Features
•
Operating Voltage: 5V
•
Access Time: 30, 45 ns
•
Very Low Power Consumption
– Active: 250 mW (Typ)
– Standby: 1 µW (Typ)
– Data Retention: 0.5 µW (Typ)
Wide Temperature Range: -55°C to +125°C
400 Mils Width Packages: FP32 and SB32
TTL Compatible Inputs and Outputs
Asynchronous
Single 5V Supply
Equal Cycle and Access Time
Gated Inputs:
– No Pull-up/down
– Resistors Are Required
QML Q and V with SMD 5962-89598
•
•
•
•
•
•
•
•
Rad. Tolerant
128K x 8
Very Low Power
5V CMOS SRAM
M65608E
Description
The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an
extremely low standby supply current (Typical value = 0.2 µA) with a fast access time
at 30 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The M65608E is processed according to the methods of the latest revision of the MIL
STD 883 (class B or S), ESA SCC 9000 or QML.
Rev. 4151H–AERO–06/03
1
M65608E
Block Diagram
Pin Configuration
32-lead DIL side-brazed
32-lead Flatpack
400 MILS
400 MILS
2
4151H–AERO–06/03
Pin Description
Table 1.
Pin Names
Names
A0 - A16
I/O0 - I/O7
CS1
CS2
WE
OE
VCC
GND
Description
Address inputs
Data Input/Output
Chip select 1
Chip select 2
Write Enable
Output Enable
Power
Ground
Table 2.
Truth Table
CS1
H
CS2
X
W
X
OE
X
Inputs/
Outputs
Z
Mode
Deselect/
Power-down
Deselect/
power-down
Read
Write
Output
Disable
X
L
L
L
Note:
L
H
H
H
X
H
L
H
X
L
X
H
Z
Data Out
Data In
Z
L = low, H = high, X = H or L, Z = high impedance.
3
M65608E
4151H–AERO–06/03
M65608E
Electrical Characteristics
Absolute Maximum Ratings
Supply voltage to GND potential:..........................-0.5V + 7.0V
DC input voltage: ..............................GND - 0.5V to VCC + 0.5
DC output voltage high Z state: ........GND - 0.5V to VCC + 0.5
Storage temperature: ..................................... -65°C to +150°C
Output current into outputs (low): .................................. 20 mA
Electro statics discharge voltage: ............................... > 2001V
(MIL STD 883D method 3015.3)
*NOTE:
Stresses greater than those listed under Absolute Max-
imum Ratings may cause permanent damage to the
device.This is a stress rating only and functional opera-
tion of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
Military Operating Range
Operating Voltage
5V + 10%
Operating Temperature
-55
°
C to + 125
°
C
Recommended DC Operating
Conditions
Parameter
Description
Minimum
4.5
0.0
GND - 0.5
2.2
Typical
5.0
0.0
0.0
–
Maximum
5.5
0.0
0.8
VCC + 0.5
Unit
V
V
V
V
V
CC
GND
V
IL
V
IH
Capacitance
Parameter
Supply voltage
Ground
Input low voltage
Input high voltage
Description
Minimum
–
–
Typical
–
–
Maximum
8
8
Unit
pF
pF
Cin
(1)
Cout
(1)
Note:
Input low voltage
Output high
voltage
1. Guaranteed but not tested.
4
4151H–AERO–06/03
DC Parameters
DC Test Conditions
Table 3.
DC Test Conditions
TA = -55°C to + 125°C; Vss = 0V; V
CC
= 4.5V to 5.5V
Symbol
Description
Minimum
-1
Typical
–
Maximum
1
Unit
µA
IIX
(1)
IOZ
(1)
VOL
(2)
VOH
(3)
1.
2.
3.
Input leakage
current
Output leakage
current
Output low voltage
Output high
voltage
V
CC
min. IOL = 8 mA.
V
CC
min. IOH = -4 mA.
-1
–
2.4
–
–
–
1
0.4
–
µA
V
V
GND < Vin <
V
CC
, GND < Vout <
V
CC
Output Disabled.
Consumption
Symbol
Description
65608E-30
2
65608E-45
2
Unit
mA
Value
max
ICCSB
(1)
ICCSB1
(2)
ICCOP
(3)
1.
2.
3.
Standby supply
current
Standby supply
current
Dynamic operating
current
300
300
µA
max
130
100
mA
max
CS1 >
V
IH
or CS2 <
V
IL
and CS1 <
V
IL
.
CS1 >
V
CC
- 0.3V or, CS2 < GND + 0.3V and CS1 < 0.2V.
F = 1/TAVAV, Iout = 0 mA, W = OE =
V
IH
, Vin = GND or
V
CC
,
V
CC
max.
5
M65608E
4151H–AERO–06/03
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