= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (See Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
R
θJC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy (See Figures 7 and 8).
pw = pulse width.
D = duty cycle.
I
F
= 150A, dI
F
/d t = 100A/µs
I
F
= 150A, dI
F
/dt = 100A/µs
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RURU15080
RURU15090
RURU150100
TYP MAX
-
-
-
-
-
-
-
-
-
-
-
-
100
75
-
1.9
1.7
-
-
-
500
-
-
-
3.0
125
200
-
-
0.4
UNITS
V
V
µA
µA
µA
µA
mA
mA
mA
mA
ns
ns
ns
ns
o
C/W
TYP MAX MIN
-
-
-
-
-
-
-
-
-
-
-
-
100
75
-
1.9
1.7
500
-
-
-
3.0
-
-
-
125
200
-
-
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX MIN
-
-
-
-
-
-
-
-
-
-
-
-
100
75
-
1.9
1.7
-
500
-
-
-
3.0
-
-
125
200
-
-
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX MIN
-
-
-
-
-
-
-
-
-
-
-
-
100
75
-
1.9
1.7
-
-
500
-
-
-
3.0
-
125
200
-
-
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
R
1
L
1
= SELF INDUCTANCE OF R
4
+ L
LOOP
Q
1
+V
1
0
t
2
t
1
R
2
+V
3
Q
2
t
1
≥
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
t
A(MIN)
≤
R
4
10
L
LOOP
DUT
Q
4
0
0.25 I
RM
C1
R
4
I
RM
I
F
dI
F
dt
t
RR
t
A
t
B
t
3
0
-V
2
R
3
Q
3
-V
4
V
R
V
RM
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
5-2
RURU15070, RURU15080, RURU15090, RURU150100
Typical Performance Curves
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT
FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES
IMAX = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI
2
[VAVL/(VAVL - V
DD
)]
Q
1
& Q
2
ARE 1000V MOSFETs
Q
1
L
R +
V
DD
130Ω
1MΩ
DUT
VAVL
12V
Q
2
130Ω
CURRENT
SENSE
V
DD
-
I
L
I V
I
L
12V
t
0
t
1
t
2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
5-3
RURU15070, RURU15080, RURU15090, RURU150100
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
