AP4523GH
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Good Thermal Performance
▼
Fast Switching Performance
▼
RoHS Compliant
S1
G1
D1/D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
40V
45mΩ
13A
-40V
60mΩ
-11A
D2
S2
G2
P-CH BV
DSS
TO-252-4L
R
DS(ON)
I
D
D1
G1
G2
S1
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
3
Rating
N-channel
40
±10
13
8.1
50
7.8
0.0625
-55 to 150
-55 to 150
P-channel
-40
±20
-11
-7
-50
Units
V
V
A
A
A
W
W/℃
℃
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
3
3
Value
Max.
Max.
12
110
Unit
℃/W
℃/W
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
201124051-1/7
AP4523GH
N-CH Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
o
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
40
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.01
-
-
-
7
-
-
-
8
2
4
6
18
18
3
600
85
60
2
Max. Units
-
-
45
60
3
-
1
25
±30
13
-
-
-
-
-
-
900
-
-
3
V
V/℃
mΩ
mΩ
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=8A
V
GS
=4.5V, I
D
=6A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=7A
V
DS
=40V, V
GS
=0V
V
DS
=32V, V
GS
=0V
V
GS
=±10V
I
D
=7A
V
DS
=30V
V
GS
=4.5V
V
DS
=20V
I
D
=7A
R
G
=3.3Ω,V
GS
=10V
R
D
=2.85Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=7A, V
GS
=0V
I
S
=7A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
16
9
Max. Units
1.3
-
-
V
ns
nC
2/7
AP4523GH
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Test Conditions
V
GS
=0V, I
D
=-250uA
Reference to 25℃,I
D
=-1mA
V
GS
=-10V, I
D
=-7A
V
GS
=-4.5V, I
D
=-5A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-5A
V
DS
=-40V, V
GS
=0V
V
DS
=-32V, V
GS
=0V
V
GS
=±20V
I
D
=-5A
V
DS
=-25V
V
GS
=-4.5V
V
DS
=-20V
I
D
=-5A
R
G
=3.3Ω,V
GS
=-10V
R
D
=4Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
2
Min.
-40
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.01
-
-
-
5
-
-
-
12
2
6
8
14
27
15
820
140
110
5
Max. Units
-
-
60
75
-3
-
-1
-25
±100
19
-
-
-
-
-
-
1310
-
-
7.5
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
o
C)
j
=25
Drain-Source Leakage Current (T
o
C)
j
=70
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=-5A, V
GS
=0V
I
S
=-5A, V
GS
=0V
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
21
14
Max. Units
-1.3
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .
3/7
AP4523GH
N-Channel
30
30
T
A
= 25
o
C
25
I
D
, Drain Current (A)
20
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
V
G
=3.0V
T
A
= 150
o
C
25
10V
7.0V
5.0V
4.5V
20
15
15
V
G
=3.0V
10
10
5
5
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
1.8
I
D
=8A
V
G
=10V
I
D
=6A
R
DS(ON)
(m
Ω
)
T
A
=25 C
Normalized R
DS(ON)
10
1.5
o
55
1.2
0.9
30
2
4
6
8
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
12
10
1.3
8
T
j
=150
o
C
I
S
(A)
6
T
j
=25
o
C
Normalized V
GS(th)
(V)
1.1
0.9
4
0.7
2
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
AP4523GH
N-Channel
f=1.0MHz
16
1000
V
GS
, Gate to Source Voltage (V)
C
iss
12
I
D
=7A
V
DS
=30V
C (pF)
100
8
C
oss
C
rss
4
0
0
5
10
15
20
10
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
I
D
(A)
100us
0.1
0.1
0.05
0.02
P
DM
1
t
T
0.01
T
A
=25
o
C
Single Pulse
0.1
0.1
1
10
1ms
10ms
100ms
1s
DC
100
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
V
DS
=5V
25
V
G
T
j
=25
o
C
T
j
=150
o
C
I
D
, Drain Current (A)
Q
G
4.5V
20
15
Q
GS
Q
GD
10
5
Charge
0
0
2
4
6
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
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