74HC2G125; 74HCT2G125
Dual buffer/line driver; 3-state
Rev. 5 — 17 March 2014
Product data sheet
1. General description
The 74HC2G125; 74HC2G125 are dual buffer/line drivers with 3-state outputs controlled
by the output enable inputs (nOE). Inputs include clamp diodes which enable the use of
current limiting resistors to interface inputs to voltages in excess of V
CC
.
2. Features and benefits
Wide supply voltage range from 2.0 V to 6.0 V
Input levels:
For 74HC2G125: CMOS level
For 74HCT2G125: TTL level
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from
40 C
to +85
C
and
40 C
to +125
C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC2G125DP
74HCT2G125DP
74HC2G125DC
74HCT2G125DC
74HC2G125GD
74HCT2G125GD
40 C
to +125
C
XSON8
40 C
to +125
C
VSSOP8
40 C
to +125
C
Name
TSSOP8
Description
plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
Version
SOT505-2
Type number
plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; body 3
2
0.5 mm
NXP Semiconductors
74HC2G125; 74HCT2G125
Dual buffer/line driver; 3-state
4. Marking
Table 2.
Marking codes
Marking code
[1]
H25
T25
H25
T25
H25
T25
Type number
74HC2G125DP
74HCT2G125DP
74HC2G125DC
74HCT2G125DC
74HC2G125GD
74HCT2G125GD
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
2
1A
1Y
6
2
6
1
1OE
1
EN1
1
5
2A
2Y
3
5
7
2
EN2
mce186
A
3
OE
Y
7
2OE
mce185
mna120
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram (one driver)
6. Pinning information
6.1 Pinning
74HC2G125
74HCT2G125
74HC2G125
74HCT2G125
1OE
1A
2Y
GND
1
2
3
4
001aae074
1OE
1A
8
7
6
5
V
CC
2OE
1Y
2A
GND
2Y
1
2
3
4
8
7
6
5
V
CC
2OE
1Y
2A
001aai333
Transparent top view
Fig 4.
Pin configuration SOT505-2 (TSSOP8) and
SOT765-1 (VSSOP8)
Fig 5.
Pin configuration SOT996-2 (XSON8)
74HC_HCT2G125
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 17 March 2014
2 of 15
NXP Semiconductors
74HC2G125; 74HCT2G125
Dual buffer/line driver; 3-state
6.2 Pin description
Table 3.
Symbol
1OE, 2OE
1A, 2A
GND
1Y, 2Y
V
CC
Pin description
Pin
1, 7
2, 5
4
6, 3
8
Description
output enable input (active LOW)
data input
ground (0 V)
data output
supply voltage
7. Functional description
Table 4.
Control
nOE
L
L
H
[1]
Function table
[1]
Input
nA
L
H
X
Output
nY
L
H
Z
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
<
0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5
V or V
O
> V
CC
+ 0.5 V
V
O
=
0.5
V to (V
CC
+ 0.5 V)
[1]
[1]
[1]
Min
0.5
-
-
-
-
70
65
Max
+7.0
20
20
35
70
-
+150
300
Unit
V
mA
mA
mA
mA
mA
C
mW
T
amb
=
40 C
to +125
C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP8 package: above 55
C
the value of P
tot
derates linearly with 2.5 mW/K.
For VSSOP8 package: above 110
C
the value of P
tot
derates linearly with 8 mW/K.
For XSON8 package: above 45
C
the value of P
tot
derates linearly with 2.4 mW/K.
74HC_HCT2G125
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 17 March 2014
3 of 15
NXP Semiconductors
74HC2G125; 74HCT2G125
Dual buffer/line driver; 3-state
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
t/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
74HC2G125
Min
2.0
0
0
40
-
-
-
Typ
5.0
-
-
+25
-
1.67
-
Max
6.0
V
CC
V
CC
+125
625
139
83
74HCT2G125
Min
4.5
0
0
40
-
-
-
Typ
5.0
-
-
+25
-
1.67
-
Max
5.5
V
CC
V
CC
+125
-
139
-
V
V
V
C
ns/V
ns/V
ns/V
Unit
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
C.
Symbol
Parameter
Conditions
T
amb
=
40 C
to +85
C
T
amb
=
40 C
to +125
C
Unit
Min
74HC2G125
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
I
O
=
6.0
mA; V
CC
= 4.5 V
I
O
=
7.8
mA; V
CC
= 6.0 V
V
OL
LOW-level output V
I
= V
IH
or V
IL
voltage
I
O
= 20
A;
V
CC
= 2.0 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 6.0 V
I
O
= 6.0 mA; V
CC
= 4.5 V
I
O
= 7.8 mA; V
CC
= 6.0 V
I
I
I
OZ
input leakage
current
V
I
= V
CC
or GND; V
CC
= 6.0 V
1.9
4.4
5.9
3.84
5.34
-
-
-
-
-
-
-
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
-
-
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
1.0
5.0
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
1.0
10
V
V
V
V
V
V
V
V
V
V
A
A
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Typ
Max
Min
Max
OFF-state output V
I
= V
IH
or V
IL
;
current
V
O
= V
CC
or GND; V
CC
= 6.0 V
74HC_HCT2G125
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 17 March 2014
4 of 15
NXP Semiconductors
74HC2G125; 74HCT2G125
Dual buffer/line driver; 3-state
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
C.
Symbol
I
CC
C
I
C
O
Parameter
supply current
input capacitance
output
capacitance
HIGH-level input
voltage
LOW-level input
voltage
HIGH-level
output voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
=
20 A
I
O
=
6.0
mA
V
OL
LOW-level output V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
voltage
I
O
= 20
A
I
O
= 6.0 mA
I
I
I
OZ
I
CC
I
CC
C
I
C
O
input leakage
current
V
I
= V
CC
or GND; V
CC
= 5.5 V
4.4
3.84
-
-
-
-
-
-
-
-
4.5
4.32
0
0.16
-
-
-
-
1.0
1.5
-
-
0.1
0.33
1.0
5.0
10
375
-
-
4.4
3.7
-
-
-
-
-
-
-
-
-
-
0.1
0.4
1.0
10
20
410
-
-
V
V
V
V
A
A
A
A
pF
pF
Conditions
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
T
amb
=
40 C
to +85
C
T
amb
=
40 C
to +125
C
Unit
Min
-
-
-
Typ
-
1.0
1.5
Max
10
-
-
Min
-
-
-
Max
20
-
-
A
pF
pF
74HCT2G125
V
IH
V
IL
V
OH
2.0
-
1.6
1.2
-
0.8
2.0
-
-
0.8
V
V
OFF-state output V
I
= V
IH
or V
IL
;
current
V
O
= V
CC
or GND; V
CC
= 5.5 V
supply current
additional supply
current
input capacitance
output
capacitance
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
per input; V
CC
= 4.5 V to 5.5 V;
V
I
= V
CC
2.1 V; I
O
= 0 A
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); C
L
= 50 pF unless otherwise specified; for test circuit see
Figure 8.
Symbol Parameter
74HC2G125
t
pd
propagation
delay
nA to nY; see
Figure 6
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
V
CC
= 6.0 V
[2]
Conditions
T
amb
=
40 C
to +85
C
T
amb
=
40 C
to +125
C
Unit
Min
Typ
[1]
Max
Min
Max
-
-
-
-
35
11
10
8
115
23
-
20
-
-
-
-
135
27
-
23
ns
ns
ns
ns
74HC_HCT2G125
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 17 March 2014
5 of 15
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