DRAM Module, 256KX8, 85ns, NMOS, SIMM-30
| 参数名称 | 属性值 |
| 厂商名称 | Mitsubishi(日本三菱) |
| 零件包装代码 | SIMM |
| 包装说明 | SIMM, SIM30 |
| 针数 | 30 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 访问模式 | NIBBLE |
| 最长访问时间 | 85 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-XSMA-N30 |
| 内存密度 | 2097152 bit |
| 内存集成电路类型 | DRAM MODULE |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 30 |
| 字数 | 262144 words |
| 字数代码 | 256000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 256KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | UNSPECIFIED |
| 封装代码 | SIMM |
| 封装等效代码 | SIM30 |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 256 |
| 座面最大高度 | 17.272 mm |
| 最大压摆率 | 0.56 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | NMOS |
| 温度等级 | COMMERCIAL |
| 端子形式 | NO LEAD |
| 端子节距 | 2.54 mm |
| 端子位置 | SINGLE |
| Base Number Matches | 1 |
| MH25708J-85 | MH25708JA-10 | MH25708J-10 | MH25708J-15 | MH25708J-12 | MH25708JA-12 | MH25708JA-15 | BD90610HFP-E2 | |
|---|---|---|---|---|---|---|---|---|
| 描述 | DRAM Module, 256KX8, 85ns, NMOS, SIMM-30 | DRAM Module, 256KX8, 100ns, NMOS, SIMM-30 | DRAM Module, 256KX8, 100ns, NMOS, SIMM-30 | DRAM Module, 256KX8, 150ns, NMOS, SIMM-30 | DRAM Module, 256KX8, 120ns, NMOS, SIMM-30 | DRAM Module, 256KX8, 120ns, NMOS, SIMM-30 | DRAM Module, 256KX8, 150ns, NMOS, SIMM-30 | 1ch Step-Down Switching Regulator |
| 厂商名称 | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) | - |
| 零件包装代码 | SIMM | SIMM | SIMM | SIMM | SIMM | SIMM | SIMM | - |
| 包装说明 | SIMM, SIM30 | , SIP30,.2 | SIMM, SIM30 | SIMM, SIM30 | SIMM, SIM30 | , SIP30,.2 | , SIP30,.2 | - |
| 针数 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | - |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | - |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | - |
| 访问模式 | NIBBLE | NIBBLE | NIBBLE | NIBBLE | NIBBLE | NIBBLE | NIBBLE | - |
| 最长访问时间 | 85 ns | 100 ns | 100 ns | 150 ns | 120 ns | 120 ns | 150 ns | - |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | - |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | - |
| JESD-30 代码 | R-XSMA-N30 | R-XSMA-T30 | R-XSMA-N30 | R-XSMA-N30 | R-XSMA-N30 | R-XSMA-T30 | R-XSMA-T30 | - |
| 内存密度 | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | - |
| 内存集成电路类型 | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE | - |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | - |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - |
| 端子数量 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | - |
| 字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | - |
| 字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | - |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | - |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | - |
| 组织 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | - |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | - |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | - |
| 封装等效代码 | SIM30 | SIP30,.2 | SIM30 | SIM30 | SIM30 | SIP30,.2 | SIP30,.2 | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | - |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | - |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - |
| 刷新周期 | 256 | 256 | 256 | 256 | 256 | 256 | 256 | - |
| 座面最大高度 | 17.272 mm | 18.034 mm | 17.272 mm | 17.272 mm | 17.272 mm | 18.034 mm | 18.034 mm | - |
| 最大压摆率 | 0.56 mA | 0.52 mA | 0.52 mA | 0.44 mA | 0.48 mA | 0.48 mA | 0.44 mA | - |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | - |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | - |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | - |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | - |
| 技术 | NMOS | NMOS | NMOS | NMOS | NMOS | NMOS | NMOS | - |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | - |
| 端子形式 | NO LEAD | THROUGH-HOLE | NO LEAD | NO LEAD | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | - |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | - |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | - |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - | - | - |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
