1N5711UR-1, 1N5712UR-1, 1N6857UR-1,
and 1N6858UR-1 plus CDLL equivalents
Available on
commercial
versions
Schottky Barrier Diode
MELF Surface Mount
Qualified per MIL-PRF-19500/444
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
This Schottky barrier diode is metallurgically bonded and offers military grade qualifications
for high-reliability applications. This small diode is hermetically sealed and bonded into a
DO-213AA glass package. Also included in this datasheet are Microsemi’s CDLL numbered
variants of this series (military qualification grades not are not available for the CDLL prefix
part numbers).
Important:
For the latest information, visit our website
http://www.microsemi.com.
DO-213AA (MELF)
Package
Also available in:
UB package
(3-pin surface mount)
1N5711UB, 1N5712UB
(B, CC, CA)
FEATURES
•
•
•
•
•
Surface mount equivalent of JEDEC registered 1N5711, 1N5712, 1N6857, and 1N6858 numbers.
Hermetically sealed glass construction.
Metallurgically bonded.
Double plug construction.
JAN, JANTX, JANTXV and commercial qualifications also available per MIL-PRF-19500/444 on
“1N” numbers only.
(See
Part Nomenclature
for all available options).
•
RoHS compliant versions available (commercial grade only).
DO-35 package
(axial-leaded)
1N5711-1, 1N5712-1,
1N6857-1, and 1N6858-1
APPLICATIONS / BENEFITS
•
•
•
Low reverse leakage characteristics.
Small size for high density mounting using the surface mount method (see package illustration).
ESD sensitive to Class 1.
MAXIMUM RATINGS
@ 25 ºC unless otherwise stated
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction-to-End Cap
Average Rectified Output Current:
(1)
5711 & 6263 types
(2)
2810, 5712 & 6858 types
(3)
6857 types
Solder Temperature @ 10 s
NOTES:
1. At T
EC
and T
SP
= +140 °C, derate I
O
to 0 at +150 °C.
2. At T
EC
and T
SP
= +130 °C, derate I
O
to 0 at +150 °C.
3. At T
EC
and T
SP
= +110°C, derate I
O
to 0 at +150 °C.
Symbol
T
J
and T
STG
R
ӨJEC
I
O
Value
-65 to +150
250
33
75
150
260
Unit
ºC
ºC/W
mA
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
C
T4-LDS-0040-1, Rev. 1 (6/4/13)
©2013 Microsemi Corporation
Page 1 of 7
1N5711UR-1, 1N5712UR-1, 1N6857UR-1,
and 1N6858UR-1 plus CDLL equivalents
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
•
CASE: Hermetically sealed glass DO-213AA MELF (SOD-80, LL34) case package.
TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per
MIL-STD-750, method 2026.
POLARITY: Cathode end is banded.
MOUNTING: The axial coefficient of expansion (COE) of this device is approximately +6PPM/°C. The COE of the mounting
surface system should be selected to provide a suitable match with this device.
MARKING: Part number.
TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
WEIGHT: Approximately 0.2 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
Blank = Commercial grade
JEDEC type number
(see
Electrical Characteristics
table)
1N5711
UR -1 (e3)
RoHS Compliance
e3 = RoHS compliant (on
commercial grade only)
Blank = non-RoHS compliant
Metallurgically Bonded
MELF Surface Mount
CDLL
Microsemi Designation
Series number
(see
Electrical Characteristics
table)
2810
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
Symbol
C
f
I
R
I
O
t
rr
V
(BR)
V
F
V
R
V
RWM
SYMBOLS & DEFINITIONS
Definition
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
frequency
Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage V
R
.
Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
Breakdown Voltage: A voltage in the breakdown region.
Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a specified forward current.
Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region.
Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes
known historically as PIV.
T4-LDS-0040-1, Rev. 1 (6/4/13)
©2013 Microsemi Corporation
Page 2 of 7
1N5711UR-1, 1N5712UR-1, 1N6857UR-1,
and 1N6858UR-1 plus CDLL equivalents
ELECTRICAL CHARACTERISTICS
@ T
A
= 25 ºC unless otherwise noted
MINIMUM
BREAKDOWN
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
V (pk)
50
16
16
50
50
50
16
16
16
50
MAXIMUM
REVERSE
LEAKAGE
CURRENT
I
R
@ V
R
nA
Volts
200
50
150
16
150
16
200
50
100
15
200
50
150
16
200
50
150
16
200
50
MAXIMUM
CAPACITANCE
@ V
R
= 0
VOLTS
f = 1.0 MHz
C
T
pF
2.0
2.0
4.5
4.5
2.0
2.0
2.0
2.2
4.5
4.5
TYPE
NUMBER
1N5711UR-1
1N5712UR-1
1N6857UR-1
1N6858UR-1
CDLL2810
CDLL5711
CDLL5712
CDLL6263
CDLL6857
CDLL6858
V
(BR)
@ 10 µA
Volts
70
20
20
70
20
70
20
60
20
70
V
F
@ 1 mA
Volts
0.41
0.41
0.35
0.36
0.41
0.41
0.41
0.41
0.35
0.36
V
F
@ I
F
V @ mA
1.0 @ 15
1.0 @ 35
0.75 @ 35
0.65 @ 15
1.0 @ 35
1.0 @ 15
1.0 @ 35
1.0 @ 15
0.75 @ 35
0.65 @ 15
NOTE:
1. Effective minority carrier lifetime (τ) is 100 pico seconds.
T4-LDS-0040-1, Rev. 1 (6/4/13)
©2013 Microsemi Corporation
Page 3 of 7
1N5711UR-1, 1N5712UR-1, 1N6857UR-1,
and 1N6858UR-1 plus CDLL equivalents
GRAPHS
I
F
– Forward Current (mA)
V
F
– Forward Voltage (V)
FIGURE 1
I-V Curve showing typical Forward Voltage Variation
Temperature for the 1N5712UR-1, CDLL5712 and CDLL2810 Schottky Diodes
I
R
– Reverse Current (nA)
V
R
– Reverse Voltage (V) (PULSED)
FIGURE 2
1N5712UR-1, CDLL5712 and CDLL2810 Typical variation of Reverse
Current (I
R
) vs Reverse Voltage (V
R
) at Various Temperatures
T4-LDS-0040-1, Rev. 1 (6/4/13)
©2013 Microsemi Corporation
Page 4 of 7
1N5711UR-1, 1N5712UR-1, 1N6857UR-1,
and 1N6858UR-1 plus CDLL equivalents
GRAPHS
I
F
– Forward Current (mA)
V
F
– Forward Voltage (V)
FIGURE 3
I – V curve showing typical Forward Voltage Variation
With Temperature Schottky Diode 1N5711UR-1
I
R
– Reverse Current (nA)
V
R
– Reverse Voltage (V) (PULSED)
FIGURE 4
1N5711UR-1 Typical Variation of Reverse Current (I
R
) vs Reverse Voltage (V
R
)
at Various Temperatures
T4-LDS-0040-1, Rev. 1 (6/4/13)
©2013 Microsemi Corporation
Page 5 of 7
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
