VS-25ETS..SPbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 25 A
Base
cathode
2
DESCRIPTION/FEATURES
The VS-25ETS..SPbF rectifier High Voltage Series
has been optimized for very low forward
voltage drop, with moderate leakage. The glass
passivation technology used has reliable
operation up to 150 °C junction temperature.
Typical applications are in input rectification and
these products are designed to be used with
Vishay HPP switches and output rectifiers which
are available in identical package outlines.
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified for industrial level
D
2
PAK
1
Anode
3
Anode
PRODUCT SUMMARY
V
F
at 10 A
I
FSM
V
RRM
<1V
300 A
800 V to 1200 V
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
20
THREE-PHASE BRIDGE
23
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
10 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
25
800 to 1200
300
1.0
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-25ETS08SPbF
VS-25ETS10SPbF
VS-25ETS12SPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
1
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
√t
TEST CONDITIONS
T
C
= 106 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
25
250
300
316
442
4420
A
2
s
A
2
√s
A
UNITS
Document Number: 94342
Revision: 09-Apr-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1
VS-25ETS..SPbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 25 A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
25 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.14
9.62
0.87
0.1
1.0
UNITS
V
mΩ
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
- 40 to 150
0.9
62
0.5
2
0.07
6 (5)
12 (10)
25ETS08S
Marking device
Case style D
2
PAK (SMD-220)
25ETS10S
25ETS12S
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
www.vishay.com
2
For technical questions, contact:
diodestech@vishay.com
Document Number: 94342
Revision: 09-Apr-10
VS-25ETS..SPbF High Voltage Series
Input Rectifier Diode, 25 A
Vishay High Power Products
150
R
thJC
(DC) = 0.9 K/W
60
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
80
0
5
10
15
20
25
30
30°
60°
90°
120°
180°
Ø
Maximum Average Forward
Power Loss (W)
50
40
30
20
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
Ø
10
0
0
10
20
Conduction period
T
J
= 150 °C
30
40
94342_01
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
94342_04
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
R
thJC
(DC) = 0.9 K/W
300
At any rated load condition and with
rated V
RRM
applied following
surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
Maximum Allowable Case
Temperature (°C)
140
Ø
Peak Half
Sine
Wave
Forward Current (A)
130
120
Conduction period
200
DC
110
30°
100
90
0
5
10
15
20
25
30
35
40
60°
90°
120°
180°
100
0
1
94342_05
10
100
94342_02
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
40
300
180°
120°
90°
60°
30°
RMS limit
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum Average Forward
Power Loss (W)
35
30
25
20
15
10
5
Peak Half
Sine
Wave
Forward Current (A)
200
100
Ø
Conduction angle
T
J
= 150 °C
0
0
5
10
15
20
25
30
0
0.01
94342_06
0.1
1
10
94342_03
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94342
Revision: 09-Apr-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
3
VS-25ETS..SPbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 25 A
Instantaneous Forward Current (A)
1000
T
J
= 25 °C
100
T
J
= 150 °C
10
1
0
1
2
3
4
5
94342_07
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
1
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state
value
(DC operation)
0.1
Single
pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.01
0.0001
94342_08
0.001
0.01
0.1
1
10
100
Square
Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
www.vishay.com
4
For technical questions, contact:
diodestech@vishay.com
Document Number: 94342
Revision: 09-Apr-10
VS-25ETS..SPbF High Voltage Series
Input Rectifier Diode, 25 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
25
2
E
3
T
4
S
5
12
6
S
7
TRL PbF
8
9
HPP product suffix
Current rating (25 = 25 A)
Circuit configuration
E = Single diode
Package:
T = TO-220AC
Type of silicon:
S = Standard recovery rectifier
Voltage code x 100 = V
RRM
S = TO-220 D
2
PAK (SMD-220) version
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
08 = 800 V
10 = 1000 V
12 = 1200 V
9
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Document Number: 94342
Revision: 09-Apr-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
5
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