1MBK30D-060S
600V / 30A Molded Package
Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
Molded IGBT
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector
DC
Tc=25°C
current
Tc=100°C
1ms
Tc=25°C
Max. power dissipation (IGBT)
Max. power dissipation (FWD)
Operating temperature
Storage temperature
Screw torque
Symbol
V
CES
V
GES
I
C25
I
C100
Icp
P
C
P
C
T
j
T
stg
-
Rating
600
±20
50
30
90
150
80
+150
-40 to +150
39.2 to 58.8
Unit
V
V
A
A
A
W
W
°C
°C
N·cm
Equivalent Circuit Schematic
IGBT + FWD
C:Collector
G:Gate
E:Emitter
Electrical characteristics (at Tc=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
on
*
t
r
*
t
rr2
Turn-off time
Switching
Time
Turn-on time
t
off
t
f
t
on
*
t
r
*
t
rr2
t
off
t
f
V
F
t
rr
Characteristics
Min.
Typ.
–
–
4.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5.0
2.4
1960
222
101
0.15
0.09
0.03
0.50
0.10
0.15
0.09
0.03
0.50
0.10
2.0
0.06
Conditions
Max.
1.0
10
6.0
2.9
–
–
–
–
–
–
0.62
0.17
–
–
–
0.62
0.17
2.5
0.10
V
GE
=0V, V
CE
=600V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=30mA
V
GE
=15V, I
C
=30A
V
GE
=0V
V
CE
=25V
f=1MHz
V
CC
=300V, I
C
=30A
V
GE
=±15V
R
G
=36 ohm
(Half Bridge)
Inductance Load
V
CC
=300V, I
C
=30A
V
GE
=+15V
R
G
=10 ohm
(Half Bridge)
Inductance Load
I
F
=30A, V
GE
=0V
I
F
=30A, V
GE
=-10V,
V
R
=300V, di/dt=100A/µs
V
µs
µs
mA
µA
V
V
pF
Unit
µs
Turn-off time
FWD forward on voltage
Reverse recovery time
*
Turn-on characteristics include trr2. See a figure in next page.
Thermal resistance characteristics
Item
Thermal resistance
Symbol
Rth(j-c)
Rth(j-c)
Characteristics
Min.
Typ.
–
–
–
–
Conditions
Max.
0.83
1.56
IGBT
FWD
°C/W
°C/W
Unit
1MBK30D-060S
Outline drawings, mm
TO-247
Molded IGBT
Gate
Collector
Emitter
Switching waveform (Inductance load)
Mesurement circuit
1MBK30D-060S
Characteristics
Collector current vs. Collector-Emitter voltage
Tj=25°C
Molded IGBT
Collector current vs. Collector-Emitter voltage
Tj=125°C
Collector Current : I
C
(A)
Collector Current : I
C
(A)
Collector-Emitter Voltage : V
CE
(V)
Collector-Emitter Voltage : V
CE
(V)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=25°C
Collector-Emitter Voltage : V
CE
(V)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=125°C
Collector-Emitter Voltage : V
CE
(V)
Gate-Emitter Voltage : V
GE
(V)
Gate-Emitter Voltage : V
GE
(V)
Switching time vs. Collector current
V
CC
=300V, R
G
=10Ω, V
GE
=+15V, Tj=125°C
Switching time vs. Collector current
V
CC
=300V, R
G
=36Ω, V
GE
=±15V, Tj=125°C
: tf,toff, tr, ton, trr2 (nsec)
Switching time
Collector current : I
C
(A)
Switching time
: tf,toff, tr, ton, trr2 (nsec)
Collector current : I
C
(A)
1MBK30D-060S
Characteristics
Switching time vs. R
G
V
CC
=300V, I
C
=30A, V
GE
=+15V, Tj=125°C
Switching time vs. R
G
IGBT Module
V
CC
=300V, I
C
=30A, V
GE
=±15V, Tj=125°C
Switching time
Gate resistance : R
G
(Ω)
Switching time
: tf,toff, tr, ton, trr2 (nsec)
: tf,toff, tr, ton, trr2 (nsec)
Gate resistance : R
G
(Ω)
Dynamic input characteristics
Tj=25°C
Capacitance : Cies, Coes, Cres (nF)
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Collector-Emitter voltage : V
CE
(V)
Gate-Emitter voltage : V
GE
(V)
Collector-Emitter Voltage : V
CE
(V)
Gate charge : Qg (nc)
Reverse Biased Safe Operating Area
R
G=
10Ω, +V
GE
< 20V, -V
GE
=15V, Tj < 125°C
=
=
Forward Bias Safe Operating Area
Collector current : I
C
(A)
Collector current : I
C
(A)
Collector-Emitter voltage : V
CE
(V)
Collector-Emitter voltage : V
CE
(V)
1MBK30D-060S
Characteristics
Reverse recovery time vs. Forward Ccrrent
V
R
=300V, -di/dt=100A/µsec
IGBT Module
Reverse recovery current vs. Forward current
V
R
=300V, -di/dt=100A/µsec
Reverse recovery time : trr [nsec]
Forward current : I
F
(A)
Reverse recovery current : Irr [A]
Forward current : I
F
(A)
Reverse recovery chracteristics vs. -di/dt
Forward Voltage vs. Forward current
V
R
=300V, I
F
=30A, Tj=125°C
Reverse recovery current : Irr [A]
Reverse recovery time : trr [nsec]
Forward Current : I
F
[A]
Forward Voltage : V
F
(V)
-di/dt [A/
µ
sec]
Transient thermal resistance
Thermal resistance : Rth(j-c) [°C/W]
Pulse width : P
W
(sec)
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