1M
×
32-Bit Dynamic RAM Module
(2M
×
16-Bit Dynamic RAM Module)
HYM 321000S/GS-50/-60
Advanced Information
•
1 048 576 words by 32-bit organization
(alternative 2 097 152 words by 16-bit)
Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
Single + 5 V (± 10 %) supply
Low power dissipation
max 2200 mW active (-50 version)
max. 1980 mW active (-60 version)
CMOS – 11 mW standby
TTL
– 22 mW standby
CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh
2 decoupling capacitors mounted on substrate
All inputs, outputs and clock fully TTL compatible
72 pin Single in-Line Memory Module
Utilizes two 1M
×
16 -DRAMs in SOJ-42 packages
1024 refresh cycles/16 ms
Optimized for use in byte-write non-parity applications
Tin-Lead contact pads HYM 321000S
Gold-Lead contact pads HYM 321000GS
single sided module with 20.32 mm (800 mil) height
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Semiconductor Group
1
12.95
HYM 321000S/GS-50/-60
1M
×
32-Bit
The HYM 321000S/GS-50/-60 is a 4 MByte DRAM module organized as 1 048 576 words by
32-
bit in a 72-pin single-in-line package comprising two HYB 5118160BSJ 1M
×
16 DRAMs in 400 mil
wide SOJ-packages mounted together with two 0.2
µF
ceramic decoupling capacitors on a PC
board.
The HYM 321000S/GS-60/-70 can also be used as a 2 097 152 words by 16-bits dynamic RAM
module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, …, DQ15 and
DQ31, respectively.
Each HYB 5118160BSJ is described in the data sheet and is fully electrically tested and processed
according to Siemens standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.
The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 321000S/GS-50/-60 dictates the use of early write cycles.
Ordering Information
Type
HYM 321000S-50
HYM 321000S-60
HYM 321000GS-50
HYM 321000GS-60
Ordering Code
Q67100 - Q2051
Q67100 - Q2056
Q67100 - Q2053
Q67100 - Q2058
Package
L-SIM-72-10
L-SIM-72-10
L-SIM-72-10
L-SIM-72-10
Descriptions
DRAM module
(access time50 ns)
DRAM module
(access time 60 ns)
DRAM module
(access time 50 ns)
DRAM module
(access time 60 ns)
Semiconductor Group
2
HYM 321000S/GS-50/-60
1M
×
32-Bit
Pin Names
VSS
DQ16
DQ17
DQ18
DQ19
N.C.
A1
A3
A5
N.C.
DQ20
DQ21
DQ22
DQ23
N.C.
A8
N.C.
N.C.
1 DQ0
2
3 DQ1
4
5 DQ2
6
7 DQ3
8
9 VCC 10
11 A0
12
13 A2
14
15 A4
16
17 A6
18
19 DQ4 20
21 DQ5 22
23 DQ6 24
25 DQ7 26
27 A7
28
29 VCC 30
31 A9
32
33 RAS2 34
35 N.C. 36
A0-A9
DQ0-DQ31
CAS0 - CAS3
RAS0, RAS2
WE
Address Inputs
Data Input/Output
Column Address Strobe
Row Address Strobe
Read/Write Input
Power (+ 5 V)
Ground
Presence Detect Pin
No Connection
V
CC
V
SS
PD
N.C.
N.C.
VSS
CAS2
CAS1
N.C.
WE
DQ8
DQ9
DQ10
DQ11
DQ12
VCC
DQ13
DQ14
DQ15
PD0
PD2
N.C.
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
N.C. 38
CAS0 40
CAS3 42
RAS0 44
N.C. 46
N.C. 48
DQ24 50
DQ25 52
DQ26 54
DQ27 56
DQ28 58
DQ29 60
DQ30 62
DQ31 64
N.C. 66
PD1 68
PD3 70
VSS 72
Presence Detect Pins
-50
PD0
PD1
PD2
PD3
-60
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
N.C.
N.C.
Pin Configuration
Semiconductor Group
3
HYM 321000S/GS-50/-60
1M
×
32-Bit
RAS0
CAS0
CAS1
UCAS LCAS RAS
DQ0-DQ7
DQ8-DQ15
I/O1-I/O8
I/O9-I/O16
OE
D1
RAS2
CAS2
CAS3
UCAS LCAS RAS
DQ16-DQ23
DQ24-DQ31
I/O1-I/O8
I/O9-I/O16
OE
D2
A0 - A9
WE
VCC
VSS
C1 , C2
D1 , D2
D1 , D2
Block Diagram
Semiconductor Group
4
HYM 321000S/GS-50/-60
1M
×
32-Bit
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage ........................................................................... – 0.5 to min (Vcc + 0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 2.52 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
1)
T
A
= 0 to 70 °C;
V
CC
= 5 V
±
10 %
Parameter
Symbol
Limit Values
min.
Input high voltage
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
max.
5.5
0.8
–
0.4
10
10
V
V
V
V
µA
µA
Unit
Test
Condition
–
–
–
–
–
–
V
IH
V
IL
V
OH
V
OL
I
I(L)
I
O(L)
2.4
– 1.0
2.4
–
– 10
– 10
Average
V
CC
supply current:
I
CC1
HYM 321000S/GS-50
HYM 321000S/GS-60
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
–
–
–
–
400
360
mA
mA
2), 3),4)
I
CC2
4
mA
–
Average
V
CC
supply current during RAS
I
CC3
only refresh cycles:
HYM 321000S/GS-50
HYM 321000S/GS-60
(RAS cycling, CAS =
V
IH
, t
RC
=
t
RC
min.)
2),4)
–
–
–
400
360
mA
mA
Semiconductor Group
5
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