AP9970GK-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower Gate Charge
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
SOT-223
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
S
D
G
60V
50mΩ
5.8A
I
D
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, low on-resistance and cost-
effectiveness.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
60
+20
5.8
4.6
30
2.8
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
45
Unit
℃/W
1
201204252
Data and specifications subject to change without notice
AP9970GK-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
o
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
60
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.05
-
-
-
5
-
-
-
11.5
2.5
6
6
5
22.5
6
910
95
70
1.2
Max. Units
-
-
50
60
3
-
1
25
+100
15
-
-
-
-
-
-
1450
-
-
1.8
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=60V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=5A
V
DS
=48V
V
GS
=4.5V
V
DS
=30V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=30Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=48V ,V
GS
=0V
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=2.1A, V
GS
=0V
I
S
=5A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
25
31
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Time
2
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 120
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9970GK-HF
30
30
T
A
=25 C
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
T
A
=150
o
C
10V
7.0V
5.0V
4.5V
20
20
10
10
V
G
=3.0V
V
G
=3.0V
0
0
1
2
3
4
5
0
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.8
I
D
=3A
T
A
=25 C
Normalized R
DS(ON)
o
I
D
=5A
V
G
=10V
R
DS(ON)
(m
Ω
)
80
1.4
60
1.0
20
40
2
4
6
8
10
0.6
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
60.0
10
8
V
GS
=4.5V
R
DS(ON)
(m
Ω
)
50.0
I
S
(A)
6
T
j
=150
o
C
T
j
=25
o
C
4
V
GS
=10V
40.0
2
0
0
0.4
0.8
1.2
30.0
0
10
20
30
V
SD
, Source-to-Drain Voltage (V)
I
D
, Drain Current (A)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. On-Resistance vs.
Drain Current
3
AP9970GK-HF
f=1.0MHz
12
10000
V
GS
, Gate to Source Voltage (V)
10
8
6
C (pF)
I
D
=5A
V
DS
=32V
V
DS
=40V
V
DS
=48V
1000
C
iss
4
100
C
oss
C
rss
2
0
0
5
10
15
20
25
30
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
0.2
100us
I
D
(A)
1ms
1
0.1
0.1
0.05
0.02
0.01
10ms
100ms
1s
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 120℃/W
0.1
T
A
=25 C
Single Pulse
0.01
0.1
1
10
o
DC
0.001
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
V
DS
=5V
o
o
V
G
Q
G
4.5V
Q
GS
Q
GD
I
D
, Drain Current (A)
20
T
j
=25 C
T
j
=150 C
10
Charge
0
0
2
4
6
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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