Mini PROFET® BSP 550
MiniPROFET
•
High-side switch
•
Short-circuit protection
•
Input protection
•
Overtemperature protection with hysteresis
•
Overload protection
•
Overvoltage protection
•
Switching inductive load
•
Clamp of negative output voltage with inductive loads
•
Undervoltage shutdown
•
Maximum current internally limited
•
Electrostatic discharge
(ESD) protection
•
Reverse battery protection
1)
Package: SOT 223
Type
Ordering code
Q67000-S311
Pins
1
OUT
2
GND
3
IN
4
V
bb
4
3
2
1
BSP 550
Maximum Ratings
Parameter
Supply voltage range
Load current
self-limited
Maximum input voltage
2)
Maximum input current
Inductive load switch-off energy dissipation
single pulse
I
L
= 1.0A ,
T
A
= 85°C
Operating temperature range
Storage temperature range
Max. power dissipation (DC)
3)
T
A
= 25 °C
Electrostatic discharge capability (ESD)
4)
Thermal resistance
chip - soldering point:
chip - ambient
3)
Symbol
V
bb
I
L
V
IN
I
IN
E
AS
Values
-0.3...48
I
L(SC)
-5.0...V
bb
±5
0.3
-40 ...+125
-55 ...+150
1.4
±1
7
70
Unit
V
A
V
mA
J
°C
W
kV
K/W
T
j
T
stg
P
tot
V
ESD
R
thJS
R
thJA
+ V bb
4
Voltage
source
ESD-
Diode
Overvoltage
protection
Current
limit
Gate
protection
V
Logic
Voltage
sensor
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
OUT
Temperature
sensor
1
3
R
IN
in
Load
ESD
Logic
GND
MINI-PROFET
Load GND
2
Signal GND
GND
=150
Ω
in GND connection, resistor in series with IN connections reverse load current
limited by connected load.
2) At V > V , the input current is not allowed to exceed
±5
mA.
IN
bb
3) BSP 550 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for V connection
bb
4) HBM according to MIL-STD 883D, Methode 3015.7
1) With resistor R
Semiconductor Group
1
06.96
BSP 550
Electrical Characteristics
Parameter and Conditions
at
T
j
= 25 °C,
Vbb
= 24V unless otherwise specified
Symbol
Values
min
typ
Unit
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1)
I
L
= 1.0 A,
V
in
= high
T
j
= 25°C
T
j
= 125°C
Nominal load current (pin 4 to 1)
5)
ISO Standard:
V
ON
=
V
bb
-
V
OUT
= 0.5 V
T
S
= 85 °C
Turn-on time
to 90%
V
OUT
Turn-off time
to 10%
V
OUT
R
L
= 24
Ω
Slew rate on
10 to 30%
V
OUT
,
R
L
= 24
Ω
Slew rate off
70 to 40%
V
OUT
,
R
L
= 24
Ω
R
ON
I
L(ISO)
--
--
1.7
0.16
--
--
0.2
0.38
--
Ω
A
t
on
t
off
dV /dt
on
-dV/dt
off
--
--
--
--
60
90
2
2
100
150
4
4
µs
V/µs
V/µs
Input
Allowable input voltage range, (pin 3 to 2)
Input turn-on threshold voltage
Vbb
= 18...30V
T
j
= -25...+125°C
Input turn-off threshold voltage
Vbb
= 18...30V
T
j
= -25...+125°C
Input threshold hysteresis
Off state input current (pin 3)
V
IN(off)
= 1.82 V
T
j
= -25...+125°C
On state input current (pin 3)
V
IN(on)
= 3.0 V to
V
bb
T
j
= -25...+125°C
Input resistance
T
j
= -25...+125°C
V
IN
V
IN(T+)
V
IN(T-)
∆V
IN(T)
I
IN(off)
I
IN(on)
R
IN
-3.0
--
1.82
--
20
--
1.5
--
--
--
0.1
--
--
2.8
V
bb
3.0
--
--
--
110
3.5
V
V
V
V
µA
µA
kΩ
5)
I
L(ISO)
characterizes the MOSFET part of the device and may be higher than the shortcircuit
I
L(SC)
current of the whole device
Semiconductor Group
2
BSP 550
Parameter and Conditions
at
T
j
= 25 °C,
Vbb
= 24V unless otherwise specified
Symbol
Values
min
typ
Unit
max
Operating Parameters
Operating voltage
Undervoltage shutdown
Undervoltage restart
Undervoltage hysteresis
T
j
=-25...+125°C
T
j
=-25...+125°C
T
j
=-25...+125°C:
V
bb(on)
V
bb(under)
V
bb(u rst)
∆
V
bb(under
)
12
7
--
--
--
--
--
--
--
0.4
10
1
--
40
10.5
11
--
25
50
1.6
2
V
V
V
V
µA
mA
µA
Standby current (pin 4),
V
in
= low
T
j
=-25...+100°C
T
j
=125°C
6)
Operating current (pin 2),
V
in
= high
T
j
=-25...+125°C
leakage current (pin 1)
V
in
= low
T
j
=-25...+125°C
Protection Functions
Current limit (pin 4 to 1)
I
bb(off)
I
GND
I
L(off)
T
j
= 25°C
T
j
= -25...+125°C
Overvoltage protection
I
bb
=4mA
T
j
=-25...+125°C
Output clamp (ind. load switch off)
V
OUT
=
V
bb
-
V
ON(CL),
I
bb
= 4mA
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation
7)
T
j Start
= 85 °C, single pulse,
I
L
= 1.0 A,
V
bb
= 12 V
Reverse Battery
Reverse battery voltage
8
)
Continious reverse drain current
Drain-Source diode voltage
I
F
= 1 A,
V
in
= low
I
L(SC)
V
bb(AZ)
V
ON(CL)
T
jt
∆T
jt
E
AS
1.4
1.4
48
--
135
--
--
2.5
--
--
72
150
10
--
4.0
4.8
--
--
--
--
0.3
A
V
V
°C
K
J
T
A
= 25°C
V
OUT
>V
bb
-V
bb
-I
S
-V
ON
--
--
--
--
30
1
1.2
V
A
V
6) increase of standby current at T = 125°C caused by temperature sense current
j
7) while demagnetizing load inductance, dissipated energy is
E
= (V
AS
∫
ON(CL) * iL(t) dt,
2
VON(CL)
approx.
E
AS
= 1/2 * L * I * (
)
L
VON(CL)-Vbb
8) Requires 150
Ω
resistor in GND connection. Reverse load current (through intrinsic drain-source diode)
is normally limited by the connected load.
Semiconductor Group
3
BSP 550
Max allowable power dissipation
Ptot = f (TA,TSP)
Ptot [W]
16
14
12
Current limit characteristic
IL(SC) = f (Von),
(Von see testcircuit)
IL(SC) [A]
3 ,5
3
1 2 5 °C
2 ,5
2 5 °C
-2 5 °C
10
8
TS P
2
1 ,5
6
4
TA
2
0
0
25
50
75
100
125
1
0 ,5
0
0
5
10
15
20
25
TA, TSP[°C]
On state resistance (Vbb-pin to OUT pin)
RON = f (Tj);V
bb = 24 V;IL = 1.0 A
RON [Ω]
0.4
0.35
0.3
0.25
0.2
V
on
[V]
Typ. input current
IIN = f(VIN);
Vbb = 24 V
IIN [µA]
90
80
70
60
-25°C
25°C
98%
125°C
50
40
0.15
30
0.1
0.05
0
-50
-25
0
25
50
75
100
125
20
10
0
0
5
10
15
20
25
T
j
[°C]
V
IN
[V]
Semiconductor Group
4
BSP 550
Typ. overload current
IL(lim) = f (t),
Vbb=24V, no heatsink, Param.:Tjstart
IL(lim) [A]
Typ. operating current
IGND = f (Tj),
Vbb=30V, VIN=high
IGND [mA]
1
3
2.5
0.8
2
0.6
1.5
125°C
-25°C
0.4
1
0.2
0.5
0
-2
0
2
4
6
8
10 12 14 16 18
t [ms]
0
-25
0
25
50
75
100
125
Tj [°C]
Short circuit current
IL(SC) = f (Tj);V
bb = 30 V;
IL(SC) [Α]
3
Typ. standby current
Ibb(off) = f(Tj);
Vbb = 30 V, VIN = low
Ibb(off) [µA]
7
6
2,5
5
2
4
1,5
3
1
2
0,5
1
0
-25
0
0
25
50
75
100
125
-25
0
25
50
75
100
125
150
Tj [°C]
Tj [°C]
Semiconductor Group
5
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