ON Semiconductort
Amplifier Transistors
COLLECTOR 3
2
BASE
COLLECTOR 3
2
BASE
1 EMITTER
1 EMITTER
NPN
MPS6521*
PNP
MPS6523
Voltage and current are negative
for PNP transistors
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
MPS6521
MPS6523
Collector–Base Voltage
MPS6521
MPS6523
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
V
CBO
40
—
4.0
100
625
5.0
1.5
12
–55 to +150
—
25
Vdc
Symbol
V
CEO
25
—
—
25
Vdc
NPN
PNP
Unit
Vdc
*ON Semiconductor Preferred Device
1
mAdc
mW
mW/°C
Watts
mW/°C
°C
2
3
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
(Printed Circuit Board Mounting)
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 0.5 mAdc, I
B
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
(V
CB
= 20 Vdc, I
E
= 0)
MPS6521
MPS6523
V
(BR)CEO
V
(BR)EBO
I
CBO
—
—
0.05
0.05
25
4.0
—
—
Vdc
Vdc
mAdc
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2001
826
March, 2001 – Rev. 1
Publication Order Number:
MPS6521/D
NPN MPS6521 PNP MPS6523
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100
mAdc,
V
CE
= 10 Vdc)
(I
C
= 2.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 100
mAdc,
V
CE
= 10 Vdc)
(I
C
= 2.0 mAdc, V
CE
= 10 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
h
FE
MPS6521
MPS6521
MPS6523
MPS6523
V
CE(sat)
150
300
150
300
—
—
600
—
600
0.5
Vdc
—
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Noise Figure
(I
C
= 10
mAdc,
V
CE
= 5.0 Vdc, R
S
= 10 k
Ω,
Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz)
C
obo
NF
—
—
3.5
3.0
pF
dB
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827
NPN MPS6521 PNP MPS6523
NPN
MPS6521
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+3.0 V
300 ns
DUTY CYCLE = 2%
-0.5 V
<1.0 ns
+10.9 V
275
10 k
10 < t
1
< 500
µs
DUTY CYCLE = 2%
0
t
1
+3.0 V
+10.9 V
10 k
1N916
C
S
< 4.0 pF*
275
C
S
< 4.0 pF*
-9.1 V
<1.0 ns
*Total shunt capacitance of test jig and connectors
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
20
I
C
= 1.0 mA
300
µA
100
BANDWIDTH = 1.0 Hz
R
S
= 0
In, NOISE CURRENT (pA)
50
20
10
5.0
2.0
1.0
0.5
0.2
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
0.1
10
20
50
30
µA
10
µA
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
I
C
= 1.0 mA
300
µA
100
µA
BANDWIDTH = 1.0 Hz
R
S
≈ ∞
en, NOISE VOLTAGE (nV)
10
7.0
5.0
10
µA
100
µA
3.0
2.0
30
µA
Figure 3. Noise Voltage
Figure 4. Noise Current
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828
NPN MPS6521 PNP MPS6523
NPN
MPS6521
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
500 k
RS , SOURCE RESISTANCE (OHMS)
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
50
2.0 dB
3.0 dB 4.0 dB
6.0 dB
10 dB
BANDWIDTH = 1.0 Hz
1M
500 k
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
RS , SOURCE RESISTANCE (OHMS)
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (µA)
500 700
1k
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (µA)
500 700
1k
Figure 5. Narrow Band, 100 Hz
Figure 6. Narrow Band, 1.0 kHz
500 k
RS , SOURCE RESISTANCE (OHMS)
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
50
1.0 dB
10 Hz to 15.7 kHz
Noise Figure is defined as:
NF
+
20 log10
2.0 dB
5.0 dB
8.0 dB
10
20
30
50 70 100
200 300
500 700
1k
e
n
I
n
K
T
R
S
en2
)
4KTRS
)
In 2RS2 1 2
4KTRS
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10
–23
j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
3.0 dB
I
C
, COLLECTOR CURRENT (µA)
Figure 7. Wideband
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829
NPN MPS6521 PNP MPS6523
NPN
MPS6521
TYPICAL STATIC CHARACTERISTICS
400
T
J
= 125°C
h FE, DC CURRENT GAIN
200
25°C
100
80
60
40
0.004 0.006 0.01
-55°C
V
CE
= 1.0 V
V
CE
= 10 V
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
I
C
, COLLECTOR CURRENT (mA)
3.0
5.0 7.0 10
20
30
50
70 100
Figure 8. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
I
B
, BASE CURRENT (mA)
I
C
= 1.0 mA
10 mA
50 mA
T
J
= 25°C
IC, COLLECTOR CURRENT (mA)
100
T
A
= 25°C
PULSE WIDTH = 300
µs
80 DUTY CYCLE
≤
2.0%
60
40
I
B
= 500
µA
400
µA
300
µA
200
µA
100
µA
100 mA
20
0
5.0 10
20
0
5.0
10
15
20
25
30
35
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
Figure 9. Collector Saturation Region
Figure 10. Collector Characteristics
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.1
T
J
= 25°C
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.6
0.8
0
-0.8
*APPLIES for I
C
/I
B
≤
h
FE
/2
25°C to 125°C
*q
VC
for V
CE(sat)
-55°C to 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1.0 V
25°C to 125°C
-1.6
-2.4
0.1
q
VB
for V
BE
0.2
-55°C to 25°C
50
100
V
CE(sat)
@ I
C
/I
B
= 10
0.2
0.5 1.0
2.0
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
50
100
0.5
1.0 2.0
5.0 10 20
I
C
, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
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