PRELIMINARY
CY7C1416BV18
CY7C1427BV18
CY7C1418BV18
CY7C1420BV18
36-Mbit DDR-II SRAM 2-Word Burst
Architecture
Features
• 36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36)
• 300-MHz clock for high bandwidth
• 2-Word burst for reducing address bus frequency
• Double Data Rate (DDR) interfaces
(data transferred at 600 MHz) @ 300 MHz for DDR-II
• Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
• Two input clocks for output data (C and C) to minimize
clock-skew and flight-time mismatches
• Echo clocks (CQ and CQ) simplify data capture in
high-speed systems
• Synchronous internally self-timed writes
• DDR-II operates with 1.5 cycle read latency when DLL
is enabled
• Operates like a DDR I device with 1 cycle read latency
in DLL off mode
• 1.8V core power supply with HSTL inputs and outputs
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4V–V
DD
)
• Available in 165-ball FBGA package (15 x 17 x 1.4 mm)
• Offered in both in lead-free and non lead-free packages
• JTAG 1149.1 compatible test access port
• Delay Lock Loop (DLL) for accurate data placement
Functional Description
The CY7C1416BV18, CY7C1427BV18, CY7C1418BV18 and
CY7C1420BV18 are 1.8V Synchronous Pipelined SRAM
equipped with DDR-II architecture. The DDR-II consists of an
SRAM core with advanced synchronous peripheral circuitry
and a 1-bit burst counter. Addresses for Read and Write are
latched on alternate rising edges of the input (K) clock. Write
data is registered on the rising edges of both K and K. Read
data is driven on the rising edges of C and C if provided, or on
the rising edge of K and K if C/C are not provided. Each
address location is associated with two 8-bit words in the case
of CY7C1416BV18 and two 9-bit words in the case of
CY7C1427BV18 that burst sequentially into or out of the
device. The burst counter always starts with a “0” internally in
the case of CY7C1416BV18 and CY7C1427BV18. On
CY7C1418BV18 and CY7C1420BV18, the burst counter
takes in the least significant bit of the external address and
bursts two 18-bit words in the case of CY7C1418BV18 and two
36-bit words in the case of CY7C1420BV18 sequentially into
or out of the device.
Asynchronous inputs include output impedance matching
input (ZQ). Synchronous data outputs (Q, sharing the same
physical pins as the data inputs D) are tightly matched to the
two output echo clocks CQ/CQ, eliminating the need for
separately capturing data from each individual DDR SRAM in
the system design. Output data clocks (C/C) enable maximum
system clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Configurations
CY7C1416BV18 – 4M x 8
CY7C1427BV18 – 4M x 9
CY7C1418BV18 – 2M x 18
CY7C1420BV18 – 1M x 36
Selection Guide
300 MHz
Maximum Operating Frequency
Maximum Operating Current (DDR-II)
300
825
278 MHz
278
775
250 MHz
250
700
200 MHz
200
600
167 MHz
167
500
Unit
MHz
mA
Cypress Semiconductor Corporation
Document Number: 001-07033 Rev. *B
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised September 20, 2006
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