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PTF210301A

产品描述LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
产品类别分立半导体    晶体管   
文件大小322KB,共8页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
下载文档 详细参数 选型对比 全文预览

PTF210301A概述

LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

PTF210301A规格参数

参数名称属性值
是否无铅含铅
厂商名称Infineon(英飞凌)
包装说明FLANGE MOUNT, S-CDFM-F2
针数2
Reach Compliance Codecompli
ECCN代码EAR99
其他特性HIGH RELIABILITY
外壳连接SOURCE
配置SINGLE
最小漏源击穿电压65 V
FET 技术METAL-OXIDE SEMICONDUCTOR
最高频带S BAND
JESD-30 代码S-CDFM-F2
JESD-609代码e3
元件数量1
端子数量2
工作模式ENHANCEMENT MODE
最高工作温度200 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状SQUARE
封装形式FLANGE MOUNT
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)116 W
认证状态Not Qualified
表面贴装YES
端子面层MATTE TIN
端子形式FLAT
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON

文档预览

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PTF210301
LDMOS RF Power Field Effect Transistor
30 W, 2110–2170 MHz
Description
The PTF210301 is a 30 W, internally matched
GOLDMOS
FET intended
for WCDMA applications from 2110 to 2170 MHz. Full gold metallization
ensures excellent device lifetime and reliability.
Features
Broadband internal matching
Typical two–carrier WCDMA performance
- Average output power = 7.0 W
- Gain = 16 dB
- Efficiency = 25%
- IM3 = –37 dBc
Typical CW performance
- Output power at P–1dB = 36 W
- Gain = 15 dB
- Efficiency = 53%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
30 W (CW) output power
Two–Carrier WCDMA Drive–Up
f = 2140 MHz, 3GPP WCDMA Signal, P/A R = 8 dB,
10 MHz Carrier Spacing, V
DD
= 28 V, I
DQ
= 380 mA
-25
Efficiency
30
25
IM3 (dBc), ACPR (dBc)
-30
-35
-40
-45
-50
ACPR
-55
30
32
34
36
38
40
IM3
Drain Efficiency (%)
20
15
10
5
0
PTF210301A
Package 20265
Average Output Power (dBm)
PTF210301E
Package 30265
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 380 mA, P
OUT
= 36.5 dBm
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IMD
G
ps
h
D
Min
Typ
–44
16
20
Max
Units
dBc
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 380 mA, P
OUT
= 9 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
14.5
15
Typ
16
18
–47
Max
–42
Units
dB
%
dBc
ESD:
Electrostatic discharge sensitive device — observe handling precautions!
Data Sheet
1
2003-12-22

PTF210301A相似产品对比

PTF210301A PTF210301E PTF210301
描述 LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
厂商名称 Infineon(英飞凌) Infineon(英飞凌) -
包装说明 FLANGE MOUNT, S-CDFM-F2 FLANGE MOUNT, S-CDFM-F2 -
针数 2 2 -
Reach Compliance Code compli compli -
ECCN代码 EAR99 EAR99 -
其他特性 HIGH RELIABILITY HIGH RELIABILITY -
外壳连接 SOURCE SOURCE -
配置 SINGLE SINGLE -
最小漏源击穿电压 65 V 65 V -
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
最高频带 S BAND S BAND -
JESD-30 代码 S-CDFM-F2 S-CDFM-F2 -
JESD-609代码 e3 e3 -
元件数量 1 1 -
端子数量 2 2 -
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE -
最高工作温度 200 °C 200 °C -
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED -
封装形状 SQUARE SQUARE -
封装形式 FLANGE MOUNT FLANGE MOUNT -
极性/信道类型 N-CHANNEL N-CHANNEL -
最大功率耗散 (Abs) 116 W 145 W -
认证状态 Not Qualified Not Qualified -
表面贴装 YES YES -
端子面层 MATTE TIN MATTE TIN -
端子形式 FLAT FLAT -
端子位置 DUAL DUAL -
晶体管应用 AMPLIFIER AMPLIFIER -
晶体管元件材料 SILICON SILICON -

 
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