AP9987GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Single Drive Requirement
▼
Fast Switching Performance
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
80V
90mΩ
15A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9987GJ) are
available for low-profile applications.
G D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
80
+25
15
9
50
34.7
0.28
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
3.6
62.5
110
Units
℃/W
℃/W
℃/W
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1
200908192
AP9987GH/J-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=7A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=10A
V
DS
=80V, V
GS
=0V
V
GS
=+25V, V
DS
=0V
I
D
=10A
V
DS
=64V
V
GS
=4.5V
V
DS
=40V
I
D
=10A
R
G
=3.3Ω,V
GS
=10V
R
D
=4Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
80
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
15
-
-
-
11
3
6
8
12
19
3
980
75
50
1.1
Max. Units
-
90
105
3
-
10
250
+100
18
-
-
-
-
-
-
1570
-
-
1.7
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=64V ,V
GS
=0V
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=10A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
33
44
Max. Units
1.2
-
-
V
ns
nC
t
rr
Q
rr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9987GH/J-HF
30
30
T
C
=25
o
C
I
D
, Drain Current (A)
20
I
D
, Drain Current (A)
10V
7 .0V
5.0V
4.5V
T
C
=150
o
C
10V
7 .0V
5.0V
4.5V
20
V
G
=3.0V
10
V
G
=3.0V
10
0
0
0
3
6
9
12
0
3
6
9
12
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
180
1.9
I
D
=7A
T
C
=25
o
C
R
DS(ON)
(m
Ω
)
140
1.6
Normalized R
DS(ON)
I
D
= 10 A
V
G
=10V
1.3
1.0
100
0.7
60
t
rr
0.4
2
4
6
8
10
-50
0
50
100
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Q
rr
150
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
8
Normalized V
GS(th)
(V)
1.2
I
S
(A)
6
T
j
=150 C
o
T
j
=25 C
o
4
0.8
2
0
0
0.2
0.4
0.6
0.8
1
1.2
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9987GH/J-HF
f=1.0MHz
16
10000
I
D
= 10 A
V
GS
, Gate to Source Voltage (V)
12
8
C (pF)
V
DS
= 4 0V
V
DS
= 50 V
V
DS
= 64 V
1000
C
iss
100
4
C
oss
C
rss
0
0
5
10
15
20
25
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100.0
1
Operation in this
area limited by
R
DS(ON)
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
10.0
100us
0.2
I
D
(A)
0.1
0.1
0.05
1ms
1.0
P
DM
0.02
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
o
T
C
=25 C
Single Pulse
0.1
0.1
1
10
10ms
100ms
DC
0.01
Single Pulse
0.01
100
1000
0.00001
0.0001
0.001
0.01
0.1
V
DS
, Drain-to-Source Voltage (V)
Q
rr
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
V
DS
=5V
I
D
, Drain Current (A)
V
G
Q
G
20
T
j
=25
o
C
T
j
=150
o
C
4.5V
Q
GS
Q
GD
10
Charge
0
0
2
4
6
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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