AP4511GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Fast Switching Performance
▼
RoHS Compliant & Halogen-Free
SO-8
S1
D1
D2
D1
D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
G2
S2
G1
35V
25mΩ
7A
-35V
40mΩ
-6.1A
P-CH BV
DSS
R
DS(ON)
I
D
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
N-channel
35
+20
7
5.7
30
2.0
0.016
-55 to 150
-55 to 150
P-channel
-35
+20
-6.1
-5
-30
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
1
201108022
Data and specifications subject to change without notice
AP4511GM-HF
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
35
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
18
29
-
9
-
-
-
11
3
6
12
7
22
6
830
150
110
1.2
Max. Units
-
-
25
37
3
-
1
25
+100
18
-
-
-
-
-
-
1330
-
-
1.8
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=7A
V
GS
=4.5V, I
D
=5A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=7A
V
DS
=35V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=7A
V
DS
=28V
V
GS
=4.5V
V
DS
=18V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=18Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=28V, V
GS
=0V
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=1.7A, V
GS
=0V
I
S
=7A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
18
12
Max. Units
1.2
-
-
V
ns
nC
2
AP4511GM-HF
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Test Conditions
V
GS
=0V, I
D
=-250uA
Reference to 25℃,I
D
=-1mA
V
GS
=-10V, I
D
=-6A
V
GS
=-4.5V, I
D
=-4A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-6A
V
DS
=-35V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=-6A
V
DS
=-28V
V
GS
=-4.5V
V
DS
=-18V
I
D
=-1A
R
G
=3.3Ω,V
GS
=-10V
R
D
=18Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Min.
-35
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.02
32
50
-
9
-
-
-
10
2
6
10
6
26
7
690
165
130
5.2
Max. Units
-
-
40
60
-3
-
-1
-25
+100
16
-
-
-
-
-
-
1100
-
-
7.8
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-28V, V
GS
=0V
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=-1.7A, V
GS
=0V
I
S
=-6A, V
GS
=0V
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
20
12
Max. Units
-1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 135
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4511GM-HF
N-Channel
50
50
T
A
= 25 C
40
o
I
D
, Drain Current (A)
30
I
D
, Drain Current (A)
10V
7.0V
5.0V
T
A
= 150
o
C
40
10V
7.0V
5.0V
30
4.5V
20
20
4.5V
10
V
G
=3.0V
10
V
G
=3.0V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
1.8
I
D
=5A
35
1.6
T
A
=25 C
Normalized R
DS(ON)
1.4
o
I
D
=7A
V
G
=10V
R
DS(ON)
(m
Ω
)
30
1.2
1.0
25
0.8
20
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
6
5
1.3
4
Normalized V
GS(th)
(V)
I
S
(A)
T
j
=150
o
C
3
T
j
=25
o
C
1.1
0.9
2
0.7
1
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4511GM-HF
N-Channel
f=1.0MHz
12
1000
10
I
D
=7A
V
DS
=28V
C
iss
V
GS
, Gate to Source Voltage (V)
8
C (pF)
C
oss
100
6
C
rss
4
2
0
0
5
10
15
20
25
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
10us
1ms
0.1
0.1
I
D
(A)
0.05
1
10ms
100ms
0.1
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135 C/W
o
T
A
=25
o
C
Single Pulse
1s
DC
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
V
DS
=5V
T
j
=25
o
C
I
D
, Drain Current (A)
20
V
G
T
j
=150
o
C
Q
G
4.5V
Q
GS
Q
GD
10
Charge
0
0
2
4
6
8
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
测试/测量
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