Jloaacti, Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
12F(R) SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
High surge current capability
Avalanche types available
Stud cathode and stud anode version
Wide current range
Types up to 1200VV
RRM
12A
TypicalApplications
Battery charges
Converters
Power supplies
Machine tool controls
Major Ratings and Characteristics
Parameters
F(AV)
12F(R)
12
@T
C
144
Units
A
°C
A
A
A
A
2
S
A
2
s
V
"C
f (RMS)
FSM
19
@50Hz
@60Hz
265
280
351
320
•I
2
t
@50Hz
@ 60Hz
V
RRM
range
range
10010
1200
- 6 5 to 175
L
Quality Semi-Conductors
12F(R) Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
RRU
, maximum
repetitive peak
reverse voltage
V
V_... maximum non-
RSM
repetitive peak
reverse voltage
V
V
minimum
avalanche
voltage
V
l
RRM
max
@ T = 175'C
(1)
rnA
10
20
100
200
400
600
800
1000
1200
150
275
500
725
950
1200
1400
12F(R)
40
60
80
100
120
500
750
950
1150
1350
12
(1) Avalanche version only available from V
RRM
400V to 1200V
Forward Conduction
Parameter
I
(
.
AV
I
L
.
RM
,.
12F(R)
12
144
19
7
265
280
Units Conditions
A
Max average forward current
@ Case temperature
Max. RMS forward current
Maximum non-repetitive
peak reverse power
Max. peak, one-cycle forward,
non-repetitive surge current
180° conduction, haft sine wave
°c
A
K/W
P
R
I
FSM
10us square pulse, T
;
= T
:
max.
see note (2)
1 = 10ms
No voltage
reapplied
100%v
™
t = 8.3ms
A
225
235
t = 10ms
t = 8.3ms
t = 10ms
reapplied
No voltage
reapplied
100%V
RRH
reapplied
Sinusoidal half wave,
Initial T, - T! max.
l-t
Maximum R for fusing
351
320
A
3
s
250
226
t = 8.3ms
t = 10ms
t = 8.3ms
A^s
l-\
V
FlTf
Maximum IM for fusing
Low level value of threshold
voltage
3510
t = 0. 1 to 10ms. no voltage reapplied
(16 7% x n x l
i i A V |
<;| •; ,r x I
F|AV|
). Tj = T j max.
0 77
V
0.97
V
f
, ,
0|
, High level value of threshold
voltage
r
i,
2
V
FM
Low level value of forward
slope resistance
High level value of forward
slope resistance
Max. forward voltage drop
6.20
(
! >
"
x I F
,«V,)- T j - ^ m a x .
(16.7% x it x l
p
mU
ftvi
10.70
* I ', IT x l
r
.
AV|
). Tj = T, max
(I > itx I
I | A V |
), T, = T, max
V
1 26
I = 38A. T, = 25°C. t = 400ps rectangular wave
(2) Available only for Avalanche version, all other parameters the same as 12F
12F(R)
Series
Thermal and Mechanical Specifications
Parameter
T
T
R
h
,
R
]hrs
T
Max junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case
to heatsink
Mounting torque, ± 10%
12F(R)
- 6 5 t o 175
-6510200
2
0.5
1.2
(1.5)
K/W
Nm
°C
Units
Conditions
DC operation
Mounting surface, smooth, flat and
greased
Lubricated threads
(Not lubricated threads)
9
(oz)
wt
Approximate weight
Case style
7 (0 25)
DO-203AA (DO-4)
See Outline Table
AR
thJC
Conduction
(The following table shows the increment of thermal re&stence R
fl|jr
, when devices operate at different conduction angles than DC)
Conduction angle
180°
120'
Sinusoidal conduction
0 33
Rectangular conduction
Units
0.26
0 44
0.58
0.81
1.29
K/W
Conditions
T
(
- T
max.
0.41
053
078
90'
60"
30"
1.28
Ordering Information Table
Device Code
A
= Avalanche diode
None = Standard diode
D
D
Current rating: Code = I
FAv)
F
= Standard device
None = Stud Normal Polarity (Cathode to Stud)
R
= Stud Reverse Polarity (Anode to Stud)
Voltage code: Code x 10 = V
RRM
(See Voltage Ratings table)
None = Stud base DO-203AA (DO-4) 10-32UNF-2A
M
= Stud base DO-203AA (DO-4) M5 X 0.8 - (Not available for Avalanche diodes)
12F(R) Series
Outlines Table
3.3 (0.13) / 4 (0.1 i>)
(0.03) ' (0,004)
(0.07) • (0.01)
i 6.8 (0.27)
10/32"UNF-2A
for metric devices; M5 X 0,8
Case Style DO-203AA (DO-4)
All dimensions in millimeters (inches)
嵌入式系统
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