RURD840, RURD860, RURD840S, RURD860S
Data Sheet
January 2000
File Number
4033.1
8A, 400V - 600V Ultrafast Diodes
The RURD840, RURD860, RURD840S and RURD860S are
ultrafast dual diodes with soft recovery characteristics
(t
rr
< 60ns). They have low forward voltage drop and are
silicon nitride passivated ion-implanted epitaxial planar
construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA09616.
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <60ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RURD840
RURD860
RURD840S
RURD860S
PACKAGE
TO-251
TO-251
TO-252
TO-252
BRAND
RUR840
RUR860
RUR840
RUR860
Packaging
JEDEC STYLE TO-251
ANODE
CATHODE
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in tape and reel, e.g. RURD860S9A.
CATHODE
(FLANGE)
Symbol
K
JEDEC STYLE TO-252
CATHODE
(FLANGE)
CATHODE
ANODE
A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RURD840
RURD840S
400
400
400
8
16
40
75
20
-65 to 175
300
260
RURD860
RURD860S
600
600
600
8
16
40
75
20
-65 to 175
300
260
UNITS
V
V
V
A
A
A
W
mJ
o
C
o
C
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 155
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
1
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RURD840, RURD860, RURD840S, RURD860S
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
RURD840, RURD840S
SYMBOL
V
F
I
F
= 8A
I
F
= 8A, T
C
= 150
o
C
I
R
V
R
= 400V
V
R
= 600V
V
R
= 400V, T
C
= 150
o
C
V
R
= 600V, T
C
= 150
o
C
t
rr
I
F
= 1A, dI
F
/dt = 200A/µs
I
F
= 8A, dI
F
/dt = 200A/µs
t
a
t
b
Q
RR
C
J
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θJC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
I
F
= 8A, dI
F
/dt = 200A/µs
I
F
= 8A, dI
F
/dt = 200A/µs
I
F
= 8A, dI
F
/dt = 200A/µs
V
R
= 10V, I
F
= 0A
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
32
21
195
25
-
MAX
1.5
1.3
100
-
500
-
60
70
-
-
-
-
2
RURD860, RURD860S
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
32
21
195
25
-
MAX
1.5
1.3
-
100
-
500
60
70
-
-
-
-
2
UNITS
V
V
µA
µA
µA
µA
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
40
I
R
, REVERSE CURRENT (µA)
I
F
, FORWARD CURRENT (A)
500
100
175
o
C
10
10
100
o
C
1
100
o
C
175
o
C
1
0.5
25
o
C
0.1
25
o
C
0.01
0
0.5
1
1.5
2
2.5
0
100
200
300
400
500
600
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
RURD840, RURD860, RURD840S, RURD860S
Typical Performance Curves
60
T
C
= 25
o
C, dI
F
/dt = 200A/µs
50
t, RECOVERY TIMES (ns)
40
30
20
10
0
0.5
trr
t, RECOVERY TIMES (ns)
80
(Continued)
100
T
C
= 100
o
C, dI
F
/dt = 200A/µs
60
trr
ta
tb
40
ta
20
tb
1
I
F
, FORWARD CURRENT (A)
4
8
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
8
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
125
T
C
= 175
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
100
trr
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
8
DC
6
SQ. WAVE
4
75
50
ta
tb
2
25
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
8
0
140
145
150
155
160
165
170
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
100
C
J
, JUNCTION CAPACITANCE (pF)
80
60
40
20
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3
RURD840, RURD860, RURD840S, RURD860S
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 8. t
rr
TEST CIRCUIT
I = 1A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
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ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
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