KMT32B Magnetic Angle Sensor
AMR Sensor with 180° period
high accuracy
high resolution
for the use at moderate field strengths
tiny TDFN package
ROHS & REACH compliant
TDFN
DESCRIPTION
SO8
The KMT32B is a magnetic field sensor based on the anisotropic magneto resistance effect, i.e. it is sensing
the
magnetic field direction
independently on the magnetic field strength for applied field strengths
H>25 kA/m. The sensor contains two parallel supplied Wheatstone bridges, which enclose a sensitive angle
of 45 degrees.
A rotating magnetic field in the surface parallel to the chip (x-y plane) will therefore deliver two independent
sinusoidal output signals, one following a cos(2) and the second following a sin(2) function,
being the
angle between sensor and field direction (see Figure 2).
The KMT32B magnetic field sensor is suited for high precision angle measurement applications at a regular
field strength of H
0
≥ 25 kA/m (generated for example with magnet 67.044 from Magnetfabrik Bonn at a
distance of 5.2 mm at room temperature). With reduced accuracy, the sensor KMT32B may be used with a
field strength of H
0
≥ 14 kA/m (at room temperature; be aware of the influence of the earth magnetic field!).
Most magnets show a decreasing field strength with temperature while the magnetic field direction is
unchanged.
FEATURES
Contactless angular position, ideal for harsh
environments
Design optimized for linearity
High accuracy
Low cost, low power
Self diagnosis feature
Attractive SMD packages
User has complete control over signal
evaluation
Extended operating temperature range
(-40 °C to +150 °C, +160°C on request)
REACH & RoHS compliant (lead free)
APPLICATIONS
Absolute and incremental angle measurement
Automotive (steering angle, torque)
Robotics
Camera positioning
Potentiometer replacement
Position measurement in medical applications
Motor motion control
KMT32B Rev 6
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1/6
2013-July
KMT32B Magnetic Angle Sensor
CHARACTERISTIC VALUES
Parameter
A. Operating Limits
Max. supply voltage
Max. current (single bridge)
Operating temperature
Storage temperature
Supply voltage
Resistance (single bridge)
Output signal amplitude
Offset voltage
Angular inaccuracy
Angular hysteresis
C. Sensor Specifications
TC of amplitude
TC of resistance
TC of offset
Symbol
Condition
Min
Typ
Max
Unit
Vcc
,max
Icc
,max
T
op
T
st
Vcc
R
b
V
PEAK
V
OFF
H
TCSV
TCBR
TCVoff
Condition A, B
Condition A, B
Condition A, B
Condition A, B
Condition A, C
Condition A, C
Condition A, C
10
4
-40
-40
5
2400
9
-1
3000
11
0
0.05
3600
13
+1
0.2
0.1
-0.36
+0.27
-4
-0.32
+0.32
0
-0.28
+0.37
+4
+150
+150
V
mA
C
C
V
mV/V
mV/V
deg
deg
%/K
%/K
µV/V/K
B. Sensor Specifications (T=25 °C)
Stress above one or more of the limiting values may cause permanent damage to the device. Exposure to
limiting values for extended periods may affect device reliability.
MEASUREMENT CONDITIONS
Parameter
Symbol
Unit
Condition
Condition A:
Set Up Conditions
Ambient temperature
Supply voltage
Applied magnetic field
T
Vcc
H
°C
V
kA/m
T = 25 °C (unless otherwise noted)
Vcc = 5 V
H = 25 kA/m
Condition B:
Sensor Specifications (360° turn , Vo
max
>0, Vo
min
<0)
Output signal amplitude
Offset voltage
Angular inaccuracy
V
PEAK
V
OFF
mV/V
mV/V
deg
V
PEAK
= (Vo
max
- Vo
min
)/2/Vcc
V
OFF
= (Vo
max
+ Vo
min
)/Vcc
½
MAX|
0
-
|;
max. angular difference between actual field
angle
0
and measured angle due to deviations from ideal
sinusoidal characteristics, calculated from the third and fifth
harmonics of the Fourier spectrum; offset voltage error
contributions not included
Angular hysteresis
H
deg
H
= |
left turn
-
right turn
|
angular difference between left and right turn
KMT32B Rev 6
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2/6
2013-July
KMT32B Magnetic Angle Sensor
MEASUREMENT CONDITIONS
Parameter
Symbol
Unit
Condition
Condition C:
Sensor Specifications (-25°C, +125°C)
Ambient temperatures
TC of amplitude
T
TCSV
°C
%/K
T
1
= -25 °C,
T
0
= +25 °C, T
2
= +125 °C
Vn
Vn
(
T
2
)
(
T
1
)
1
Vcc
Vcc
TCV
½
100%
Vn
(
T
2
T
1
)
(
T
1
)
Vcc
TC of resistance
TCBR
%/K
TCR
½
R
(
T
2
)
R
(
T
1
)
1
100%
(
T
2
T
1
)
R
(
T
1
)
Voff
(
T
2
)
Voff
(
T
1
)
(
T
2
T
1
)
TC of offset
TCVoff
(µV/V)/
K
TCVoff
½
BLOCK DIAGRAM
Figure 1:
Circuit Diagram
TYPICAL PERFORMANCE CURVES
15
10
direction of
magnetic field
5
[mV/V]
X
Δ
Vn/Vcc
0
0
-5
45
90
135
180
225
270
315
360
KMT
32B
-10
Y
-15
α [deg]
V1 (cos)
V2 (sin)
Figure 2:
Characteristic curves for KMT32B (SO8, TDFN)
KMT32B Rev 6
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3/6
2013-July
KMT32B Magnetic Angle Sensor
PACKAGES
SO8
TDFN 2.5*2.5
unit: mm
RECOMMENDED SOLDER PAD LAYOUT FOR TDFN
KMT32B Rev 6
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4/6
2013-July
KMT32B Magnetic Angle Sensor
PIN ASSIGNMENT (SO8, TDFN)
Pin
(SO8)
1
2
3
4
5
6
7
8
Pin
(TDFN)
7
8
1
2
3
4
5
6
Symbol
-V
o1
-V
o2
V
cc2
V
cc1
+V
o1
+V
o2
GND
2
GND
1
Function
negative output bridge 1
negative output bridge 2
positive supply voltage bridge 2
positive supply voltage bridge 1
positive output bridge 1
positive output bridge 2
negative supply voltage bridge 2
negative supply voltage bridge 1
SOLDER PROFILE
Recommended solder reflow process according to IPC/JEDEC J-STD-020D (Pb-Free Process)
TAPE AND REEL PACKAGING INFORMATION
Description
KMT32B/TD
Reel size
7”
Units/reel
3,000
Pin 1 orientation
Top-right of
sprocket hole side
Top-left of sprocket
hole side
Note
KMT32B/SO
13”
2,500
KMT32B Rev 6
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5/6
2013-July