5M3LI概述

Cache SRAM, 2MX36, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, LEAD FREE, PLASTIC, LFBGA-165

IS61VF204836B-6.5M3LI规格参数

参数名称属性值
是否Rohs认证符合
Objectid1252098645
零件包装代码BGA
包装说明LBGA, BGA165,11X15,40
针数165
Reach Compliance Codecompliant
Country Of OriginMainland China, Taiwan
ECCN代码3A991.B.2.A
YTEOL6.8
最长访问时间6.5 ns
最大时钟频率 (fCLK)133 MHz
I/O 类型COMMON
JESD-30 代码R-PBGA-B165
长度17 mm
内存密度75497472 bit
内存集成电路类型CACHE SRAM
内存宽度36
功能数量1
端子数量165
字数2097152 words
字数代码2000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织2MX36
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装等效代码BGA165,11X15,40
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
电源2.5 V
认证状态Not Qualified
座面最大高度1.4 mm
最小待机电流2.38 V
最大供电电压 (Vsup)2.625 V
最小供电电压 (Vsup)2.375 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式BALL
端子节距1 mm
端子位置BOTTOM
宽度15 mm

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IS61LF204836B, IS61VF/VVF204836B
IS61LF409618B, IS61VF/VVF409618B
2M x 36, 4M x 18
72 Mb SYNCHRONOUS
FLOW-THROUGH
STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input
• Three chip enable option for simple depth expan-
sion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
• Power Supply
LF: V
dd
3.3V (+ 5%),
V
ddq
3.3V/2.5V (+ 5%)
VF: V
dd
2.5V (+ 5%),
V
ddq
2.5V (+ 5%)
VVF: V
dd
1.8V (+ 5%),
V
ddq
1.8V (+ 5%)
• JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-
pin PBGA packages
• Lead-free available
JUNE
2015
DESCRIPTION
The 72Mb product family features high-speed, low-power
synchronous static
RAMs
designed to provide burstable,
high-performance memory for communication and network-
ing applications. The
IS61LF/VF204836B is organized as
2,096,952 words by 36 bits. The IS61LF/VF409618B
is
organized as 4,193,904 words by 18 bits. Fabricated with
ISSI
's advanced CMOS technology, the device integrates
a 2-bit burst counter, high-speed SRAM core, and high-
drive capability outputs into a single monolithic circuit. All
synchronous inputs pass through registers controlled by
a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be one to
four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be writ-
ten. Byte write operation is performed by using byte write
enable (BWE)
input combined with one or more individual
byte write signals (BWx). In addition, Global Write (GW)
is available for writing all bytes at one time, regardless of
the byte write controls.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be gener-
ated internally and controlled by the
ADV
(burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW. Inter-
leave burst is achieved when this pin is tied HIGH or left
floating.
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
-6.5
6.5
7.5
133
-7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev.C
06/10/2015
1
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