PZUxB series
Single Zener diodes in a SOD323F package
Rev. 02 — 15 November 2009
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface
Mounted Device (SMD) plastic package.
1.2 Features
Total power dissipation:
≤
310 mW
Tolerance series: B: approximately
±5
%; B1, B2, B3: sequential, approximately
±2
%
Small plastic package suitable for surface mounted design
Wide working voltage range: nominal 2.4 V to 36 V
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
V
F
P
tot
Quick reference data
Parameter
forward voltage
total power dissipation
Conditions
I
F
= 100 mA
T
amb
≤
25
°C
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
1.1
310
550
Unit
V
mW
mW
[1]
[2]
[3]
Pulse test: t
p
≤
300
μs; δ ≤
0.02
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm
2
.
NXP Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Symbol
1
2
sym068
[1]
The marking bar indicates the cathode
3. Ordering information
Table 3.
Ordering information
Package
Name
PZU2.4B to
PZU36B
[1]
[1]
Type number
Description
plastic surface mounted package; 2 leads
Version
SOD323F
SC-90
The series consists of 97 types with nominal working voltages from 2.4 V to 36 V.
4. Marking
Table 4.
Marking codes
Marking code
B
PZU2.4
PZU2.7
PZU3.0
PZU3.3
PZU3.6
PZU3.9
PZU4.3
PZU4.7
PZU5.1
PZU5.6
PZU6.2
PZU6.8
PZU7.5
PZU8.2
PZU9.1
G3
G4
G5
G6
G7
G8
G9
GA
GB
GC
GD
GE
GF
GG
GH
B1
-
F3
F4
F5
F6
F7
F8
F9
FA
FB
FC
FD
FE
FF
FG
B2
-
H1
H2
H3
H4
H5
H6
H7
H8
H9
HA
HB
HC
HD
HE
B3
-
-
-
-
-
-
HS
HT
HU
HV
HW
HX
HY
HZ
KA
PZU10
PZU11
PZU12
PZU13
PZU14
PZU15
PZU16
PZU18
PZU20
PZU22
PZU24
PZU27
PZU30
PZU33
PZU36
Type number
Marking code
B
GJ
GK
GL
GM
-
GN
GP
GQ
GR
GS
GT
GU
GV
GW
GX
B1
FH
FJ
FK
FL
-
FM
FN
FP
FQ
FR
FS
-
-
-
-
B2
HF
HG
HH
HJ
HK
HL
HM
HN
HP
HQ
HR
-
-
-
-
B3
KB
KC
KD
KE
-
KF
KG
KH
KJ
KK
KL
-
-
-
-
Type number
PZUXB_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 15 November 2009
2 of 12
NXP Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
P
ZSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
Parameter
forward current
non-repetitive peak reverse
current
non-repetitive peak reverse
power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-
[1]
Max
200
see
Table 8
and
9
40
310
550
150
+150
+150
Unit
mA
-
-
-
-
−65
−65
W
mW
mW
°C
°C
°C
T
amb
≤
25
°C
[2]
[3]
t
p
= 100
μs;
square wave; T
j
= 25
°C
prior to surge
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
400
230
55
Unit
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm
2
.
Soldering point of cathode tab
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 10 mA
I
F
= 100 mA
[1]
Pulse test: t
p
≤
300
μs; δ ≤
0.02
[1]
[1]
Min
-
-
Typ
-
-
Max
0.9
1.1
Unit
V
V
PZUXB_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 15 November 2009
3 of 12
NXP Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
Table 8.
Characteristics per type; PZU2.4B to PZU5.6B3
T
j
= 25
°
C unless otherwise specified
PZU
xxx
Sel Working
voltage
V
Z
(V);
I
Z
= 5 mA
Min
2.4
2.7
B
B
2.3
2.5
Max
2.6
2.9
2.75
2.9
3.20
3.05
3.20
3.50
3.35
3.50
3.80
3.65
3.80
4.10
3.97
4.10
4.48
4.21
4.34
4.48
4.90
4.61
4.75
4.90
5.37
5.04
5.20
5.37
5.92
5.55
5.73
5.92
100
40
1
2.5
1.9
275
5.5
250
60
2
1.5
0.3
300
5.5
800
80
2
1
−1.4
325
8
1000
90
3
1
−2.5
350
8
1000
90
3
1
−2.5
370
8
1000
90
5
1
−2.4
390
8
1000
95
5
1
−2.4
410
8
1000
95
10
1
−2.1
425
8
Maximum differential
resistance
r
dif
(Ω)
I
Z
= 0.5 mA I
Z
= 5 mA
1000
1000
100
100
Reverse
current
I
R
(μA)
Max
50
20
Temperature Diode
coefficient
capacitance
S
Z
(mV/K);
C
d
(pF)
[1]
I
Z
= 5 mA
Max
450
440
−1.6
−2.0
Non-repetitive peak
reverse current
I
ZSM
(A)
[2]
Max
8
8
V
R
(V) Typ
1
1
B1 2.5
B2 2.65
3.0
B
2.80
B1 2.80
B2 2.95
3.3
B
3.10
B1 3.10
B2 3.25
3.6
B
3.40
B1 3.40
B2 3.55
3.9
B
3.70
B1 3.70
B2 3.87
4.3
B
4.01
B1 4.01
B2 4.15
B3 4.28
4.7
B
4.42
B1 4.42
B2 4.55
B3 4.69
5.1
B
4.84
B1 4.84
B2 4.98
B3 5.14
5.6
B
5.31
B1 5.31
B2 5.49
B3 5.67
[1]
[2]
f = 1 MHz; V
R
= 0 V
t
p
= 100
μs;
square wave; T
j
= 25
°C
prior to surge
PZUXB_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 15 November 2009
4 of 12
NXP Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
Table 9.
Characteristics per type; PZU6.2B to PZU36B
T
j
= 25
°
C unless otherwise specified
PZU
xxx
Sel Working
voltage
V
Z
(V);
I
Z
= 5 mA
Min
6.2
B
5.86
B1 5.86
B2 6.06
B3 6.26
6.8
B
6.47
B1 6.47
B2 6.65
B3 6.86
7.5
B
7.06
B1 7.06
B2 7.28
B3 7.52
8.2
B
7.76
B1 7.76
B2 8.02
B3 8.28
9.1
B
8.56
B1 8.56
B2 8.85
B3 9.15
10
B
9.45
B1 9.45
B2 9.77
B3 10.11
11
B
10.44
B1 10.44
B2 10.76
B3 11.10
12
B
11.42
B1 11.42
B2 11.74
B3 12.08
13
B
12.47
B1 12.47
B2 12.91
B3 13.37
14
B2 13.70
Max
6.53
6.12
6.33
6.53
7.14
6.73
6.93
7.14
7.84
7.36
7.60
7.84
8.64
8.10
8.36
8.64
9.55
8.93
9.23
9.55
10.55
9.87
10.21
10.55
11.56
10.88
11.22
11.56
12.60
11.90
12.24
12.60
13.96
13.03
13.49
13.96
14.30
80
10
100
11
10.4
101
2
© NXP B.V. 2009. All rights reserved.
Maximum differential
resistance
r
dif
(Ω)
I
Z
= 0.5 mA I
Z
= 5 mA
80
30
Reverse
current
I
R
(nA)
Max
500
Temperature Diode
coefficient
capacitance
S
Z
(mV/K);
C
d
(pF)
[1]
I
Z
= 5 mA
Max
250
2.7
Non-repetitive peak
reverse current
I
ZSM
(A)
[2]
Max
5.5
V
R
(V) Typ
3
60
20
500
3.5
3.4
215
5.5
60
10
500
4
4.0
170
3.5
60
10
500
5
4.6
150
3.5
60
10
500
6
5.5
120
3.5
60
10
100
7
6.4
110
3.5
60
10
100
8
7.4
108
3
80
10
100
9
8.4
105
3
80
10
100
10
9.4
103
2.5
PZUXB_SER_2
Product data sheet
Rev. 02 — 15 November 2009
5 of 12
嵌入式系统
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