VISHAY
IMBD4148
Vishay Semiconductors
Small Signal Switching Diode
Features
• Silicon Epitaxial Planar Diodes
• Fast switching diode in case SOT-23, especially
suited for automatic insertion.
• This diodes are also available in other case styles
including: the DO-35 case with the type designa-
tion 1N4148, the Mini-MELF case with the type
designation LL4148, and the SOD-123 case with
the type designation 1N4148W.
3
1
2
16923
Mechanical Data
Case:
SOT-23 Plastic case
Weight:
approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
IMBD4148
Ordering code
IMBD4148-GS18 or IMBD4148-GS08
A2
Marking
Remarks
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Peak reverse voltage
Rectified current (average) half
wave rectification with resist.
Surge forward current
Power dissipation
1)
Test condition
Symbol
V
R
V
RM
Value
75
100
150
1)
500
350
1)
Unit
V
V
mA
mA
mW
T
amb
= 25 °C,
≥
f
≥
50 Hz
t < 1 s, T
j
= 25 °C
up to T
amb
= 25 °C
I
F(AV)
I
FSM
P
tot
Device on fiberglass substrate, see layout (SOT-23).
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
S
Value
450
1)
150
- 65 to + 150
Unit
°C/W
°C
°C
Device on fiberglass substrate, see layout (SOT-23).
Document Number 85731
Rev. 1.4, 08-Jul-04
www.vishay.com
1
IMBD4148
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Leakage current
Test condition
I
F
= 10 mA
V
R
= 70 V
V
R
= 70 V, T
j
= 150 °C
V
R
= 25 V, T
j
= 150 °C
Diode capacitance
Reverse recovery time
(see figures)
V
F
= V
R
= 0
I
F
= 10 mA, I
R
= 10 mA,
V
R
= 6 V, R
L
= 100
Ω
Symbol
V
F
I
R
I
R
I
R
C
tot
t
rr
Min
Typ.
Max
1.0
2.5
50
30
4
4
VISHAY
Unit
V
µA
µA
µA
pF
ns
Layout for R
thJA
test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
12 (0.47)
15 (0.59)
0.8 (0.03)
2 (0.8)
1 (0.4)
2 (0.8)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
r
f
- Dynamic Forward Resistance (
Ω
)
1000
I
F
- Forward Current ( mA )
10000
T
j
= 25
°
C
f = 1 kHz
1000
100
10
T
j
= 100
°
C
25
°
C
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
100
10
1
0.01
18661
V
F
- Forward Voltage ( V )
18662
0.1
1
10
I
F
- Forward Current ( mA )
100
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Dynamic Forward Resistance vs. Forward Current
www.vishay.com
2
Document Number 85731
Rev. 1.4, 08-Jul-04
VISHAY
IMBD4148
Vishay Semiconductors
P
tot
- Admissible Power Dissipation ( mW )
500
400
300
200
100
0
10000
I
R
- Leakage Current ( nA )
1000
100
10
V
R
= 20 V
1
0 20 40 60 80 100 120 140 160 180 200
T
j
- Junction Temperature (
°
C )
0
20 40 60 80 100 120 140 160180 200
T
amb
- Ambient Temperature (
°C
)
18665
18663
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Leakage Current vs. Junction Temperature
C
tot
- Relative Capacitance ( pF )
1.1
1.0
0.9
0.8
0.7
0
2
4
T
j
= 25
°
C
f = 1 MHz
6
8
10
18664
V
R
- Reverse Voltage ( V )
Figure 4. Relative Capacitance vs. Reverse Voltage
100
I
I
FRM
- Admissible Repetitive
Peak Forward Current ( A )
½
= t
p
/T
t
p
I
FRM
T
T = 1/f
p
10
½
= 0
0.1
0.2
t
1
0.5
18666
0.1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
t
p
- Pulse Length ( s )
Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration
Document Number 85731
Rev. 1.4, 08-Jul-04
www.vishay.com
3
IMBD4148
Vishay Semiconductors
Package Dimensions in mm (Inches)
VISHAY
1.15 (.045)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
0.4 (.016)
0.4 (.016)
2.6 (.102)
2.35 (.092)
0.95 (.037)
ISO Method E
3.1 (.122)
2.8 (.110)
0.4 (.016)
3
1.43 (.056)
1.20(.047)
Mounting Pad Layout
0.52 (0.020)
0.9 (0.035)
2.0 (0.079)
1
0.95 (.037)
2
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
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4
Document Number 85731
Rev. 1.4, 08-Jul-04
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
IMBD4148
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85731
Rev. 1.4, 08-Jul-04
www.vishay.com
5
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