REVISIONS
LTR
A
DESCRIPTION
Changes in accordance with NOR 5962-R207-97.
DATE (YR-MO-DA)
97-03-14
APPROVED
Monica L. Poelking
B
Changes in accordance with NOR 5962-R387-97.
97-07-25
Raymond Monnin
C
Incorporate revisions A and B. Update boilerplate to MIL-PRF-38535
requirements. Editorial changes throughout. – LTG
04-02-02
Thomas M. Hess
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
C
15
C
16
C
17
C
18
REV
SHEET
PREPARED BY
Dan Wonnell
C
19
C
20
C
21
C
1
C
22
C
2
C
3
C
4
C
5
C
6
C
7
C
8
C
9
C
10
C
11
C
12
C
13
C
14
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
Monica L. Poelking
APPROVED BY
Monica L. Poelking
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
http://www.dscc.dla.mil
DRAWING APPROVAL DATE
95-12-05
MICROCIRCUIT, DIGITAL, RADIATION
HARDENED CMOS, QUAD EXCLUSIVE OR AND
EXCLUSIVE NOR GATES, MONOLITHIC SILICON
AMSC N/A
REVISION LEVEL
SIZE
CAGE CODE
C
A
SHEET
67268
1 OF
22
5962-96611
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
5962-E130-04
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the
Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the
PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
96611
01
V
X
C
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
03
04
Generic number
4070B
4077B
4070BN
4077BN
Circuit function
Radiation hardened CMOS, quad exclusive
OR gate
Radiation hardened CMOS, quad exclusive
NOR gate
Radiation hardened CMOS, quad exclusive
OR gate with neutron irradiated die
Radiation hardened CMOS, quad exclusive
NOR gate with neutron irradiated die
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
M
Q or V
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant, non-
JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
C
X
Descriptive designator
CDIP2-T14
CDFP3-F14
Terminals
14
14
Package style
Dual-in-line package
Flat package
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-96611
SHEET
C
2
1.3 Absolute maximum ratings. 1/ 2/ 3/
Supply voltage range (V
DD
) ........................................................................................
Input voltage range ...................................................................................................
DC input current, any one input .................................................................................
Device dissipation per output transistor .....................................................................
Storage temperature range (T
STG
)..............................................................................
Lead temperature (soldering, 10 seconds) ................................................................
Thermal resistance, junction-to-case (θ
JC
):
Case C ....................................................................................................................
Case X ....................................................................................................................
Thermal resistance, junction-to-ambient (θ
JA
):
Case C ....................................................................................................................
Case X ....................................................................................................................
Junction temperature (T
J
)...........................................................................................
Maximum power dissipation at T
A
= +125°C (P
D
): 4/
Case C ....................................................................................................................
Case X ....................................................................................................................
1.4 Recommended operating conditions.
Supply voltage range (V
DD
) ........................................................................................
Case operating temperature range (T
C
) .....................................................................
Input voltage (V
IN
) ......................................................................................................
Output voltage (V
OUT
) .................................................................................................
Radiation features:
Total dose .............................................................................................................
Single event phenomenon (SEP) effective
linear energy threshold, no upsets or latchup (see 4.4.4.5) ................................
Dose rate upset (20 ns pulse) ...............................................................................
Dose rate latch-up ................................................................................................
Dose rate survivability ..........................................................................................
Neutron irradiated ................................................................................................
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in
the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the
solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
3.0 V dc to +18 V dc
-55°C to +125°C
0 V to V
DD
0 V to V
DD
1 x 10 Rads (Si)
> 75 MeV/(cm /mg) 5/
8
> 5 x 10 Rads(Si)/s 5/
8
> 2 x 10 Rads(Si)/s 5/
11
> 5 x 10 Rads(Si)/s 5/
14
2
> 1 x 10 neutrons/cm 6/
2
5
-0.5 V dc to +20 V dc
-0.5 V dc to V
DD
+ 0.5 V dc
±10
mA
100 mW
-65°C to +150°C
+265°C
24°C/W
30°C/W
74°C/W
116°C/W
+175°C
0.68 W
0.43 W
1/
2/
3/
4/
5/
6/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
Unless otherwise specified, all voltages are referenced to V
SS
.
The limits for the parameters specified herein shall apply over the full specified V
DD
range and case temperature range of
-55°C to +125°C unless otherwise noted.
If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is
based on
θ
JA
) at the following rate:
Case C....................................................................................................................... 13.5 mW/°C
Case X ....................................................................................................................... 8.6 mW/°C
Guaranteed by design or process but not tested.
Device types 03 and 04 only.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-96611
SHEET
C
3
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 -
MIL-STD-1835 -
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Truth tables. The truth tables shall be as specified on figure 2.
3.2.4 Radiation test connections. The radiation test connections shall be as specified in table III herein.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space
limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the
RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-96611
SHEET
C
4
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535
and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain
the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 36 (see MIL-PRF-38535, appendix A).
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-96611
SHEET
C
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
