PTF210301
LDMOS RF Power Field Effect Transistor
30 W, 2110–2170 MHz
Description
The PTF210301 is a 30 W, internally matched
GOLDMOS
FET intended
for WCDMA applications from 2110 to 2170 MHz. Full gold metallization
ensures excellent device lifetime and reliability.
Features
•
•
Broadband internal matching
Typical two–carrier WCDMA performance
- Average output power = 7.0 W
- Gain = 16 dB
- Efficiency = 25%
- IM3 = –37 dBc
Typical CW performance
- Output power at P–1dB = 36 W
- Gain = 15 dB
- Efficiency = 53%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
30 W (CW) output power
Two–Carrier WCDMA Drive–Up
f = 2140 MHz, 3GPP WCDMA Signal, P/A R = 8 dB,
10 MHz Carrier Spacing, V
DD
= 28 V, I
DQ
= 380 mA
-25
Efficiency
30
25
•
IM3 (dBc), ACPR (dBc)
-30
-35
-40
-45
-50
ACPR
-55
30
32
34
36
38
40
IM3
•
Drain Efficiency (%)
20
15
10
5
0
•
•
•
PTF210301A
Package 20265
Average Output Power (dBm)
PTF210301E
Package 30265
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 380 mA, P
OUT
= 36.5 dBm
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IMD
G
ps
h
D
Min
—
—
—
Typ
–44
16
20
Max
—
—
—
Units
dBc
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 380 mA, P
OUT
= 9 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
14.5
15
—
Typ
16
18
–47
Max
—
—
–42
Units
dB
%
dBc
ESD:
Electrostatic discharge sensitive device — observe handling precautions!
Data Sheet
1
2003-12-22
PTF210301
DC Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 380 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.26
3.2
—
Max
—
1.0
—
4
1.0
Units
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance
(T
CASE
= 70°C, 30 W CW)
PTF210301A
PTF210301E
T
STG
R
θJC
R
θJC
PTF210301E
P
D
PTF210301A
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
116
0.67
145
0.83
–40 to +150
1.5
1.2
Unit
V
V
°C
W
W/°C
W
W/°C
°C
°C/W
°C/W
Typical Performance
(data taken in a production test fixture)
Power Sweep, CW Conditions
V
DD
= 28 V, I
DQ
= 380 mA, f = 2170 MHz
18
Efficiency
55
45
35
25
15
5
0
10
20
30
40
Broadband Performance
V
DD
= 28 V, I
DQ
= 380 mA, P
OUT
= 39.5 dBm
35
0
Gain (dB), Efficiency (%)
Input Return Loss (dB)
30
25
20
15
Gain
Efficiency
Return Loss
-5
-10
-15
-20
16
15
14
13
Gain
10
-25
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Output Power (W)
Data Sheet
2
2003-12-22
Drain Efficiency (%)
17
Gain (dB)
PTF210301
Typical Performance
(cont.)
Intermodulation Distortion vs. Output Power
V
DD
= 28 V, f = 2140 MHz, Tone Spacing = 1 MHz
-25
Intermodulation Distortion Products
vs. Tone Spacing
-25
V
DD
= 28V I
DQ
= 380 mA, f = 2140 MHz,
Output Power = 44.75 dBm PEP
Intermodulation Distortion
(dBc)
-30
3rd Order IMD (dBc)
455 mA
420 mA
-30
-35
-40
-45
-50
-55
-60
7th
5th
3rd Order
-35
-40
-45
-50
-55
-60
32
345 mA
380 mA
300 mA
34
36
38
40
42
44
46
-5
5
15
25
35
Output Power, PEP (dBm)
Tone Spacing (MHz)
Two–Tone Drive–Up at Optimum I
DQ
V
DD
= 28 V, I
DQ
= 380 mA,
f = 2140 MHz, Tone Spacing = 1 MHz
Intermodulation Distortion (dBc)
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
32
36
40
44
48
IM7
IM5
Efficiency
IM3
45
40
35
30
25
20
15
10
5
0
Single–Carrier WCDMA Drive–Up
V
DD
= 28 V, I
DQ
= 380 mA, f = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67%
Clipping, P/A R = 8.7 dB, 3.84 MHz BW
-35
Efficiency
30
Drain Efficiency (%)
20
-45
ACPR Up
-50
10
-55
-60
28
32
36
40
ACPR Low
0
Output Power, PEP (dBm)
Average Output Power (dBm)
Data Sheet
3
2003-12-22
Drain Efficiency (%)
-40
Adjacent Channel
Power Ratio (dB)
PTF210301
Typical Performance
(cont.)
IM3, Drain Efficiency and Gain
vs. Supply Voltage
I
DQ
= 380 mA, f = 2140 MHz, Tone Spacing = 1 MHz,
Output Power (PEP) = 44.75 dBm
-10
-15
-20
-25
IM3 Up
-30
-35
-40
-45
23 24 25 26 27 28 29 30 31 32 33
Gain
25
20
15
10
Efficiency
45
40
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
3rd Order Intermodulation
Distortion (dBc)
Normalized Bias Voltage
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
20
60
100
0.20
0.77
1.33
1.90
2.47
3.03
35
30
Gain (dB),
Drain Efficiency (%)
Supply Voltage (V)
Case Temperature (°C)
Broadband Circuit Impedance Data
O
D
Z
0
= 50
Ω
Z Source
Z Load
0.1
G
0.0
0.1
0.2
0.3
0.4
D-
T
OW
ARD
L
OA
GT
HS
S
Z Source
Z Load
2210 MHz
0.1
Frequency
MHz
2070
2110
2140
2170
2210
R
Z Source
Ω
jX
–4.3
–3.8
–3.6
–3.6
–3.7
R
5.5
5.1
4.8
4.4
4.0
12.6
13.5
14.2
15.0
16.1
Z Load
Ω
jX
–5.7
–5.4
–4.9
–4.6
–4.3
2070 MHz
2070 MHz
2210 MHz
W
<---
L EN
A VE
0.
2
3
Data Sheet
4
2003-12-22
0.5
PTF210301
Test Circuit
ERS210301-1
Test Circit Schematic for f = 2170 MHz
DUT
PTF210301
LDMOS Transistor
PCB
Microstrip
l
1
l
2
l
3
l
4
l
5
l
6
l
7
l
8
l
9
l
10
l
11
l
12
l
13
l
14
0.76 mm. [.030”] thick,
ε
r
= 4.5
Electrical Characteristics at 2170 MHz
0.102
λ,
50
Ω
0.078
λ,
22.8
Ω
0.098
λ,
42.8
Ω
0.053
λ,
11.6
Ω
0.136
λ,
74
Ω
0.373
λ,
54.5
Ω
0.054
λ,
11.6
Ω
0.047
λ,
18.2
Ω
0.019
λ,
28.5
Ω
0.019
λ,
14.3
Ω
0.110
λ,
50
Ω
0.087
λ,
50
Ω
0.152
λ,
52.7
Ω
0.340
λ,
50
Ω
Rogers TMM4
Dimensions: W x L (mm.)
7.62 x 1.42
5.51 x 4.45
7.24 x 1.83
3.61 x 10.03
10.16 x 0.66
27.94 x 1.19
3.68 x 10.03
3.30 x 5.84
1.37 x 3.30
1.32 x 7.87
8.26 x 1.42
6.48 x 1.42
11.43 x 1.27
25.40 x 1.42
2 oz. copper
Dimensions: W xL (in.)
0.300 x 0.056
0.217 x 0.175
0.285 x 0.072
0.142 x 0.395
0.400 x 0.026
1.100 x 0.047
0.145 x 0.395
0.130 x 0.230
0.054 x 0.130
0.052 x 0.310
0.325 x 0.056
0.255 x 0.056
0.450 x 0.050
1.000 x 0.056
Data Sheet
5
2003-12-22
嵌入式系统
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