DG411/412/413
Vishay Siliconix
Precision Monolithic Quad SPST CMOS Analog Switches
FEATURES
D
D
D
D
D
D
D
44-V Supply Max Rating
"15-V
Analog Signal Range
On-Resistance—r
DS(on)
: 25
W
Fast Switching—t
ON
: 110 ns
Ultra Low Power—P
D
: 0.35
mW
TTL, CMOS Compatible
Single Supply Capability
BENEFITS
D
D
D
D
Widest Dynamic Range
Low Signal Errors and Distortion
Break-Before-Make Switching Action
Simple Interfacing
APPLICATIONS
D
D
D
D
D
Precision Automatic Test Equipment
Precision Data Acquisition
Communication Systems
Battery Powered Systems
Computer Peripherals
DESCRIPTION
The DG411 series of monolithic quad analog switches was
designed to provide high speed, low error switching of
precision analog signals. Combining low power (0.35
mW)
with
high speed (t
ON
: 110 ns), the DG411 family is ideally suited for
portable and battery powered industrial and military
applications.
To achieve high-voltage ratings and superior switching
performance, the DG411 series was built on Vishay Siliconix’s
high voltage silicon gate process. An epitaxial layer prevents
latchup.
Each switch conducts equally well in both directions when on,
and blocks input voltages up to the supply levels when off.
The DG411 and DG412 respond to opposite control logic as
shown in the Truth Table. The DG413 has two normally open
and two normally closed switches.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411
Dual-In-Line and SOIC
IN
1
D
1
S
1
V–
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
V
L
S
3
D
3
IN
3
S
1
V–
NC
GND
S
4
4
5
6
7
8
9
10
DG411
LCC
D
1
IN
1
NC IN
2
D
2
Key
3
2
1
20
19
18
17
16
15
14
11
12
13
S
2
V+
NC
V
L
S
3
TRUTH TABLE
Logic
0
1
DG411
ON
OFF
Logic “0”
v
0.8 V
Logic “1”
w
2.4 V
24
DG412
OFF
ON
D
4
IN
4
NC IN
3
D
3
Top View
Document Number: 70050
S-52433—Rev. D, 06-Sep-99
www.vishay.com
S
FaxBack 408-970-5600
4-1
DG411/412/413
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG413
Dual-In-Line and SOIC
Key
4
5
6
7
8
D
1
3
S
1
V–
NC
GND
S
4
D
4
IN
4
5
6
7
8
Top View
12
11
10
9
V
L
S
3
D
3
IN
3
GND
S
4
DG413
LCC
IN
1
NC IN
2
2
1
20
D
2
19
18
17
16
15
14
S
2
V+
NC
V
L
S
3
IN
2
D
2
S
2
V+
IN
1
D
1
S
1
V–
1
2
3
4
16
15
14
13
TRUTH TABLE
Logic
0
1
SW
1
, SW
4
OFF
ON
SW
2
, SW
3
ON
OFF
Logic “0”
v
0.8 V
Logic “1”
w
2.4 V
24
9
D
4
10
11
12
13
D
3
IN
4
NC IN
3
Top View
ORDERING INFORMATION
Temp Range
Package
Part Number
DG411/412
–40 to 85_C
16-Pin Plastic DIP
DG411DJ
DG412DJ
DG411DY
DG412DY
DG411AK, DG411AK/883, 5962-9073101MEA
DG412AK, DG412AK/883, 5962-9073102MEA
DG411AZ/883, 5962-9073101M2A
5962-9073102M2A
–40 to 85 C
40 85_C
16-Pin Narrow SOIC
16-Pin CerDIP
–55 to 125 C
55 125_C
LCC-20
DG413
–40 to 85_C
16-Pin Plastic DIP
16-Pin Narrow SOIC
16-Pin CerDIP
LCC-20
DG413DJ
DG413DY
DG413AK, DG413AK/883, 5962-9073103MEA
5962-9073103M2A
–55 to 125_C
ABSOLUTE MAXIMUM RATINGS
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
V
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND –0.3 V) to (V+) +0.3 V
Digital Inputs
a
, V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle) . . . . . . . . . . . . 100 mA
Storage Temperature
(AK, AZ Suffix) . . . . . . . . . . . . . . –65 to 150_C
(DJ, DY Suffix) . . . . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)
b
16-Pin Plastic DIP
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin Narrow SOIC
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin CerDIP
e
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
LCC-20
e
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
470 mW
600 mW
900 mW
900 mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 25_C
d. Derate 7.6 mW/_C above 75_C
e. Derate 12 mW/_C above 75_C
Document Number: 70050
S-52433—Rev. D, 06-Sep-99
www.vishay.com
S
FaxBack 408-970-5600
4-2
DG411/412/413
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Switch Off
Leakage Current
L k
C
t
Channel On
Leakage Current
V
ANALOG
r
DS(on)
I
S(off)
I
D(off)
I
D(on)
V+ = 13.5 V, V– = –13.5 V
I
S
= –10 mA, V
D
=
"8.5
V
,
V+ = 16.5, V– = –16.5 V
V
D
=
"15.5
V V
S
=
#15.5
V
15 5 V,
15 5
V+ = 16.5 V, V– = –16.5 V
V
S
= V
D
=
"15.5
V
Full
Room
Full
Room
Full
Room
Full
Room
Full
25
"0.1
"0.1
"0.1
–0.25
–20
–0.25
–20
–0.4
–40
–15
15
35
45
0.25
20
0.25
20
0.4
40
–0.25
–5
–0.25
–5
–0.4
–10
–15
15
35
45
0.25
5
0.25
5
0.4
10
nA
A
V
W
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Symbol
V+ = 15 V, V– = –15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Digital Control
Input Current, V
IN
Low
Input Current, V
IN
High
I
IL
I
IH
V
IN
Under Test = 0.8 V
V
IN
Under Test = 2.4 V
Full
Full
0.005
0.005
–0.5
–0.5
0.5
0.5
–0.5
–0.5
0.5
0.5
mA
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolation
e
Channel-to-Channel Cross-
talk
e
Source Off Capacitance
e
Drain Off Capacitance
e
Channel On Capacitance
e
t
ON
t
OFF
t
D
Q
OIRR
X
TALK
C
S(off)
C
D(off)
C
D(on)
f = 1 MHz
MH
R
L
= 300
W
, C
L
= 35 p
pF
V
S
=
"10
V See Figure 2
10 S Fi
DG413 Only, V
S
= 10 V
R
L
= 300
W
, C
L
= 35 pF
V
g
= 0 V, R
g
= 0
W
, C
L
= 10 nF
R
L
= 50
W,
C
L
= 5 pF,
W
,
f = 1 MHz
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Room
110
100
175
240
145
160
175
220
145
160
ns
25
5
68
dB
85
9
9
35
pF
F
pC
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
I+
I–
I
L
I
GND
V = 16.5, V = –16.5 V
16 5
V+ 16 5, V–
V
IN
= 0 or 5 V
Room
Full
Room
Full
Room
Full
Room
Full
0.0001
–0.0001
0.0001
–0.0001
–1
–5
–1
–5
1
5
–1
–5
1
5
–1
–5
1
5
1
5
A
mA
Document Number: 70050
S-52433—Rev. D, 06-Sep-99
www.vishay.com
S
FaxBack 408-970-5600
4-3
DG411/412/413
Vishay Siliconix
SPECIFICATIONS
a
FOR UNIPOLAR SUPPLIES
Test Conditions
Unless Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
V
ANALOG
r
DS(on)
V+ = 10.8 V, I
S
= –10 mA
V
D
= 3 V, 8 V
Full
Room
Full
40
12
80
100
12
80
100
V
W
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Symbol
V+ = 12 V, V– = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
t
ON
t
OFF
t
D
Q
R
L
= 300
W
, C
L
= 35 p
pF
V
S
= 8 V, See Figure 2
V S Fi
DG413 Only, V
S
= 8 V,
R
L
= 300
W
, C
L
= 35 pF
V
g
= 6 V, R
g
= 0
W
, C
L
= 10 nF
Room
Hot
Room
Hot
Room
Room
175
95
250
400
125
140
250
315
125
140
ns
25
25
pC
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
I+
I–
V+ 13 5
V = 13.5, V
IN
= 0 or 5 V
I
L
I
GND
Room
Hot
Room
Hot
Room
Hot
Room
Hot
0.0001
–0.0001
0.0001
–0.0001
–1
–5
–1
–5
1
5
–1
–5
1
5
–1
–5
1
5
1
5
mA
A
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. V
D
and Power Supply Voltage
50
r DS(on) Drain-Source On-Resistance (
W
)
–
45
40
35
30
25
20
15
10
5
0
–20
–15
–10
–5
0
5
10
15
20
V
D
– Drain Voltage (V)
0
0
2
4
6
8
10
12
14
16
18
20
"20
V
50
"15
V
"8
V
"10
V
"12
V
V DS(on) (
W
)
T
A
= 25_C
"5
V
250
V+ = 3 V
V
L
= 3 V
On-Resistance vs. V
D
and Unipolar Supply Voltage
300
V
L
= 5 V
200
150
V+ = 5 V
100
8V
12 V
15 V
20 V
V
D
– Drain Voltage (V)
www.vishay.com
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FaxBack 408-970-5600
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Document Number: 70050
S-52433—Rev. D, 06-Sep-99
DG411/412/413
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Leakage Current vs. Analog Voltage
40
V+ = 15 V
V– = –15 V
V
L
= 5 V
T
A
= 25_C
r DS(on) Drain-Source On-Resistance (
W
)
–
30
20
10
I S, I D (pA)
0
–10
–20
–30
–40
–50
–60
–15
–10
–5
0
5
10
15
V
D
or V
S
— Drain or Source Voltage (V)
I
S(off)
I
D(on)
35
V+ = 15 V
V– = –15 V
V
L
= 5 V
125_C
25
85_C
20
25_C
15
–55_C
10
I
D,
I
S
Leakages vs. Temperature
30
I
D(off)
5
–15
–10
–5
0
5
10
15
V
D
– Drain Voltage (V)
Charge Injection vs. Analog Voltage
100
80
60
80
40
Q (pC)
Q (pC)
C
L
= 10 nF
20
0
C
L
= 1 nF
–20
–20
–40
–60
–15
–10
–5
0
5
10
15
V
S
– Source Voltage (V)
–40
–60
–15
60
V+ = 15 V
V– = –15 V
V
L
= 5 V
140
120
100
Charge Injection vs. Analog Voltage
V+ = 15 V
V– = –15 V
V
L
= 5 V
C
L
= 10 nF
C
L
= 1 nF
40
20
0
–10
–5
0
5
10
15
V
D
– Drain Voltage (V)
Input Switching Threshold vs. Supply Voltage
3.5
3.0
2.5
V TH (V)
2.0
6.5 V
1.5
1.0
0.5
0
(V+) 5
10
15
20
25
30
35
40
4.5 V
5.5 V
240
210
180
t ON t OFF (ns)
,
V
L
= 7.5 V
150
Switching Time vs. Temperature
V+ = 15 V
V– = –15 V
V
L
= 5 V
V
S
= 10 V
t
ON
120
t
OFF
90
60
30
0
–55 –35
–15
5
25
45
65
85
105 125
Temperature (_C)
Document Number: 70050
S-52433—Rev. D, 06-Sep-99
www.vishay.com
S
FaxBack 408-970-5600
4-5
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