Differential Magneto Resistor
FP 425 L 90
Dimensions in mm
Features
•
•
•
•
•
•
•
Double differential magneto resistor on one carrier
Accurate intercenter spacing
High operating temperature range
High output voltage
Compact construction
Available in strip form for automatic assembly
Optimized intercenter spacing on modules
m
= 0.5 mm
• Reduced temperature dependence of offset
voltage
Typical applications
•
•
•
•
Incremental angular encoders
Detection of sense of rotation
Detection of speed
Detection of position
Semiconductor Group
1
07.96
FP 425 L 90
Type
FP 425 L 90
FP 425 L 90
Ordering Code
Q65425-L90 (singular)
Q65425-L0090E001 (taped)
The double differential magneto resistor assembly consists of two pairs of magneto
resistors, (L-type InSb/NiSb semiconductor resistors whose resistance value can be
magnetically controlled), which are fixed to a silicon substrate. Contact to the magneto
resistors is achieved using a copper/polyimide carrier film known as TAB.
The basic resistance of each of the magneto resistors is 90
Ω.
The two series coupled
pairs of magneto resistor are actuated by an external magnetic field or can be biased by
a permanent magnet and actuated by a soft iron target.
Semiconductor Group
2
FP 425 L 90
Maximum ratings
Parameter
Operating temperature
Storage temperature
Power dissipation
1)
Supply voltage (
B
= 0.2 T,
T
A
= 25
°C)
Thermal conductivity
–attached to heatsink
–in still air
Characteristics (
T
A
= 25
°C)
Nominal supply voltage (
B
= 0.2 T)
2)
Basic resistance
(
I
< 1 mA,
B
= 0 T)
Center symmetry
3)
Relative resistance change
(
R
0
=
R
01-3
,
R
04-6
at
B
= 0 T)
B
=
±
0.3 T
4)
B
=
±
1T
Temperature coefficient
B
=0T
B
=
±
0.3 T
B
=
±
1T
Symbol
Value
– 40 / + 175
– 40 / + 185
800
8
20
2
Unit
°C
°C
mW
V
mW/K
mW/K
T
A
T
stg
P
tot
V
IN
G
thcase
G
thA
V
INN
R
01-3
M
R
B
/
R
0
5
160 – 280
≤
3
V
Ω
%
–
> 1.7
>7
TC
R
– 0.16
– 0.38
– 0.54
%/K
%/K
%/K
1)
2)
3)
T
=
T
case
T
=
T
case
, T
< 80
°
C
M
M
R
01
–
2
–
R
02
–
3
= -------------------------------
×
100% for
R
01-2
>
R
02-3
-
= -------------------------------
×
100% for
R
04-5
>
R
05-6
-
R
04
–
5
R
01
–
2
R
04
–
5
–
R
05
–
6
4) 1 T = 1 Tesla = 10
4
Gauss
Semiconductor Group
3
FP 425 L 90
Max. power dissipation versus
temperature
P
tot
=
f
(
T
),
T
=
T
case
,
T
A
Maximum supply voltage
versus temperature
V
IN
=
f
(
T
),
B
= 0.2 T
Typical MR resistance
versus temperature
R
01-3, 4-6
=
f
(
T
A
),
B
= Parameter
Typical MR resistance
versus magnetic induction
B
R
01-3, 4-6
=
f
(
B
),
T
A
= 25
°C
Semiconductor Group
4
模拟电子
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