M28F420
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory
5V
±
10% SUPPLY VOLTAGE
12V
±
5% or
±
10% PROGRAMMING
VOLTAGE
FAST ACCESS TIME: 60ns
PROGRAM/ERASE CONTROLLER (P/E.C.)
AUTOMATIC STATIC MODE
MEMORY ERASE in BLOCKS
– Boot Block (Bottom location) with hardware
write and erase protection
– Parameter and Main Blocks
100,000 PROGRAM/ERASE CYCLES
LOW POWER CONSUMPTION
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 00FAh
DESCRIPTION
The M28F420 Flash memory is a non-volatile
memorythat may be erased electricallyat the block
level and programmed by byte or by word.
18
44
1
SO44 (M)
Figure 1. Logic Diagram
VCC
VPP
Signal Names
A0-A16
DQ0-DQ7
DQ8-DQ14
DQ15A–1
E
G
W
BYTE
WP
RP
V
PP
V
CC
V
SS
B28F420/808
Complete data available on
DATA-on-DISC CD-ROM
or at
www.st.com
A0-A17
Address Inputs
Data Input / Outputs
Data Input / Outputs
Data Input/Output or Address Input
Chip Enable
Output Enable
Write Enable
Byte/Word Organization
Write Protect
Reset/Power Down/Boot Block
Unlock
Program & Erase Supply Voltage
Supply Voltage
Ground
DQ15A–1
15
RP
W
E
G
WP
M28F420
DQ0-DQ14
BYTE
VSS
AI01130E
1/2
M28F420
SO Pin Connections
Ordering Information Scheme
For a list of available options or for further informa-
tion on any aspect of this device, please contact
the STMicroelectronics Sales Office nearestto you.
RP
W
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
VPP
WP
A17
A7
A6
A5
A4
A3
A2
A1
A0
E
VSS
G
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
44
2
43
3
42
4
41
5
40
6
39
7
38
8
37
9
36
10
35
11
34
M28F420
12
33
13
32
14
31
15
30
16
29
17
28
27
18
19
26
20
25
24
21
22
23
AI01133D
Example:
M28F420 -80
X
N
1
TR
Operating Voltage
F
5V
Array Matrix
2
Bottom Boot
Speed
-60 60ns
-70 70ns
-80 80ns
-90 90ns
-120 120ns
Power Supplies
blank V
CC
±
10%
V
PP
±
5%
X
Y
V
CC
±
5%
V
PP
±
5%
V
CC
±
10%
V
PP
±
10%
Package
M
SO44
Temp. Range
1
6
3
0 to 70
°C
–40 to 85
°
C
–40 to 125
°C
Option
TR Tape & Reel
Packing
Note:
Devices are shipped from the factory with the memory
content erased (to FFh).
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