LITE
ON
POWER
SEMICONDUCTOR
SMB SERIES
STAND-OFF VOLTAGE -
6.8
to
200
Volts
POWER DISSIPATION -
600
WATTS
SURFACE MOUNT
UNIDIRECTIONAL AND BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSORS
FEATURES
Rating to 200V VBR
For surface mounted applications
Reliable low cost construction utilizing molded plastic
technique
Plastic material has UL flammability classification
94V-O
Typical IR less than 1uA above 10V
Fast response time: typically less than 1.0ps for
Uni-direction,less than 5.0ns for Bi-direction,form 0
Volts to BV min
SMB
SMB
A
DIM.
A
B
B
C
C
D
E
G
F
F
E
D
G
H
MIN.
4.06
3.30
1.96
0.15
5.21
0.05
2.01
0.76
MAX.
4.57
3.94
2.21
0.31
5.59
0.20
2.62
1.52
MECHANICAL DATA
Case : Molded plastic
Polarity : by cathode band denotes uni-directional
device none cathode band denotes bi-directional device
Weight : 0.003 ounces, 0.093 gram
H
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
PEAK POWER DISSIPATION AT T
A
= 25 C,
T
P
= 1ms (Note 1,2)
Peak Forward Surge Current 8.3ms
single half sine-wave super imposed
on rated load (Note 3)
(JEDEC METHOD)
Steady State Power Dissipation at T
L
=75 C
SYMBOLS
VALUE
UNIT
P
PK
Minimum 600
WATTS
I
FSM
100
AMPS.
P
M(AV)
5.0
WATTS
Maximum Instantaneous forward voltage
at 50A for unidirectional devices only (Note 3)
V
F
SEE NOTE 4
Volts
Operating Temperature Range
T
J
-55 to +150
C
Storage Temperature Range
T
STG
-55 to +175
C
REV. 1, 24-May-2000
NOTES : 1. Non-repetitive current pulse, per fig. 3 and derated above T
A
= 25 C per fig.1.
2. Thermal Resistance junction to Lead
3. 8.3ms single half-sine wave duty cycle= 4 pulses maximum per minute (unidirectional units only).
4. V
F
= 3.5V on SMB6.8 thru SMB90A devices and V
F
= 5.0V on SMB100 thru SMB200A devices.
RATING AND CHARACTERISTIC CURVES
SMB SERIES
LITE
ON
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - PULSE DERATING CURVE
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT
100
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
120
100
80
60
40
20
0
1
2
5
10
20
50
100
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
75
50
25
10 X 1000 WAVEFORM AS
DEFINED BY R.E.A.
0
0
25
50
75
100
125
150
175
200
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - PULSE WAVEFORM
T
R
=10us
10000
FIG.4 - TYPICAL JUNCTION CAPACITANCE
I
P
PEAK PULSE CURRENT , (%)
100
Peak value (I
RSM)
Half value=
2
CAPACITANCE , (pF)
I
RSM
Pulse width (T
P
) is defined
as that point where the
peak current decays to
50% of I
RSM
Uni-directional
T
J
= 25 C
1000
Bi-directional
50
T
J
=25 C
10 x 1000 waveform as
defined by R.E.A.
100
TP
0
0
1.0
2.0
3.0
4.0
10
1
10
100
1000
T, TIME ( ms )
STAND-OFF VOLTAGE, VOLTS
100
T
A
=150 C
PM
(AV)
STEADY STATE POWER DISSIPATION (W)
FIG.5 - PULSE RATING CURVE
FIG.6 - STEADY STATE POWER DERATING CURVE
5.0
P
P
, PEAK POWER ( K
W
)
4.0
10
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG 3.
3.0
2.0
1.0
5.0mm LEAD AREAS
1.0
60Hz RESISTIVE OR
INDUCTIVE LOAD
0.1
0.1us
1.0us
10us
100us
1.0ms
10ms
0.0
0
25
50
75
100
125
150
175
200
T
P
, PULSE WIDTH
TL, LEAD TEMPERATURE
REV. 1, 24-May-2000
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