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FMS2014-001SQ

产品描述Diversity Switch, 2500MHz Max, 1 Func, 0.55dB Insertion Loss-Max, GAAS,
产品类别无线/射频/通信    射频和微波   
文件大小618KB,共5页
制造商Qorvo
官网地址https://www.qorvo.com
标准
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FMS2014-001SQ概述

Diversity Switch, 2500MHz Max, 1 Func, 0.55dB Insertion Loss-Max, GAAS,

FMS2014-001SQ规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Qorvo
Reach Compliance Codeunknown
ECCN代码5A991.G
Is SamacsysN
最大插入损耗0.55 dB
最小隔离度26 dB
JESD-609代码e3
安装特点SURFACE MOUNT
功能数量1
端子数量12
最大工作频率2500 MHz
最高工作温度100 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装等效代码LCC12,.12SQ,20
射频/微波设备类型DIVERSITY SWITCH
表面贴装YES
技术GAAS
端子面层Matte Tin (Sn) - annealed
Base Number Matches1

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FMS2014-001
High Power
GaAs SPDT
Switch
FMS2014-001
HIGH POWER GaAs SPDT SWITCH
Package: 3 mm x 3 mm QFN
Product Description
The FMS2014-001 is a low loss, high power, linear single-pole double-throw Gallium
Arsenide antenna switch designed for use in mobile handset applications. The die
is fabricated using the RFMD FL05 0.5
Pm
switch process technology, which offers
excellent performance optimised for switch applications. The FMS2014-001 is
designed for use in dual-, tri-, and quad-band GSM handset antenna switch mod-
ules and RF front end modules. It can also find use in other applications where high
power and linear RF switching is necessary.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Features
„
„
„
„
D
ew
Fo
rN
Specification
Typ.
Unit
Min.
Max.
9
Parameter
Electrical Specifications
Insertion Loss
Return Loss
Isolation
es
i
„
„
„
„
Excellent Low Control Voltage
Performance
Excellent Harmonic Perfor-
mance Under
GSM/DCS/PCS/EDGE Power
Levels
Very High Tx-Rx Isolation:
> 28 dB typ. at 1.8 GHz
Very Low Insertion Loss:
0.5 dB at 1.8 GHz
Very Low Control Current
ot
2nd Harmonic Level
3rd Harmonic Level
Switching Speed: T
RISE
, T
FALL
Switching Speed: T
ON
, T
OFF
Control Current
16
-30
-26
-60
-65
-60
-65
0.45
0.5
20
-32
-30
-70
-75
-70
-75
< 0.3
< 0.3
5
0.5
0.55
1.0
1.0
10
0.2
5
dB
dB
dB
dB
dB
dBc
dBc
dBc
dBc
Ps
Ps
PA
V
V
:
:
General Test Conditions
Bias Voltages (Low)
Bias Voltages (High)
Port Impedances
Off Arm Termination
0
2.5
50
50
DS130506
N
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
gn
Applications
Mobile Handset Applications
Dual-, Tri-, and Quad-band
GSM Handset Antenna
Switch Modules
RF Front End Modules
Condition
T
AMBIENT
= 25 °C, V
CTRL
= 0 V/2.5 V, Z
IN
= Z
OUT
= 50
:
External DC-blocking capacitors are required on all
RF ports (typ. 700 [F)
0.5 GHz to 1.0 GHz
1.0 GHz to 2.0 GHz
0.5 GHz to 2.5 GHz
0.5 GHz to 1.0 GHz
1.0 GHz to 2.0 GHz
1 GHz, P
IN
= +35 dBm, 100% duty cycle
2 GHz, P
IN
= +33 dBm, 100% duty cycle
1 GHz, P
IN
= +35 dBm, 100% duty cycle
2 GHz, P
IN
= +33 dBm, 100% duty cycle
10 % to 90 % RF and 90 % to 10 % RF
50 % control to 90 % RF and 50 % control to 10 %
RF
+35 dBm RF input at 1 GHz
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