T2526
Low-voltage IR Receiver ASSP
DATASHEET
Features
●
No external components except PIN diode
●
Supply-voltage range: 2.7V to 5.5V
●
Highest sensitivity due to automatic sensitivity adaption (AGC) and automatic
strong signal adaption (ATC)
●
Automatic supply voltage adaptation
●
Highest immunity against disturbances from daylight and lamps
●
Available for carrier frequencies between 30kHz to 56kHz; adjusted by zener-diode
fusing ±2.5%
●
TTL and CMOS compatible
Applications
●
Home entertainment applications (audio/video)
●
Home appliances
●
Remote control equipment
4597J-AUTO-04/14
1.
Description
The Atmel
®
IC T2526 is a complete IR receiver for data communication developed and optimized for use in carrier-
frequency-modulated transmission applications. The IC offers highest sensitivity as well as highest suppression of noise
from daylight and lamps. The Atmel T2526 is available with broadest range of frequencies (30, 33, 36, 37, 38, 40, 44, 56kHz)
and 3 different noise suppression regulation types (standard, lamp, short burst) covering requirements of high-end remote
control solutions (please refer to selection guide available for Atmel T2525/T2526). Atmel The T2526 operates in a supply
voltage range of 2.7V to 5.5V.
The function of the Atmel T2526 can be described using the block diagram of
Figure 1-1 on page 2.
The input stage meets
two main functions. First it provides a suitable bias voltage for the PIN diode. Secondly the pulsed photo-current signals are
transformed into a voltage by a special circuit which is optimized for low noise applications. After amplification by a controlled
gain amplifier (CGA) the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f
0
which is
equivalent to the chosen carrier frequency of the input signal The demodulator is used first to convert the input burst signal to
a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the
output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the
present environmental conditions (ambient light, modulated lamps etc.). Other special features are used to adapt to the
current application to secure best transmission quality.
Figure 1-1. Block Diagram
VS
IN
Input
CGA and
filter
OUT
Demodulator
Micro-
controller
Oscillator
Carrier frequency f
0
AGC/ATC
and digital control
T2526
Modulated IR signal
min 6 or 10 pulses
GND
2.
Pin Description
Table 2-1.
Pin Description
Function
Supply voltage
Data output
Input PIN-diode
Ground
Symbol
VS
OUT
IN
GND
2
T2526 [DATASHEET]
4597J–AUTO–04/14
3.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameter
Supply voltage
Supply current
Input voltage
Input DC current at V
S
= 5V
Output voltage
Output current
Operating temperature
Storage temperature
Power dissipation at T
amb
= 25°C
Symbol
V
S
I
S
V
IN
I
IN
V
O
I
O
T
amb
T
stg
P
tot
Value
–0.3 to +6
3
–0.3 to V
S
0.75
–0.3 to V
S
10
–25 to +85
–40 to +125
30
Unit
V
mA
V
mA
V
mA
°C
°C
mW
4.
No.
1
1.1
1.2
2
2.1
2.2
2.3
2.4
3
3.1
3.2
3.3
Electrical Characteristics, 3-V Operation
Parameters
Supply
Supply-voltage range
Supply current
Output
Internal pull-up resistor
(1)
Output voltage low
Output voltage high
Output current clamping
Input
Input DC current
Input DC current
See
Figure 6-3 on page 6
Minimum detection
threshold current
See
Figure 6-1 on page 6
Minimum detection
threshold current with AC
current disturbance
IIN_AC100 =
3µA at 100Hz
V
IN
= 0
See
Figure 6-10 on page 9
V
IN
= 0; Vs = 3V
T
amb
= 25°C
Test signal:
See
Figure 6-9 on page 9
V
S
= 3V
T
amb
= 25°C, I
IN_DC
=1µA
square pp
burst N = 16
f = f
0
; t
PER
= 10ms
Figure 6-8 on page 8
BER = 50
(2)
I
IN_DCMAX
I
IN_DCMAX
I
Eemin
–150
–350
–700
µA
µA
pA
C
B
B
R
2
= 0
See
Figure 6-10 on page 9
T
amb
= 25°C
See
Figure 6-10 on page 9
R
2
= 2.4 k
See
Figure 6-10 on page 9
R
PU
V
OL
V
OH
I
OCL
V
S
– 0.25
8
30/40
250
Vs
k
mV
V
mA
A
B
B
B
I
IN
=0
V
S
I
S
2.7
0.7
3.0
0.9
3.3
1.3
V
mA
C
B
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
T
amb
= 25°C, V
S
= 3V unless otherwise specified.
3.4
I
Eemin
–1300
pA
C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1.
2.
3.
Depending on version, see “Ordering Information”
BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
After transformation of input current into voltage
T2526 [DATASHEET]
4597J–AUTO–04/14
3
4.
No.
Electrical Characteristics, 3-V Operation (Continued)
Parameters
Test Conditions
Test signal:
See
Figure 6-9 on page 9
V
S
= 3V, T
amb
= 25°C
I
IN_DC
= 1µA
square pp
burst N = 16
f = f
0
; t
PER
= 10ms
Figure 6-8 on page 8
BER = 5%
(2)
Symbol
Min.
Typ.
Max.
Unit
Type*
T
amb
= 25°C, V
S
= 3V unless otherwise specified.
3.5
Maximum detection
threshold current with
V
IN
> 0V
I
Eemax
–200
µA
D
4
4.1
4.2
4.3
4.4
4.5
4.6
4.7
Controlled Amplifier and Filter
Maximum value of variable
gain (CGA)
Minimum value of variable
gain (CGA)
Total internal
amplification
(3)
Center frequency fusing
accuracy of bandpass
Overall accuracy center
frequency of bandpass
Overall accuracy center
frequency of bandpass
BPF bandwidth
T
amb
= 0 to 70°C
–3dB; f
0
= 38kHz;
See
Figure 6-7 on page 8
V
S
= 3V, T
amb
= 25°C
G
VARMAX
G
VARMIN
G
MAX
f
03V_FUSE
f
03V
f
03V
B
–2.5
–5.5
–4.5
51
–5
71
f
0
f
0
f
0
3.8
+2.5
+3.5
+3.0
dB
dB
dB
%
%
%
kHz
D
D
D
A
C
C
C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1.
2.
3.
Depending on version, see “Ordering Information”
BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
After transformation of input current into voltage
5.
No.
5
5.1
5.2
6
6.1
6.2
6.3
Notes:
Electrical Characteristics, 5-V Operation
Parameters
Supply
Supply-voltage range
Supply current
Output
Internal pull-up resistor
(1)
Output voltage low
Output voltage high
1.
2.
3.
Depending on version, see “Ordering Information”
BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
After transformation of input current into voltage
T
amb
= 25°C
See
Figure 6-10 on page 9
R
2
= 2.4 k
See
Figure 6-10 on page 9
R
PU
V
OL
V
OH
V
S
– 0.25
30/40
250
Vs
k
mV
V
A
B
B
I
IN
=0
V
S
I
S
4.5
0.9
5.0
1.2
5.5
1.6
V
mA
C
B
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
T
amb
= 25°C, V
S
= 5V unless otherwise specified.
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
4
T2526 [DATASHEET]
4597J–AUTO–04/14
5.
No.
6.4
7
7.1
7.2
7.3
Electrical Characteristics, 5-V Operation (Continued)
Parameters
Output current clamping
Input
Input DC current
V
IN
= 0
See
Figure 6-10 on page 9
I
IN_DCMAX
I
IN_DCMAX
I
Eemin
–400
–700
–850
µA
µA
pA
C
B
B
Test Conditions
R
2
= 0
See
Figure 6-10 on page 9
Symbol
I
OCL
Min.
Typ.
8
Max.
Unit
mA
Type*
B
T
amb
= 25°C, V
S
= 5V unless otherwise specified.
Input DC-current
V
IN
= 0; Vs = 5V
See
Figure 6-4 on page 7
T
amb
= 25°C
Min. detection threshold Test signal:
current
See
Figure 6-9 on page 9
See
Figure 6-2 on page 6
V
S
= 5V
T
amb
= 25°C
I
IN_DC
= 1µA
Min. detection threshold square pp
current with AC current burst N = 16
disturbance IIN_AC100 = f = f ; t
0 PER
= 10ms
3 µA at 100 Hz
Figure 6-8 on page 8
BER = 50
(2)
Test signal:
See
Figure 6-9 on page 9
V
S
= 5V, T
amb
= 25C,
I
= 1µA
Max. detection threshold
IN_DC
square pp
current with V
IN
> 0V
burst N = 16
f = f
0
; t
PER
= 10ms
Figure 6-8 on page 8
BER = 5%
(2)
Controlled Amplifier and Filter
Maximum value of
variable gain (CGA)
Minimum value of
variable gain (CGA)
Total internal
amplification
(3)
Resulting center
frequency fusing
accuracy
1.
2.
3.
f
0
fused at V
S
= 3V
V
S
= 5V, T
amb
= 25°C
7.4
I
Eemin
–2000
pA
C
7.5
I
Eemax
–500
µA
D
8
8.1
8.2
8.3
8.4
G
VARMAX
G
VARMIN
G
MAX
f
05V
51
–5
71
f
03V-FUSE
+ 0.5
dB
dB
dB
%
D
D
D
A
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
Depending on version, see “Ordering Information”
BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
After transformation of input current into voltage
5.1
ESD
All pins
2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7
5.2
Reliability
Electrical qualification (1000h) in molded plastic package
T2526 [DATASHEET]
4597J–AUTO–04/14
5
FPGA/CPLD
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