ELM76xxxxxxxxC
CMOS Voltage detector with delay function
■General description
ELM76xxxxxxxxC is CMOS voltage detector IC with delay function; external capacitor is unnecessary
for the delay time circuit. There are 4 types of delay time selection of ELM76 series: Typ.50ms, Typ.150ms,
Typ.250ms, Typ.500ms, and ELM76 series can also be made as semi-custom ICs within the range of 30ms
to 500ms by 10ms step. There are two output styles of ELM76 series: N-ch open-drain and CMOS output. In
addition, two output logic modes are available; RESET and RESET. The output level is high for RESET mode
and low for RESET mode when VDD is lower than detection voltage. The standard detection voltages are 1.6V,
2.5V, 2.7V, 3.0V, 4.0V and 5.5V and ELM76 series can also be made as semi-custom ICs within 1.6 to 5.5V by
0.1V step.
■Features
•
•
•
•
•
•
Detection voltage range
Low current consumption
Accuracy of detection voltage
Delay time after Vdd recovery
Hysteresis voltage
Package
: 1.6V to 5.5V (by 0.1V)
: Typ.0.4μA(Vdd=VdetN+1V)
: ±2.0%
: Typ.50ms, Typ.150ms, Typ.250ms, Typ.500ms
: Typ.VdetN×1.04(Top=25°C)
: SOT-23, SC-70-5(SOT-353), SC-82AB
■Application
•
•
•
•
Reset for microcomputers
Voltage power shortage detectors
Switch of back-up power source
Battery checkers
■Maximum absolute ratings
Parameter
Power supply voltage
Output voltage
Output current
Power dissipation
Operating temperature
Storage temperature
Symbol
Vdd
Vout
Iout
Pd
Top
Tstg
Limit
Vss-0.3 to 8.0
Vss-0.3 to Vdd+0.3
100
250 (SOT-23)
150 (SC-70-5)(SOT-353)
150 (SC-82AB)
-40 to +85
-55 to +125
Unit
V
V
mA
mW
°C
°C
16 - 1
Rev.1.2
ELM76xxxxxxxxC
CMOS Voltage detector with delay function
■Selection guide
ELM76xxxxxxxxC-x
Symbol
a, b
c
d
e, f
g
h
i
j
Detection voltage
Output mode
Output from
Delay time
Package
Pin configuration
type
Product version
Taping direction
e.g. :
16: VdetN=1.6V, 25: VdetN=2.5V
27: VdetN=2.7V, 30: VdetN=3.0V
40: VdetN=4.0V, 55: VdetN=5.5V
L: RESET output mode
H: RESET output mode
C : CMOS output
N : N-ch open-drain output
05: Typ.50ms, 15: Typ.150ms
25: Typ.250ms, 50: Typ.500ms
B : SOT-23
C : SC-70-5(SOT-353), SC-82AB
1 : type1
2 : type2
3 : type3
4 : type4
C
S, N: Refer to PKG file
ELM76 x x x x x x x x C - x
↑↑↑↑↑↑↑↑ ↑ ↑
abcdef gh i
j
■Pin configuration
SC-70-5(TOP VIEW)
Pin No.
1
2
3
4
5
Pin name
(76xxxxxxC1C)
NC
VDD
NC
OUT
VSS
SOT-23(TOP VIEW)
3
Pin No.
1
2
3
1
2
Pin name
(76xxxxxxB1C) (76xxxxxxB2C)
OUT
VSS
VSS
OUT
VDD
VDD
Pin name
(76xxxxxxC3C)
VSS
OUT
NC
VDD
SC-82AB(TOP VIEW)
Pin No.
1
2
3
4
(76xxxxxxC2C)
OUT
VDD
NC
VSS
(76xxxxxxC4C)
NC
VSS
OUT
VDD
Rev.1.2
16 - 2
ELM76xxxxxxxxC
CMOS Voltage detector with delay function
■Timing chart
RESET output logic
Vdd
VdetP
VdetN
Vopmin
Vss
Vhys
RESET output logic
Vdd
VdetP
VdetN
Vopmin
Vss
Vhys
Vout
Vout
Vss
Tdelay2
Tdelay1
Vss
Tdelay2
Tdelay1
■Block diagram
CMOS output for RESET output logic
VDD
Vref
VDD
CMOS output for RESET output logic
+
-
Delay
OUT
Vref
+
-
Delay
OUT
VSS
VSS
N-ch open-drain output for RESET output logic
VDD
Vref
N-ch open-drain output for RESET output logic
VDD
+
-
Delay
OUT
Vref
+
-
Delay
OUT
VSS
VSS
16 - 3
Rev.1.2
ELM76xxxxxxxxC
CMOS Voltage detector with delay function
■Electrical characteristics
VdetN=1.6V(ELM7616xxxxxxC)
Parameter
Detection voltage
Hysteresis width
Current consumption
Power voltage
RESET output current
RESET output curernt
Delay time(50ms)
Delay time(150ms)
Delay time(250ms)
Delay time(500ms)
Temperature
characteristic of VdetN
Symbol
VdetN
Vhys
Iss
Vdd
IoutN
Vdd=2.6V
Vdd=0.9V, Vds=0.3V
Vdd=1.0V, Vds=0.3V
Vdd=3.0V, Vds=0.4V
Vdd=3.0V, Vds=0.4V
Vdd=1.5V, Vds=0.4V
Vdd=1.0V → 3.0V
Vdd=3.0V → 1.0V
Vdd=1.0V → 3.0V
Vdd=3.0V → 1.0V
Vdd=1.0V → 3.0V
Vdd=3.0V → 1.0V
Vdd=1.0V → 3.0V
Vdd=3.0V → 1.0V
Condition
Vss=0V, Top=25°C
Min.
Typ.
Max.
Unit
Note
1.568 1.600 1.632
V
2
VdetN VdetN VdetN
V
2
×0.02 ×0.04 ×0.08
0.4
1.8
μA
1
0.9
6.0
V
2
0.2
1.7
mA
3-(1)
1.0
3.1
0.5
1.1
mA
3-(2)
15.0
30.0
mA
3-(1)
0.1
0.3
mA
3-(2)
40
50
60
ms
4
10
μs
120
150
180
ms
4
10
μs
200
250
300
ms
4
10
μs
400
500
600
ms
4
10
μs
+30
ppm/°C
* Note: Test circuit No., IoutP is applied only for CMOS output products.
IoutP
IoutN
IoutP
Tdelay1
Tdelay2
Tdelay1
Tdelay2
Tdelay1
Tdelay2
Tdelay1
Tdelay2
ΔVdetN
Top=-40°C to +85°C
ΔTop
VdetN=2.5V(ELM7625xxxxxxC)
Parameter
Detection voltage
Hysteresis width
Current consumption
Power voltage
RESET output current
RESET output curernt
Delay time(50ms)
Delay time(150ms)
Delay time(250ms)
Delay time(500ms)
Temperature
characteristic of VdetN
Symbol
VdetN
Vhys
Iss
Vdd
IoutN
Condition
Vdd=3.5V
Vdd=0.9V, Vds=0.3V
Vdd=1.0V, Vds=0.3V
Vdd=3.0V, Vds=0.4V
Vdd=3.0V, Vds=0.4V
Vdd=1.5V, Vds=0.4V
Vdd=1.0V → 3.0V
Vdd=3.0V → 1.0V
Vdd=1.0V → 3.0V
Vdd=3.0V → 1.0V
Vdd=1.0V → 3.0V
Vdd=3.0V → 1.0V
Vdd=1.0V → 3.0V
Vdd=3.0V → 1.0V
* Note: Test circuit No., IoutP is applied only for CMOS output products.
IoutP
IoutN
IoutP
Tdelay1
Tdelay2
Tdelay1
Tdelay2
Tdelay1
Tdelay2
Tdelay1
Tdelay2
ΔVdetN
Top=-40°C to +85°C
ΔTop
Vss=0V, Top=25°C
Min.
Typ.
Max.
Unit
Note
2.450 2.500 2.550
V
2
VdetN VdetN VdetN
V
2
×0.02 ×0.04 ×0.08
0.4
1.8
μA
1
0.9
6.0
V
2
0.2
1.7
mA
3-(1)
1.0
3.1
0.5
1.1
mA
3-(2)
15.0
30.0
mA
3-(1)
0.1
0.3
mA
3-(2)
40
50
60
ms
4
10
μs
120
150
180
ms
4
10
μs
200
250
300
ms
4
10
μs
400
500
600
ms
4
10
μs
+30
ppm/°C
16 - 4
Rev.1.2
ELM76xxxxxxxxC
CMOS Voltage detector with delay function
VdetN=2.7V(ELM7627xxxxxxC)
Parameter
Detection voltage
Hysteresis width
Current consumption
Power voltage
RESET output current
RESET output curernt
Delay time(50ms)
Delay time(150ms)
Delay time(250ms)
Delay time(500ms)
Temperature
characteristic of VdetN
Symbol
VdetN
Vhys
Iss
Vdd
IoutN
Vdd=3.7V
Vdd=0.9V, Vds=0.3V
Vdd=1.0V, Vds=0.3V
Vdd=4.5V, Vds=0.4V
Vdd=4.5V, Vds=0.4V
Vdd=1.5V, Vds=0.4V
Vdd=1.0V → 4.5V
Vdd=4.5V → 1.0V
Vdd=1.0V → 4.5V
Vdd=4.5V → 1.0V
Vdd=1.0V → 4.5V
Vdd=4.5V → 1.0V
Vdd=1.0V → 4.5V
Vdd=4.5V → 1.0V
Condition
Vss=0V, Top=25°C
Min.
Typ.
Max.
Unit
Note
2.646 2.700 2.754
V
2
VdetN VdetN VdetN
V
2
×0.02 ×0.04 ×0.08
0.4
1.8
μA
1
0.9
6.0
V
2
0.2
1.7
mA
3-(1)
1.0
3.1
0.8
1.5
mA
3-(2)
20.0
40.0
mA
3-(1)
0.1
0.3
mA
3-(2)
40
50
60
ms
4
10
μs
120
150
180
ms
4
10
μs
200
250
300
ms
4
10
μs
400
500
600
ms
4
10
μs
+30
ppm/°C
* Note: Test circuit No., IoutP is applied only for CMOS output products.
IoutP
IoutN
IoutP
Tdelay1
Tdelay2
Tdelay1
Tdelay2
Tdelay1
Tdelay2
Tdelay1
Tdelay2
ΔVdetN
Top=-40°C to +85°C
ΔTop
VdetN=3.0V(ELM7630xxxxxxC)
Parameter
Detection voltage
Hysteresis width
Current consumption
Power voltage
RESET output current
RESET output curernt
Delay time(50ms)
Delay time(150ms)
Delay time(250ms)
Delay time(500ms)
Temperature
characteristic of VdetN
Symbol
VdetN
Vhys
Iss
Vdd
IoutN
Condition
Vdd=4.0V
Vdd=0.9V, Vds=0.3V
Vdd=1.0V, Vds=0.3V
Vdd=4.5V, Vds=0.4V
Vdd=4.5V, Vds=0.4V
Vdd=1.5V, Vds=0.4V
Vdd=1.0V → 4.5V
Vdd=4.5V → 1.0V
Vdd=1.0V → 4.5V
Vdd=4.5V → 1.0V
Vdd=1.0V → 4.5V
Vdd=4.5V → 1.0V
Vdd=1.0V → 4.5V
Vdd=4.5V → 1.0V
* Note: Test circuit No., IoutP is applied only for CMOS output products.
IoutP
IoutN
IoutP
Tdelay1
Tdelay2
Tdelay1
Tdelay2
Tdelay1
Tdelay2
Tdelay1
Tdelay2
ΔVdetN
Top=-40°C to +85°C
ΔTop
Vss=0V, Top=25°C
Min.
Typ.
Max.
Unit
Note
2.940 3.000 3.060
V
2
VdetN VdetN VdetN
V
2
×0.02 ×0.04 ×0.08
0.4
1.8
μA
1
0.9
6.0
V
2
0.2
1.7
mA
3-(1)
1.0
3.1
0.8
1.5
mA
3-(2)
20.0
40.0
mA
3-(1)
0.1
0.3
mA
3-(2)
40
50
60
ms
4
10
μs
120
150
180
ms
4
10
μs
200
250
300
ms
4
10
μs
400
500
600
ms
4
10
μs
+30
ppm/°C
16 - 5
Rev.1.2
ARM技术
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