Differential Magnetoresistive Sensor
FP 212 D 250-22
Features
•
•
•
•
High output voltage
High operating temperature
Robust plastic housing
Signal amplitude is speed
independent
• Biasing magnet build in
• Marking green
Typical applications
• Detection of speed
• Detection of position
• Detection of sense of
rotation
• Angle encoder
• Linear position sensing
Dimensions in mm
Type
FP 212 D 250-22
Ordering Code
Q65212-D2504
The differential magnetoresistive sensor FP 212 D 250-22 consists of two series coupled
magneto resistors (D-type InSb/NiSb semiconductor resistors whose value can be
magnetically controlled) which are mounted onto an insulated ferrite substrate. The
sensor is encapsulated in a plastic package and has three connecting terminals. The
basic resistance of the total system is 2×250
Ω.
A permanent magnet which supplies a
biasing magnetic field is fixed on the base of the sensor.
Semiconductor Group
1
07.96
FP 212 D 250-22
Maximum ratings
Parameter
Operating temperature
Storage temperature
Power dissipation
1)
Supply voltage
2)
Insulation voltage between
terminals and magnet
Thermal conductivity
(when soldered)
Characteristics (
T
A
= 25
°C)
Nominal supply voltage
Total resistance, (δ =
∞,
I
≤
1 mA)
air gap (δ =
∞)
Center symmetry
3)
(δ =
∞)
Offset voltage
4)
(at
V
IN N
and
δ
=
∞)
Open circuit output voltage
5)
(at
V
IN N
and
δ
= 0.2 mm)
Cut-off frequency
Measuring arrangements
By approaching a soft iron part close to the sensor a change in its resistance is obtained.
The potential divider circuit of the magneto resistor causes a reduction in the
temperature dependence of the output voltage
V
OUT
.
Symbol
Value
– 40/ + 140
– 40/ + 150
450
10
> 60
≥
5
Unit
°C
°C
mW
V
V
mW/K
T
A
T
stg
P
tot
V
IN
V
I
G
thA
V
IN N
R
1-3
M
V
0
V
out pp
f
c
5
1000…1600
≤
10
≤
130
> 1100
> 20
V
Ω
%
mV
mV
kHz
1) Corresponding to diagram
P
tot
=
f
(
T
A
)
2) Corresponding to diagram
V
IN
=
f(T
A
)
3)
R
1
–
2
–
R
2
–
3
M
= ---------------------------
×
100% for
R
1-2
>
R
2-3
-
R
1
–
2
4) Corresponding to measuring circuit in
Fig. 2
5) Corresponding to measuring circuit in
Fig. 2
and arrangement as shown in
Fig. 1
Semiconductor Group
2
FP 212 D 250-22
1. Digital revolution counting
For digital revolution counting, the sensor should be actuated by a magnetically soft iron
toothed wheel. The tooth spacing should correspond to about twice the magneto resistor
intercenter spacing i.e. 2×1.6 mm (see
Fig. 1).
The two resistors of the sensor are supplemented by two additional resistors in order to
obtain the sensor output voltage as a bridge voltage
V
OUT
. The output voltage
V
OUT
without excitation then is 0 V when the offset is compensated.
Fig. 1
Schematic representation of a toothed wheel actuating an FP 212 D 250-22
Fig. 2
Measuring circuit and output voltage
V
OUT
waveform
Semiconductor Group
3
FP 212 D 250-22
2. Linear distance measurement
To convert small distances into a proportional electric signal, a small soft iron part of
definite width (e.g.
b
= 1.8 mm) is moved over the face of the sensor.
Proportional signals for distances up to 1.5 mm can be obtained in this way. The
sinusoidal output signal gives a voltage proportional to distance in the zero crossover
region (see
Fig. 3).
Fig. 3
Arrangement for analogue application
Maximum supply voltage
versus temperature
V
IN
=
f
(
T
A
)
Semiconductor Group
4
FP 212 D 250-22
Output voltage (typical) versus
temperature
V
OUTpp
=
f
(
T
A
),
δ
= 0.2 mm
=
V
OUTpp
at
T
A
= 25
°C
^ 100%
Output voltage (typical) versus
airgap
V
OUTpp
=
f
(δ),
T
A
= 25
°C
=
V
OUTpp
at
δ
= 0.2 mm ^ 100%
Total resistance (typical)
versus temperature
R
1-3
=
f
(
T
A
),
δ
=
∞
Max. power dissipation
versus temperature
P
tot
=
f
(
T
A
),
δ
=
∞
Semiconductor Group
5
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