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5962F9563003VYC

产品描述16-CHANNEL, SGL ENDED MULTIPLEXER, CDFP28, CERAMIC, FLATPACK-28
产品类别模拟混合信号IC    信号电路   
文件大小410KB,共7页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
标准
下载文档 详细参数 选型对比 全文预览

5962F9563003VYC概述

16-CHANNEL, SGL ENDED MULTIPLEXER, CDFP28, CERAMIC, FLATPACK-28

5962F9563003VYC规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Renesas(瑞萨电子)
零件包装代码DFP
包装说明DFP, FL28,.5
针数28
Reach Compliance Codecompliant
模拟集成电路 - 其他类型SINGLE-ENDED MULTIPLEXER
JESD-30 代码R-CDFP-F28
JESD-609代码e4
负电源电压最大值(Vsup)-16 V
负电源电压最小值(Vsup)-15 V
标称负供电电压 (Vsup)-15.5 V
信道数量16
功能数量1
端子数量28
标称断态隔离度45 dB
最大通态电阻 (Ron)3000 Ω
最高工作温度125 °C
最低工作温度-55 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码DFP
封装等效代码FL28,.5
封装形状RECTANGULAR
封装形式FLATPACK
峰值回流温度(摄氏度)NOT SPECIFIED
电源+-12 V
认证状态Not Qualified
筛选级别MIL-PRF-38535 Class Q
座面最大高度2.92 mm
最大供电电流 (Isup)0.5 mA
最大供电电压 (Vsup)16 V
最小供电电压 (Vsup)15 V
标称供电电压 (Vsup)15.5 V
表面贴装YES
最长断开时间1500 ns
最长接通时间1500 ns
切换BREAK-BEFORE-MAKE
技术CMOS
温度等级MILITARY
端子面层Gold (Au)
端子形式FLAT
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
总剂量300k Rad(Si) V
宽度12.445 mm
Base Number Matches1

5962F9563003VYC相似产品对比

5962F9563003VYC 5962F9563003QYC 5962F9563004V9A 5962F9563004VXC 5962F9563004VYC 5962F9563003V9A 5962F9563003VXC 5962F9563003QXC HS0-1840BRH-Q 5962F9563005VXC
描述 16-CHANNEL, SGL ENDED MULTIPLEXER, CDFP28, CERAMIC, FLATPACK-28 16-CHANNEL, SGL ENDED MULTIPLEXER, CDFP28, CERAMIC, FLATPACK-28 16-CHANNEL, SGL ENDED MULTIPLEXER, UUC26, DIE-26 16-CHANNEL, SGL ENDED MULTIPLEXER, CDIP28, CERAMIC, SIDE BRAZED, DIP-28 16-CHANNEL, SGL ENDED MULTIPLEXER, CDFP28, CERAMIC, FLATPACK-28 16-CHANNEL, SGL ENDED MULTIPLEXER, UUC26, DIE-26 16-CHANNEL, SGL ENDED MULTIPLEXER, CDIP28, CERAMIC, SIDE BRAZED, DIP-28 16-CHANNEL, SGL ENDED MULTIPLEXER, CDIP28, CERAMIC, SIDE BRAZED, DIP-28 16-CHANNEL, SGL ENDED MULTIPLEXER, UUC26, DIE-26 SGL ENDED MULTIPLEXER
厂商名称 Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子)
包装说明 DFP, FL28,.5 DFP, FL28,.5 DIE, DIE OR CHIP DIP, DIP28,.6 DFP, FL28,.5 DIE, DIE OR CHIP DIP, DIP28,.6 DIP, DIP28,.6 DIE, DIP,
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant compliant
模拟集成电路 - 其他类型 SINGLE-ENDED MULTIPLEXER SINGLE-ENDED MULTIPLEXER SINGLE-ENDED MULTIPLEXER SINGLE-ENDED MULTIPLEXER SINGLE-ENDED MULTIPLEXER SINGLE-ENDED MULTIPLEXER SINGLE-ENDED MULTIPLEXER SINGLE-ENDED MULTIPLEXER SINGLE-ENDED MULTIPLEXER SINGLE-ENDED MULTIPLEXER
JESD-30 代码 R-CDFP-F28 R-CDFP-F28 R-XUUC-N26 R-CDIP-T28 R-CDFP-F28 R-XUUC-N26 R-CDIP-T28 R-CDIP-T28 R-XUUC-N26 R-CDIP-T28
信道数量 16 16 16 16 16 16 16 16 16 16
功能数量 1 1 1 1 1 1 1 1 1 1
端子数量 28 28 26 28 28 26 28 28 26 28
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED
封装代码 DFP DFP DIE DIP DFP DIE DIP DIP DIE DIP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK FLATPACK UNCASED CHIP IN-LINE FLATPACK UNCASED CHIP IN-LINE IN-LINE UNCASED CHIP IN-LINE
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES NO YES YES NO NO YES NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS BICMOS
温度等级 MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
端子形式 FLAT FLAT NO LEAD THROUGH-HOLE FLAT NO LEAD THROUGH-HOLE THROUGH-HOLE NO LEAD THROUGH-HOLE
端子位置 DUAL DUAL UPPER DUAL DUAL UPPER DUAL DUAL UPPER DUAL
是否Rohs认证 符合 符合 - 符合 符合 - 符合 符合 符合 -
零件包装代码 DFP DFP DIE DIP DFP DIE DIP DIP DIE -
针数 28 28 26 28 28 26 28 28 26 -
负电源电压最大值(Vsup) -16 V -16 V -16 V -16 V -16 V -16 V -16 V -16 V -16 V -
负电源电压最小值(Vsup) -15 V -15 V -15 V -15 V -15 V -15 V -15 V -15 V -15 V -
标称负供电电压 (Vsup) -15.5 V -15.5 V -15.5 V -15.5 V -15.5 V -15.5 V -15.5 V -15.5 V -15.5 V -
最大通态电阻 (Ron) 3000 Ω 3000 Ω 3000 Ω 3000 Ω 3000 Ω 3000 Ω 3000 Ω 3000 Ω - -
封装等效代码 FL28,.5 FL28,.5 DIE OR CHIP DIP28,.6 FL28,.5 DIE OR CHIP DIP28,.6 DIP28,.6 - -
电源 +-12 V +-12 V +-15 V +-15 V +-15 V +-12 V +-12 V +-12 V - -
筛选级别 MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q - MIL-PRF-38535 Class V
座面最大高度 2.92 mm 2.92 mm - 5.92 mm 2.92 mm - 5.92 mm 5.92 mm - 5.92 mm
最大供电电流 (Isup) 0.5 mA 0.5 mA 0.5 mA 0.5 mA 0.5 mA 0.5 mA 0.5 mA 0.5 mA - -
最大供电电压 (Vsup) 16 V 16 V 16 V 16 V 16 V 16 V 16 V 16 V 16 V -
最小供电电压 (Vsup) 15 V 15 V 15 V 15 V 15 V 15 V 15 V 15 V 15 V -
标称供电电压 (Vsup) 15.5 V 15.5 V 15.5 V 15.5 V 15.5 V 15.5 V 15.5 V 15.5 V 15.5 V -
最长接通时间 1500 ns 1500 ns 1500 ns 1500 ns 1500 ns 1500 ns 1500 ns 1500 ns - -
切换 BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE - -
端子节距 1.27 mm 1.27 mm - 2.54 mm 1.27 mm - 2.54 mm 2.54 mm - 2.54 mm
总剂量 300k Rad(Si) V 300k Rad(Si) V 300k Rad(Si) V 300k Rad(Si) V 300k Rad(Si) V 300k Rad(Si) V 300k Rad(Si) V 300k Rad(Si) V - 300k Rad(Si) V
宽度 12.445 mm 12.445 mm - 15.24 mm - - 15.24 mm 15.24 mm - 15.24 mm
Base Number Matches 1 1 1 1 1 1 1 1 - -

 
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