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Datasheet> 器件分类 > 模拟混合信号IC> 信号电路> 5962F9563003VXC

5962F9563003VXC: 产品描述16-CHANNEL, SGL ENDED MULTIPLEXER, CDIP28, CERAMIC, SIDE BRAZED, DIP-28; 产品类别模拟混合信号IC 信号电路; 文件大小410KB，共7页; 制造商Renesas(瑞萨电子); 官网地址https://www.renesas.com/; 标准

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5962F9563003VXC概述

16-CHANNEL, SGL ENDED MULTIPLEXER, CDIP28, CERAMIC, SIDE BRAZED, DIP-28

5962F9563003VXC规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Renesas(瑞萨电子)
零件包装代码	DIP
包装说明	DIP, DIP28,.6
针数	28
Reach Compliance Code	compliant
模拟集成电路 - 其他类型	SINGLE-ENDED MULTIPLEXER
JESD-30 代码	R-CDIP-T28
JESD-609代码	e4
负电源电压最大值（Vsup）	-16 V
负电源电压最小值（Vsup）	-15 V
标称负供电电压 (Vsup)	-15.5 V
信道数量	16
功能数量	1
端子数量	28
标称断态隔离度	45 dB
最大通态电阻 (Ron)	3000 Ω
最高工作温度	125 °C
最低工作温度	-55 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	DIP
封装等效代码	DIP28,.6
封装形状	RECTANGULAR
封装形式	IN-LINE
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	+-12 V
认证状态	Not Qualified
筛选级别	MIL-PRF-38535 Class Q
座面最大高度	5.92 mm
最大供电电流 (Isup)	0.5 mA
最大供电电压 (Vsup)	16 V
最小供电电压 (Vsup)	15 V
标称供电电压 (Vsup)	15.5 V
表面贴装	NO
最长断开时间	1500 ns
最长接通时间	1500 ns
切换	BREAK-BEFORE-MAKE
技术	CMOS
温度等级	MILITARY
端子面层	Gold (Au)
端子形式	THROUGH-HOLE
端子节距	2.54 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
总剂量	300k Rad(Si) V
宽度	15.24 mm
Base Number Matches	1

5962F9563003VXC相似产品对比

	5962F9563003VXC	5962F9563003VYC	5962F9563003QYC	5962F9563004V9A	5962F9563004VXC	5962F9563004VYC	5962F9563003V9A	5962F9563003QXC	HS0-1840BRH-Q	5962F9563005VXC
描述	16-CHANNEL, SGL ENDED MULTIPLEXER, CDIP28, CERAMIC, SIDE BRAZED, DIP-28	16-CHANNEL, SGL ENDED MULTIPLEXER, CDFP28, CERAMIC, FLATPACK-28	16-CHANNEL, SGL ENDED MULTIPLEXER, CDFP28, CERAMIC, FLATPACK-28	16-CHANNEL, SGL ENDED MULTIPLEXER, UUC26, DIE-26	16-CHANNEL, SGL ENDED MULTIPLEXER, CDIP28, CERAMIC, SIDE BRAZED, DIP-28	16-CHANNEL, SGL ENDED MULTIPLEXER, CDFP28, CERAMIC, FLATPACK-28	16-CHANNEL, SGL ENDED MULTIPLEXER, UUC26, DIE-26	16-CHANNEL, SGL ENDED MULTIPLEXER, CDIP28, CERAMIC, SIDE BRAZED, DIP-28	16-CHANNEL, SGL ENDED MULTIPLEXER, UUC26, DIE-26	SGL ENDED MULTIPLEXER
厂商名称	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)
包装说明	DIP, DIP28,.6	DFP, FL28,.5	DFP, FL28,.5	DIE, DIE OR CHIP	DIP, DIP28,.6	DFP, FL28,.5	DIE, DIE OR CHIP	DIP, DIP28,.6	DIE,	DIP,
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
模拟集成电路 - 其他类型	SINGLE-ENDED MULTIPLEXER	SINGLE-ENDED MULTIPLEXER	SINGLE-ENDED MULTIPLEXER	SINGLE-ENDED MULTIPLEXER	SINGLE-ENDED MULTIPLEXER	SINGLE-ENDED MULTIPLEXER	SINGLE-ENDED MULTIPLEXER	SINGLE-ENDED MULTIPLEXER	SINGLE-ENDED MULTIPLEXER	SINGLE-ENDED MULTIPLEXER
JESD-30 代码	R-CDIP-T28	R-CDFP-F28	R-CDFP-F28	R-XUUC-N26	R-CDIP-T28	R-CDFP-F28	R-XUUC-N26	R-CDIP-T28	R-XUUC-N26	R-CDIP-T28
信道数量	16	16	16	16	16	16	16	16	16	16
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	28	28	28	26	28	28	26	28	26	28
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED
封装代码	DIP	DFP	DFP	DIE	DIP	DFP	DIE	DIP	DIE	DIP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	FLATPACK	FLATPACK	UNCASED CHIP	IN-LINE	FLATPACK	UNCASED CHIP	IN-LINE	UNCASED CHIP	IN-LINE
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	YES	YES	YES	NO	YES	YES	NO	YES	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	BICMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子形式	THROUGH-HOLE	FLAT	FLAT	NO LEAD	THROUGH-HOLE	FLAT	NO LEAD	THROUGH-HOLE	NO LEAD	THROUGH-HOLE
端子位置	DUAL	DUAL	DUAL	UPPER	DUAL	DUAL	UPPER	DUAL	UPPER	DUAL
是否Rohs认证	符合	符合	符合	-	符合	符合	-	符合	符合	-
零件包装代码	DIP	DFP	DFP	DIE	DIP	DFP	DIE	DIP	DIE	-
针数	28	28	28	26	28	28	26	28	26	-
负电源电压最大值（Vsup）	-16 V	-16 V	-16 V	-16 V	-16 V	-16 V	-16 V	-16 V	-16 V	-
负电源电压最小值（Vsup）	-15 V	-15 V	-15 V	-15 V	-15 V	-15 V	-15 V	-15 V	-15 V	-
标称负供电电压 (Vsup)	-15.5 V	-15.5 V	-15.5 V	-15.5 V	-15.5 V	-15.5 V	-15.5 V	-15.5 V	-15.5 V	-
最大通态电阻 (Ron)	3000 Ω	3000 Ω	3000 Ω	3000 Ω	3000 Ω	3000 Ω	3000 Ω	3000 Ω	-	-
封装等效代码	DIP28,.6	FL28,.5	FL28,.5	DIE OR CHIP	DIP28,.6	FL28,.5	DIE OR CHIP	DIP28,.6	-	-
电源	+-12 V	+-12 V	+-12 V	+-15 V	+-15 V	+-15 V	+-12 V	+-12 V	-	-
筛选级别	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	-	MIL-PRF-38535 Class V
座面最大高度	5.92 mm	2.92 mm	2.92 mm	-	5.92 mm	2.92 mm	-	5.92 mm	-	5.92 mm
最大供电电流 (Isup)	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA	-	-
最大供电电压 (Vsup)	16 V	16 V	16 V	16 V	16 V	16 V	16 V	16 V	16 V	-
最小供电电压 (Vsup)	15 V	15 V	15 V	15 V	15 V	15 V	15 V	15 V	15 V	-
标称供电电压 (Vsup)	15.5 V	15.5 V	15.5 V	15.5 V	15.5 V	15.5 V	15.5 V	15.5 V	15.5 V	-
最长接通时间	1500 ns	1500 ns	1500 ns	1500 ns	1500 ns	1500 ns	1500 ns	1500 ns	-	-
切换	BREAK-BEFORE-MAKE	BREAK-BEFORE-MAKE	BREAK-BEFORE-MAKE	BREAK-BEFORE-MAKE	BREAK-BEFORE-MAKE	BREAK-BEFORE-MAKE	BREAK-BEFORE-MAKE	BREAK-BEFORE-MAKE	-	-
端子节距	2.54 mm	1.27 mm	1.27 mm	-	2.54 mm	1.27 mm	-	2.54 mm	-	2.54 mm
总剂量	300k Rad(Si) V	300k Rad(Si) V	300k Rad(Si) V	300k Rad(Si) V	300k Rad(Si) V	300k Rad(Si) V	300k Rad(Si) V	300k Rad(Si) V	-	300k Rad(Si) V
宽度	15.24 mm	12.445 mm	12.445 mm	-	15.24 mm	-	-	15.24 mm	-	15.24 mm
Base Number Matches	1	1	1	1	1	1	1	1	-	-

5962F9563003VXC

5962F9563003VXC概述

5962F9563003VXC规格参数

5962F9563003VXC相似产品对比

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